IRF7341GPbF
•
Advanced Process Technology
•
ÿ
Dual N-Channel MOSFET
•
ÿ
Ultra Low On-Resistance
•
ÿ
175°C Operating Temperature
•
ÿ
Repetitive Avalanche Allowed up to Tjmax
•
ÿ
Lead-Free
•
ÿ
Halogen-Free
V
DSS
55V
HEXFET
®
Power MOSFET
R
DS(on)
max
I
D
0.050@V
GS
= 10V
0.065@V
GS
= 4.5V
5.1A
4.42A
Description
These HEXFET ® Power MOSFET’s in a Dual SO-8 package
utilize the lastest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features of these
HEXFET Power MOSFET’s are a 175°C junction operating
temperature, fast switching speed and improved repetitive
avalanche rating. These benefits combine to make this design
an extremely efficient and reliable device for use in a wide
variety of other applications.
The 175°C rating for the SO-8 package provides improved
thermal performance with increased safe operating area and
dual MOSFET die capability make it ideal in a variety of power
applications. This dual, surface mount SO-8 can dramatically
reduce board space and is also available in Tape & Reel.
S1
G1
S2
G2
1
2
3
4
8
7
D1
D1
D2
D2
6
5
Top View
SO-8
Base Part Number
IRF7341GPbF
Package Type
SO-8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Orderable Part Number
IRF7341GPbF
IRF7341GTRPbF
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
E
AS
I
AR
E
AR
T
J
, T
STG
Drain-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Junction and Storage Temperature Range
Max.
55
5.1
4.2
42
2.4
1.7
16
± 20
140
5.1
See Fig. 14, 15, 16
-55 to + 175
Units
V
A
W
W
mW/°C
V
mJ
A
mJ
°C
Thermal Resistance
Parameter
R
θJA
Maximum Junction-to-Ambient
Max.
62.5
Units
°C/W
1
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IRF7341GPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
ΔV
(BR)DSS
/ΔT
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Min.
55
–––
–––
1.0
10.4
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.052
0.043
0.056
–––
–––
–––
–––
–––
–––
29
2.9
7.3
9.2
7.7
31
12.5
780
190
66
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250μA
––– V/°C Reference to 25°C, I
D
= 1mA
0.050
V
GS
= 10V, I
D
= 5.1A
Ω
0.065
V
GS
= 4.5V, I
D
= 4.42A
–––
V
V
DS
= V
GS
, I
D
= 250μA
–––
S
V
DS
= 10V, I
D
= 5.2A
2.0
V
DS
= 44V, V
GS
= 0V
µA
25
V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
44
I
D
= 5.2A
4.4
nC
V
DS
= 44V
11
V
GS
= 10V
–––
V
DD
= 28V
–––
I
D
= 1.0A
ns
–––
R
G
= 6.0Ω
–––
V
GS
= 10V
–––
V
GS
= 0V
–––
pF
V
DS
= 25V
–––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
51
76
2.4
A
42
1.2
77
114
V
ns
nC
Conditions
D
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
S
T
J
= 25°C, I
S
= 2.6A, V
GS
= 0V
T
J
= 25°C, I
F
= 2.6A
di/dt = 100A/μs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Surface mounted on FR-4 board,
t
≤
10sec.
Pulse width
≤
300μs; duty cycle
≤
2%.
2
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IRF7341GPbF
100
ID, Drain-to-Source Current (A)
10
ID, Drain-to-Source Current (A)
VGS
TOP
15.0V
10.0V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 2.7V
100
10
2.7V
2.7V
VGS
15.0V
10.0V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 2.7V
TOP
1
1
20μs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
0.1
0.1
1
20μs PULSE WIDTH
Tj = 175°C
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.5
T
J
= 25
°
C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 5.2A
I
D
, Drain-to-Source Current (A)
2.0
T
J
= 175
°
C
10
1.5
1.0
0.5
1
2.0
V DS = 25V
20μs PULSE WIDTH
3.0
4.0
5.0
6.0
7.0
0.0
-60 -40 -20 0
V
GS
= 10V
20 40 60 80 100 120 140 160 180
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
3
Fig 4.
Normalized On-Resistance
Vs. Temperature
February 20, 2014
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IRF7341GPbF
1400
1200
V
GS
, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
C iss
= Cgs + Cgd ,
SHORTED
Crss = Cgd
Coss = Cds + Cgd
20
Cds
I
D
=
5.2A
16
V
DS
= 44V
V
DS
= 27V
V
DS
= 11V
C, Capacitance(pF)
1000
800
600
400
200
0
1
Ciss
12
8
Coss
Crss
10
100
4
0
0
10
20
30
40
50
VDS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T
J
= 175
°
C
10
I
D
, Drain Current (A)
100
10us
10
100us
1ms
1
10ms
T
J
= 25
°
C
1
0.1
0.2
V
GS
= 0 V
0.5
0.8
1.1
1.4
0.1
0.1
T
C
= 25 ° C
T
J
= 175 ° C
Single Pulse
1
10
100
1000
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
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Fig 8.
Maximum Safe Operating Area
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IRF7341GPbF
6.0
V
DS
5.0
R
D
V
GS
R
G
D.U.T.
+
I
D
, Drain Current (A)
4.0
-
V
DD
3.0
10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
2.0
Fig 10a.
Switching Time Test Circuit
V
DS
90%
1.0
0.0
25
50
T
C
, Case Temperature ( °C)
75
100
125
150
175
Fig 9.
Maximum Drain Current Vs.
Case Temperature
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
100
D = 0.50
Thermal Response (Z
thJA
)
10
0.20
0.10
0.05
0.02
1
0.01
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.0001
0.001
0.01
0.1
1
10
100
0.1
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 10.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
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2014 International Rectifier
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February 20, 2014
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