IRGP6650DPbF
IRGP6650D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
V
CES
= 600V
I
C
= 50A, T
C
=100°C
t
SC
5µs,
T
J(max)
= 175°C
V
CE(ON)
typ. = 1.65V @ I
C
= 35A
G
E
C
C
C
n-channel
G
Gate
Applications
Welding
H Bridge Converters
G
IRGP6650DPbF
TO‐247AC
C
Collector
C
E
GC
E
IRGP6650D‐EPbF
TO‐247AD
E
Emitter
Features
Low V
CE(ON)
and Switching Losses
Optimized Diode for Full Bridge Hard Switch Converters
Square RBSOA and Maximum Temperature of 175°C
5µs Short Circuit
Positive V
CE (ON)
Temperature Co-efficient
Lead-free, RoHS compliant
Base part number
IRGP6650DPbF
IRGP6650D-EPbF
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
FRM
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, V
GE
= 15V
Clamped Inductive Load Current, V
GE
= 20V
Diode Repetitive Peak Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Package Type
TO-247AC
TO-247AD
Benefits
High Efficiency in a Wide Range of Applications
Optimized for Welding and H Bridge Converters
Improved Reliability due to Rugged Hard Switching
Performance and High Power Capability
Enables Short Circuit Protection Operation
Excellent Current Sharing in Parallel Operation
Environmentally friendly
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRGP6650DPbF
IRGP6650D-EPbF
Max.
600
80
50
105
140
25
140
±20
306
153
-40 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
°C
Thermal Resistance
R
JC
(IGBT)
R
JC
(Diode)
R
CS
R
JA
1
Parameter
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
© 2014 International Rectifier
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
Max.
0.49
3.35
–––
40
Units
°C/W
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November 14, 2014
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)CES
V
(BR)CES
/T
J
Parameter
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Min.
600
—
IRGP6650DPbF/IRGP6650D-EPbF
Typ.
—
0.45
Max.
—
—
Units
Conditions
V
V
GE
= 0V, I
C
= 100µA
V/°C V
GE
= 0V, I
C
= 1.0mA (25°C-175°C)
—
1.65
V
CE(on)
Collector-to-Emitter Saturation Voltage
—
2.05
—
2.10
Gate Threshold Voltage
4.0
—
V
GE(th)
Threshold Voltage Temperature Coeff.
—
-18
V
GE(th)
/T
J
gfe
Forward Transconductance
—
22
—
1.0
I
CES
Collector-to-Emitter Leakage Current
—
600
—
—
I
GES
Gate-to-Emitter Leakage Current
—
1.80
Diode Forward Voltage Drop
V
F
—
1.30
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
SCSOA
Erec
t
rr
I
rr
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, Rg = 10L=210
µ
H.
R
is measured at T
J
of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement.
fsw =40KHz, refer to figure 26.
1.95
I
C
= 35A, V
GE
= 15V, T
J
= 25°C
V
—
I
C
= 35A, V
GE
= 15V, T
J
= 150°C
—
I
C
= 35A, V
GE
= 15V, T
J
= 175°C
6.5
V
V
CE
= V
GE
, I
C
= 1.0mA
—
mV/°C V
CE
= V
GE
, I
C
= 1.0mA (25°C-175°C)
—
S
V
CE
= 50V, I
C
= 35A, PW = 20µs
50
V
GE
= 0V, V
CE
= 600V
µA
—
V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
±100
nA V
GE
= ±20V
2.80
I
F
= 8A
V
—
I
F
= 8A, T
J
= 175°C
Max
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Units
nC
I
C
= 35A
V
GE
= 15V
V
CC
= 400V
Conditions
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
75
20
30
300
630
930
40
30
105
20
640
930
1570
40
30
120
60
2220
130
65
µJ
I
C
= 35A, V
CC
= 400V, V
GE
=15V
R
G
= 10, L=210µH, T
J
= 25°C
ns
Energy losses include tail & diode
reverse recovery
µJ
I
C
= 35A, V
CC
= 400V, V
GE
=15V
R
G
= 10, L=210µH, T
J
= 175°C
Energy losses include tail & diode
reverse recovery
V
GE
= 0V
V
CC
= 30V
f = 1.0MHz
T
J
= 175°C, I
C
= 140A
V
CC
= 480V, Vp
≤
600V
V
GE
= +20V to 0V
ns
pF
FULL SQUARE
5
—
—
—
—
165
50
14
—
—
—
—
T
J
= 150°C,V
CC
= 400V, Vp
≤
600V
µs
V = +15V to 0V
GE
µJ
ns
A
T
J
= 175°C
V
CC
= 400V, I
F
= 8A, V
GE
= 15V
Rg = 22L=1.0mH, Ls=150nH
2
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© 2014 International Rectifier
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November 14, 2014
90
80
70
60
50
I
IRGP6650DPbF/IRGP6650D-EPbF
For both:
Duty cycle : 50%
Tj = 175°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 153W
Square Wave:
V
CC
Load Current ( A )
40
30
20
0.1
1
f , Frequency ( kHz )
10
100
Diode as specified
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
100
350
300
80
250
Ptot (W)
60
IC (A)
200
150
100
40
20
50
0
25
50
75
100
TC (°C)
125
150
175
0
25
50
75
100
TC (°C)
125
150
175
Fig. 2
- Maximum DC Collector Current vs.
