FastIRFET™
IRFH7182PbF
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
max
(@ V
GS
= 10V)
Q
g (typical)
R
g (typical)
(@T
C (Bottom)
= 25°C)
I
D
100
3.9
49
0.9
157
V
m
nC
A
PQFN 5X6 mm
Applications
Optimized for Secondary Side Synchronous Rectification
Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies
Hot Swap and Active O-Ring
BLDC Motor Drive
Features
Low R
DS(ON)
(<3.9m)
Low Thermal Resistance to PCB (<0.64°C/W)
100% Rg Tested
Low Profile (<1.05 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1
Benefits
Lower Conduction Losses
Increased Power Density
Increased Reliability
results in Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
IRFH7182PbF
Package Type
PQFN 5mm x 6 mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFH7182TRPbF
Units
V
Absolute Maximum Ratings
Parameter
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
C(Bottom)
= 25°C
I
D
@ T
C(Bottom)
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C(Bottom)
= 25°C
T
J
T
STG
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
± 20
23
157
99
320
4.0
195
0.03
A
W
W/°C
°C
-55 to + 150
Notes
through
are on page 8
1
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April 29, 2015
IRFH7182PbF
Min.
100
–––
–––
2.0
–––
–––
–––
–––
135
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
62
3.1
–––
-5.3
–––
–––
–––
–––
49
9.3
3.1
15.8
21
19
160
0.9
6.1
6.2
15
5.3
3120
1440
14
Max.
–––
–––
3.9
3.6
–––
1.0
100
-100
–––
74
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
V
mV/°C
m
V
mV/°C
µA
nA
S
nC
nC
ns
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 50A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 80V, V
GS
= 0V
V
GS
= 20V
V
GS
= -20V
V
DS
= 25V, I
D
= 50A
V
DS
= 50V
V
GS
= 10V
I
D
= 50A
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
Drain-to-Source Breakdown Voltage
BV
DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
V
GS(th)
I
DSS
Drain-to-Source Leakage Current
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs
Forward Transconductance
Q
g
Total Gate Charge
Q
gs1
Pre-Vth Gate-to-Source Charge
Q
gs2
Post-Vth Gate-to-Source Charge
Q
gd
Gate-to-Drain Charge
Q
godr
Gate Charge Overdrive
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
Q
oss
Output Charge
R
G
Gate Resistance
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
Fall Time
t
f
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Diode Characteristics
Parameter
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
Avalanche Characteristics
E
AS (Thermally limited)
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
V
DS
= 50V, V
GS
= 0V
V
DD
= 50V, V
GS
= 10V
I
D
= 50A
R
G
= 1.0
V
GS
= 0V
pF V
DS
= 50V
ƒ = 1.0MHz
Min.
Typ.
Max. Units
Conditions
–––
–––
157
MOSFET symbol
showing the
A
integral reverse
–––
–––
320
p-n junction diode.
–––
0.8
1.3
V
T
J
= 25°C, I
S
= 50A, V
GS
=0V
–––
65
98
ns T
J
= 25°C, I
F
= 50A, V
DD
= 50V
–––
113
170
nC di/dt = 100A/µs
D
G
S
Typ.
–––
–––
Parameter
Typ.
–––
–––
–––
–––
Max.
728
38
Max.
0.64
15
31
19
Units
mJ
A
Units
°C/W
Thermal Resistance
R
JC
(Bottom) Junction-to-Case
Junction-to-Case
R
JC
(Top)
R
JA
R
JA
(<10s)
Junction-to-Ambient
Junction-to-Ambient
2
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1000
TOP
VGS
15V
10V
7.0V
6.5V
6.0V
5.5V
5.0V
4.5V
IRFH7182PbF
1000
TOP
VGS
15V
10V
7.0V
6.5V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
4.5V
10
4.5V
10
60µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
1000
V DS, Drain-to-Source Voltage (V)
60µs PULSE WIDTH
Tj = 150°C
1
0.1
1
10
100
1000
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 2.
Typical Output Characteristics
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
ID = 50A
V GS = 10V
ID, Drain-to-Source Current (A)
100
TJ = 150°C
TJ = 25°C
10
1
V DS = 50V
60µs PULSE WIDTH
0.1
2
3
4
5
6
V GS, Gate-to-Source Voltage (V)
-60 -40 -20 0
20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + Cgd, C ds SHORTED
C rss = C gd
Fig 4.
Normalized On-Resistance vs. Temperature
14
ID= 50A
V GS, Gate-to-Source Voltage (V)
12
10
8
6
4
2
0
10000
C, Capacitance (pF)
Coss
C oss = Cds + Cgd
V DS= 80V
V DS= 50V
V DS= 20V
Ciss
1000
Crss
100
10
1
10
V DS, Drain-to-Source Voltage (V)
100
0
10
20
30
40
50
60
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
3
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Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
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April 29, 2015
1000
IRFH7182PbF
1000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ISD, Reverse Drain Current (A)
100
100µsec
100
TJ = 150°C
10
1msec
10
TJ = 25°C
1
10msec
0.1
V GS = 0V
1.0
0.2
0.4
0.6
0.8
1.0
1.2
V SD, Source-to-Drain Voltage (V)
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
DC
0.01
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
160
V GS(th) , Gate threshold Voltage (V)
Fig 8.
Maximum Safe Operating Area
4.0
140
120
ID, Drain Current (A)
3.5
100
80
60
40
20
0
25
50
75
100
125
150
TC , Case Temperature (°C)
3.0
2.5
ID = 250µA
ID = 1.0mA
ID = 1.0A
2.0
1.5
-75 -50 -25
0
25
50
75 100 125 150
TJ , Temperature ( °C )
Fig 9.
Maximum Drain Current vs. Case Temperature
1
Thermal Response ( Z thJC ) °C/W
Fig 10.
Threshold Voltage vs. Temperature
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
0.0001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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April 29, 2015
1000
IRFH7182PbF
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj
= 125°C and
Tstart =25°C (Single Pulse)
Avalanche Current (A)
100
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
j
= 25°C and
Tstart = 125°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
Fig 12.
Typical Avalanche Current vs. Pulse Width
RDS(on), Drain-to -Source On Resistance (m
)
12
11
10
9
8
7
6
5
4
3
2
4
6
8
10
12
14
16
18
20
3000
ID = 50A
T J = 125°C
EAS , Single Pulse Avalanche Energy (mJ)
2500
2000
1500
1000
500
0
25
50
75
ID
TOP
12A
24A
BOTTOM 38A
T J = 25°C
100
125
150
VGS, Gate -to -Source Voltage (V)
Starting T J , Junction Temperature (°C)
Fig 13.
On–Resistance vs. Gate Voltage
Fig 14.
Maximum Avalanche Energy vs. Drain Current
5
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April 29, 2015
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