IRLML6302PbF-1
V
DS
R
DS(on) max
(@V
GS
= -4.5V)
-20
0.60
2.4
-0.78
V
Ω
nC
A
S
2
G 1
HEXFET
®
Power MOSFET
Q
g (typical)
I
D
(@T
A
= 25°C)
3 D
Micro3
TM
Features
Industry-standard pinout SOT-23 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
⇒
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number
IRLML6302TRPbF-1
Package Type
Micro3
™
(SOT-23)
Standard Pack
Form
Quantity
Tape and Reel
3000
Orderable Part Number
IRLML6302TRPbF-1
Absolute Maximum Ratings
Parameter
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
V
GS
dv/dt
T
J,
T
STG
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Max.
-0.78
-0.62
-4.9
540
4.3
± 12
-5.0
-55 to + 150
Units
A
mW
mW/°C
V
V/ns
°C
Thermal Resistance
R
θJA
Maximum Junction-to-Ambient
Parameter
Typ.
Max.
230
Units
°C/W
1
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2014 International Rectifier
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October 28, 2014
IRLML6302PbF-1
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
ΔV
(BR)DSS
/ΔT
J
Breakdown Voltage Temp. Coefficient
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-20
-0.70
0.56
Typ.
-4.9
2.4
0.56
1.0
13
18
22
22
97
53
28
Max. Units
Conditions
V
V
GS
= 0V, I
D
= -250µA
mV/°C Reference to 25°C, I
D
= -1mA
0.60
V
GS
= -4.5V, I
D
= -0.61A
Ω
0.90
V
GS
= -2.7V, I
D
= -0.31A
-1.5
V
V
DS
= V
GS
, I
D
= -250µA
S
V
DS
= -10V, I
D
= -0.31A
-1.0
V
DS
= -16V, V
GS
= 0V
µA
-25
V
DS
= -16V, V
GS
= 0V, T
J
= 125°C
-100
V
GS
= -12V
nA
100
V
GS
= 12V
3.6
I
D
= -0.61A
0.84
nC V
DS
= -16V
1.5
V
GS
= -4.5V, See Fig. 6 and 9
V
DD
= -10V
I
D
= -0.61A
ns
R
G
= 6.2Ω
R
D
= 16Ω, See Fig. 10
V
GS
= 0V
pF
V
DS
= -15V
= 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
-0.54
–––
35
26
-4.9
-1.2
53
39
V
ns
nC
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -0.61A, V
GS
= 0V
T
J
= 25°C, I
F
= -0.61A
di/dt = -100A/μs
D
G
S
Repetitive rating; pulse width
T
J
≤
150°C
I
SD
≤
-0.61A, di/dt
≤
76A/µs, V
DD
≤V
(BR)DSS
,
limited by max. junction temperature. ( See fig. 11 )
Pulse width
≤
300µs; duty cycle
≤
2%.
Surface mounted on FR-4 board, t
≤
5sec.
2
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October 28, 2014
IRLML6302PbF-1
10
-I D , Drain-to-Source Current (A)
-ID , Drain-to-Source Current (A)
VGS
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
TOP
10
VGS
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
TOP
1
1
0.1
0.1
-1.5V
20μs PULSE WIDTH
T
J
= 150°C
0.1
1
10
0.01
0.1
-1.5V
1
20μs PULSE WIDTH
T
J
= 25°C
A
10
0.01
A
-VDS , Drain-to-Source Voltage (V)
-V , Drain-to-Source Voltage (V)
DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
10
2.0
-I
D
, Drain-to-Source Current (A)
T
J
= 25°C
T
J
= 150°C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= -0.61A
1.5
1
1.0
0.1
0.5
0.01
1.5
2.0
2.5
3.0
V
DS
= -10V
20μs PULSE WIDTH
3.5
4.0
4.5
A
0.0
-60
-40
-20
0
20
40
60
80
V
GS
= -4.5V
100 120 140 160
A
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
3
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2014 International Rectifier
Fig 4.
Normalized On-Resistance
Vs. Temperature
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October 28, 2014
IRLML6302PbF-1
180
160
140
-V
GS
, Gate-to-Source Voltage (V)
C
iss
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
10
I
D
= -0.61A
V
DS
= -16V
8
C, Capacitance (pF)
120
100
80
60
40
20
0
1
C
oss
6
C
rss
4
2
10
100
A
0
0.0
FOR TEST CIRCUIT
SEE FIGURE 9
1.0
2.0
3.0
4.0
A
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
10
10
-I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
-I
D
, Drain Current (A)
1
100μs
T
J
= 150°C
T
J
= 25°C
0.1
1
1ms
10ms
0.01
0.4
0.6
0.8
1.0
V
GS
= 0V
1.2
A
1.4
0.1
1
T
A
= 25°C
T
J
= 150°C
Single Pulse
10
100
A
-V
SD
, Source-to-Drain Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
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2014 International Rectifier
Fig 8.
Maximum Safe Operating Area
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October 28, 2014
IRLML6302PbF-1
Q
G
V
DS
V
GS
R
G
R
D
-4.5V
V
G
-4.5V
Charge
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 9a.
Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
Fig 10a.
Switching Time Test Circuit
V
DS
50KΩ
12V
.2μF
.3μF
90%
V
GS
-3mA
I
G
I
D
Current Sampling Resistors
Fig 9b.
Gate Charge Test Circuit
1000
Thermal Response (Z
thJA
)
100
D = 0.50
0.20
0.10
10
0.05
0.02
0.01
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.0001
0.001
0.01
0.1
1
10
100
1
0.1
0.00001
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
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2014 International Rectifier
Submit Datasheet Feedback
October 28, 2014
+
D.U.T.
V
DS
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
t
1
, Rectangular Pulse Duration (sec)
+
-
Q
GS
Q
GD
D.U.T.
V
DD
-
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