Case Temperature
1000
1000
Fig. 3
- Power Dissipation vs.
Case Temperature
100
10µsec
IC (A)
100
IC (A)
10
100µsec
DC
1msec
10
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
VCE (V)
100
1000
1
10
100
VCE (V)
1000
Fig. 4
- Forward SOA
T
C
= 25°C; T
J
≤
175°C; V
GE
= 15V
3
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© 2014 International Rectifier
Fig. 5
- Reverse Bias SOA
T
J
= 175°C; V
GE
= 20V
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November 14, 2014
140
120
100
ICE (A)
IRGP6650DPbF/IRGP6650D-EPbF
140
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
ICE (A)
120
100
80
60
40
20
0
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
80
60
40
20
0
0
2
4
6
V CE (V)
8
10
0
2
4
6
V CE (V)
8
10
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 20µs
140
120
100
ICE (A)
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 20µs
140
-40°C
25°C
175°C
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
120
100
IF (A)
80
60
40
20
0
0
2
4
6
V CE (V)
8
10
80
60
40
20
0
0.0
1.0
2.0
3.0
V F (V)
4.0
5.0
6.0
Fig. 8
- Typ. IGBT Output Characteristics
T
J
= 175°C; tp = 20µs
8
Fig. 9
- Typ. Diode Forward Voltage Drop
Characteristics
8
6
ICE = 18A
ICE = 35A
VCE (V)
6
VCE (V)
ICE = 70A
4
ICE = 18A
ICE = 35A
ICE = 70A
4
2
2
0
5
10
V GE (V)
15
20
0
5
10
V GE (V)
15
20
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= -40°C
4
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© 2014 International Rectifier
Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 25°C
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November 14, 2014
8
IRGP6650DPbF/IRGP6650D-EPbF
140
120
6
ICE = 18A
ICE = 35A
ICE (A)
100
80
60
40
20
TJ = 25°C
TJ = 175°C
VCE (V)
ICE = 70A
4
2
0
5
10
V GE (V)
15
20
0
2
4
6
8
10
12
14
16
V GE (V)
Fig. 12
- Typical V
CE
vs. V
GE
T
J
= 175°C
4000
1000
Fig. 13
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 20µs
3000
Swiching Time (ns)
100
tdOFF
tF
tdON
tR
Energy (
J)
2000
10
1000
EOFF
EON
1
0
0
10
20
30
40
50
60
70
IC (A)
0
10
20
30
40
50
60
70
IC (A)
Fig. 14
- Typ. Energy Loss vs. I
C
T
J
= 175°C; ; V
CE
= 400V, R
G
= 10; V
GE
= 15V
3000
Fig. 15
- Typ. Switching Time vs. I
C
T
J
= 175°C; V
CE
= 400V, R
G
= 10; V
GE
= 15V
1000
2500
Swiching Time (ns)
tdOFF
tdON
100
tF
tR
Energy (J)
2000
1500
EOFF
1000
EON
500
0
20
40
60
80
100
Rg (
)
10
0
20
40
60
80
100
RG (
)
Fig. 16
- Typ. Energy Loss vs. R
G
T
J
= 175°C; V
CE
= 400V, I
CE
= 35A; V
GE
= 15V
5
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© 2014 International Rectifier
Fig. 17
- Typ. Switching Time vs. R
G
T
J
= 175°C; V
CE
= 400V, I
CE
= 35A; V
GE
= 15V
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November 14, 2014
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