PD - 97113
IRGB4064DPbF
INSULATED GATE BIPOLAR TRANSISTOR
WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
•
•
•
•
•
•
•
•
•
•
Low V
CE (on)
Trench IGBT Technology
Low Switching Losses
Maximum Junction temperature 175 °C
5µs SCSOA
Square RBSOA
100% of The Parts Tested for I
LM
Positive V
CE (on)
Temperature Coefficient.
Ultra Fast Soft Recovery Co-pak Diode
Tighter Distribution of Parameters
Lead-Free Package
G
E
C
V
CES
= 600V
I
C
=
10A, T
C
= 100°C
t
sc
> 5µs, T
jmax
= 175°C
n-channel
C
V
CE(on) typ.
=
1.6V
Benefits
•
High Efficiency in a Wide Range of Applications
•
Suitable for a Wide Range of Switching Frequencies due
to Low V
CE (ON)
and Low Switching Losses
•
Rugged Transient Performance for Increased Reliability
•
Excellent Current Sharing in Parallel Operation
•
Low EMI
E
G
C
TO-220AB
G
C
E
Gate
Collector
Emitter
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@T
C
=25°C
I
F
@T
C
=100°C
I
FM
V
GE
P
D
@ T
C
=25°
P
D
@ T
C
=100°
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
c
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
d
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Max.
600
20
10
40
40
20
10
40
±20
±30
101
50
-55 to + 175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
°C
Thermal Resistance
Parameter
R
θJC
R
θJC
R
θCS
R
θJA
Wt
Junction-to-Case - IGBT
e
Junction-to-Case - Diode
e
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
e
Weight
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
1.44
Max.
1.49
3.66
–––
62
Units
°C/W
g
1
www.irf.com
11/28/06
IRGB4064DPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
∆V
(BR)CES
/∆T
J
Min. Typ. Max. Units
600
—
—
—
—
4.0
—
—
—
—
—
—
—
—
0.47
1.6
1.9
2.0
—
-11
6.9
—
328
2.5
1.7
—
—
—
1.91
—
—
6.5
—
—
25
—
3.1
—
±100
nA
V
V
S
µA
V
V
Conditions
V
GE
= 0V, I
C
= 100µA
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
f
Ref.Fig
CT6
V/°C V
GE
= 0V, I
C
= 500µA (-55°C-175°C)
I
C
= 10A, V
GE
= 15V, T
J
= 25°C
I
C
= 10A, V
GE
= 15V, T
J
= 150°C
I
C
= 10A, V
GE
= 15V, T
J
= 175°C
V
CE
= V
GE
, I
C
= 275µA
V
CE
= 50V, I
C
= 10A, PW = 80µs
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
I
F
= 10A
I
F
= 10A, T
J
= 175°C
V
GE
= ±20V
mV/°C V
CE
= V
GE
, I
C
= 1.0mA (25°C - 175°C)
V
CE(on)
V
GE(th)
∆V
GE(th)
/∆TJ
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
5,6,7,9,
10 ,11
9,10,11,12
gfe
I
CES
V
FM
I
GES
8
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Q
ge
Q
gc
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
SCSOA
Erec
t
rr
I
rr
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Min. Typ. Max. Units
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
21
5.3
8.9
29
200
229
27
15
79
21
99
316
415
27
16
98
33
594
49
17
32
8.0
13
71
308
339
37
23
90
30
—
—
—
—
—
—
—
—
—
—
pF
V
GE
= 0V
V
CC
= 30V
f = 1.0Mhz
ns
µJ
ns
µJ
nC
I
C
= 10A
V
GE
= 15V
V
CC
= 400V
Conditions
Ref.Fig
24
CT1
I
C
= 10A, V
CC
= 400V, V
GE
= 15V
R
G
= 22Ω, L = 1.0mH, T
J
= 25°C
Energy losses include tail & diode reverse recovery
CT4
I
C
= 10A, V
CC
= 400V, V
GE
= 15V
R
G
= 22Ω, L = 1.0mH, T
J
= 25°C
CT4
I
C
= 10A, V
CC
= 400V, V
GE
= 15V
R
G
=22Ω, L=1.0mH, T
J
= 175°C
fÃ
13,15
CT4
WF1,WF2
14,16
CT4
WF1,WF2
Energy losses include tail & diode reverse recovery
I
C
= 10A, V
CC
= 400V, V
GE
= 15V
R
G
= 22Ω, L = 1.0mH, T
J
= 175°C
22
T
J
= 175°C, I
C
= 40A
FULL SQUARE
5
—
—
—
—
191
62
16
—
—
—
—
µs
µJ
ns
A
V
CC
= 480V, Vp =600V
Rg = 22Ω, V
GE
= +15V to 0V
V
CC
= 400V, Vp =600V
Rg = 22Ω, V
GE
= +15V to 0V
T
J
= 175°C
V
CC
= 400V, I
F
= 10A
V
GE
= 15V, Rg = 22Ω, L=1.0mH
4
CT2
22, CT3
WF4
17,18,19
20,21
WF3
Notes:
V
CC
= 80% (V
CES
), V
GE
= 15V, L = 28 µH, R
G
= 22
Ω.
Pulse width limited by max. junction temperature.
R
θ
is measured at T
J
approximately 90°C
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely
2
www.irf.com
IRGB4064DPbF
24
20
16
12
8
4
0
0
20
40
60
80 100 120 140 160 180
TC (°C)
Ptot (W)
IC (A)
120
100
80
60
40
20
0
0
20
40
60
80 100 120 140 160 180
TC (°C)
Fig. 1
- Maximum DC Collector Current vs.
Case Temperature
100
100
Fig. 2
- Power Dissipation vs. Case
Temperature
10µsec
10
IC (A)
100µsec
IC A)
1msec
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
VCE (V)
100
1000
10
1
10
100
1000
VCE (V)
Fig. 3
- Forward SOA,
T
C
= 25°C; T
J
≤
175°C
40
VGE = 18V
40
Fig. 4
- Reverse Bias SOA
T
J
= 175°C; V
CE
= 15V
VGE = 18V
30
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
ICE (A)
30
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
ICE (A)
20
20
10
10
0
0
2
4
6
VCE (V)
8
10
0
0
2
4
6
VCE (V)
8
10
Fig. 5
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 80µs
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 80µs
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3
IRGB4064DPbF
40
VGE = 18V
30
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
20
IF (A)
80
70
60
50
40
30
-40°C
25°C
175°C
ICE (A)
10
20
10
0
0
2
4
6
VCE (V)
8
10
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
VF (V)
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 175°C; tp = 80µs
20
18
16
14
VCE (V)
Fig. 8
- Typ. Diode Forward Characteristics
tp = 80µs
20
18
16
ICE = 5.0A
VCE (V)
14
12
10
8
6
4
2
0
ICE = 5.0A
ICE = 10A
ICE = 20A
12
10
8
6
4
2
0
5
10
ICE = 10A
ICE = 20A
15
VGE (V)
20
5
10
VGE (V)
15
20
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= -40°C
20
18
16
14
VCE (V)
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= 25°C
40
TJ = 25°C
TJ = 175°C
ICE = 5.0A
ICE = 10A
ICE = 20A
ICE (A)
30
12
10
8
6
4
2
0
5
10
20
10
0
15
VGE (V)
20
0
5
10
VGE (V)
15
20
Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 175°C
Fig. 12
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 10µs
4
www.irf.com
IRGB4064DPbF
600
500
400
Energy (µJ)
Swiching Time (ns)
100
1000
tdOFF
tF
tdON
300
200
100
0
0
4
EOFF
10
tR
EON
8
12
I C (A)
16
20
24
1
0
4
8
12
16
20
24
IC (A)
Fig. 13
- Typ. Energy Loss vs. I
C
T
J
= 175°C; L = 1mH; V
CE
= 400V, R
G
= 22Ω; V
GE
= 15V.
350
300
250
200
150
100
50
0
0
25
50
75
100
125
Fig. 14
- Typ. Switching Time vs. I
C
T
J
= 175°C; L=1mH; V
CE
= 400V
R
G
= 22Ω; V
GE
= 15V
1000
EOFF
EON
Swiching Time (ns)
Energy (µJ)
100
tdOFF
tdON
tF
tR
10
0
25
50
75
100
125
RG (Ω)
Fig. 15
- Typ. Energy Loss vs. R
G
T
J
= 175°C; L = 1mH; V
CE
= 400V, I
CE
= 10A; V
GE
= 15V
24
Fig. 16-
Typ. Switching Time vs. R
G
T
J
= 175°C; L=1mH; V
CE
= 400V
I
CE
= 10A; V
GE
= 15V
20
RG (Ω)
20
RG =10
Ω
RG =22
Ω
RG =47
Ω
RG = 100
Ω
16
16
IRR (A)
12
IRR (A)
20
24
12
8
8
4
4
0
0
4
8
12
16
0
0
25
50
75
100
125
IF (A)
RG (Ω)
Fig. 17
- Typical Diode I
RR
vs. I
F
T
J
= 175°C
Fig. 18
- Typical Diode I
RR
vs. R
G
T
J
= 175°C; I
F
= 10A
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