FastIRFET™
IRFHM7194TRPbF
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
max
(@ V
GS
= 10V)
Qg
(typical)
Rg
(typical)
(@T
C (Bottom)
= 25°C)
I
D
100
16.4
13
2.0
34
V
m
nC
A
PQFN 3.3 x 3.3 mm
Applications
Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies
Secondary Side Synchronous Rectifier
Features
Low R
DSon
(<16.4m)
Low Charge (typical 13nC)
Low Thermal Resistance to PCB (<3.4°C/W)
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial Qualification
Benefits
Lower Conduction Losses
Low Switching Losses
Enable better thermal dissipation
results in Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Standard Pack
Form
Quantity
Tape and Reel
4000
Base part number
IRFHM7194TRPbF
Package Type
PQFN 3.3mm x 3.3mm
Orderable Part Number
IRFHM7194TRPbF
Absolute Maximum Ratings
Parameter
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
C(Bottom)
= 25°C
I
D
@ T
C(Bottom)
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C(Bottom)
= 25°C
T
J
T
STG
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
± 20
9.3
34
21
95
2.8
37
0.022
Units
V
A
W
W/°C
°C
-55 to + 150
Notes
through
are on page 8
1
2016-2-26
Static @ T
J
= 25°C (unless otherwise specified)
BV
DSS
BV
DSS
/T
J
R
DS(on)
V
GS(th)
V
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
100
–––
–––
2.0
–––
–––
–––
–––
45
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
IRFHM7194TRPbF
Typ.
–––
48
13.7
––
-5.5
–––
–––
–––
–––
13
1.8
0.9
4.3
6.0
5.2
40
2.1
2.7
3.3
8.0
2.5
733
374
11
Max.
–––
–––
16.4
3.6
–––
1.0
100
-100
–––
19
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
V
mV/°C
m
V
mV/°C
µA
nA
S
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 20A
V
DS
= V
GS
, I
D
= 50µA
V
DS
= 80V, V
GS
= 0V
V
GS
= 20V
V
GS
= -20V
V
DS
= 25V, I
D
= 20A
V
DS
= 50V
V
GS
= 10V
nC
I
D
= 20A
nC
V
DS
= 50V, V
GS
= 0V
V
DD
= 50V, V
GS
= 10V
I
D
= 20A
ns
R
G
= 1.0
V
GS
= 0V
pF
V
DS
= 50V
ƒ = 1.0MHz
Avalanche Characteristics
E
AS (Thermally limited)
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.8
30
26
Typ.
–––
–––
Max.
34
A
95
1.3
45
39
V
ns
nC
Units
Max.
220
12
Units
mJ
A
Diode Characteristics
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
Diode Forward Voltage
V
SD
t
rr
Q
rr
Reverse Recovery Time
Reverse Recovery Charge
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 20A, V
GS
= 0V
D
G
S
T
J
= 25°C, I
F
= 20A, V
DD
= 50V
di/dt = 100A/µs
Thermal Resistance
Parameter
R
JC
(Bottom)
R
JC
(Top)
R
JA
R
JA
(<10s)
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
Typ.
–––
–––
–––
–––
Max.
3.4
35
45
29
Units
°C/W
2
2016-2-26
1000
TOP
VGS
15V
10V
7.0V
6.5V
6.0V
5.5V
5.0V
4.5V
IRFHM7194TRPbF
1000
TOP
VGS
15V
10V
7.0V
6.5V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
4.5V
10
10
4.5V
60µs
PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
0.1
1
60µs
PULSE WIDTH
Tj = 150°C
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 2.
Typical Output Characteristics
2.0
ID = 20A
VGS = 10V
ID, Drain-to-Source Current (A)
100
1.7
1.4
10
TJ = 150°C
1
TJ = 25°C
VDS = 50V
60µs PULSE WIDTH
0.1
1
2
3
4
5
6
VGS, Gate-to-Source Voltage (V)
1.1
0.8
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Fig 4.
Normalized On-Resistance vs. Temperature
14
VGS, Gate-to-Source Voltage (V)
12
10
8
6
4
2
0
ID= 20A
VDS = 80V
VDS = 50V
VDS = 20V
10000
C, Capacitance (pF)
1000
Coss
Ciss
Crss
100
10
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
0
4
8
12
16
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
3
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
2016-2-26
1000
100
IRFHM7194TRPbF
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100µsec
10
10
TJ = 150°C
TJ = 25°C
1
1msec
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
10msec
DC
100
1
VGS = 0V
0.1
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
VSD, Source-to-Drain Voltage (V)
0.01
VDS , Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
36
VGS(th), Gate threshold Voltage (V)
Fig 8.
Maximum Safe Operating Area
4.0
3.5
3.0
2.5
2.0
1.5
1.0
ID = 50µA
ID = 250µA
ID = 1.0mA
ID = 1A
32
28
ID, Drain Current (A)
24
20
16
12
8
4
0
25
50
75
100
125
150
TC , Case Temperature (°C)
-75 -50 -25
0
25
50
75 100 125 150
TJ , Temperature ( °C )
Fig 9.
Maximum Drain Current vs. Case Temperature
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
Fig 10.
Threshold Voltage Vs. Temperature
Thermal Response ( ZthJC ) °C/W
1
0.1
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
0.0001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
2016-2-26
)
RDS(on), Drain-to -Source On Resistance (m
IRFHM7194TRPbF
60
EAS , Single Pulse Avalanche Energy (mJ)
1000
ID = 20A
50
40
30
20
10
0
4
6
8
10
12
14
16
18
20
900
800
700
600
500
400
300
200
100
0
25
50
75
ID
TOP
2.4A
3.8A
BOTTOM 12A
TJ = 125°C
TJ = 25°C
100
125
150
VGS, Gate -to -Source Voltage (V)
Starting TJ , Junction Temperature (°C)
Fig 12.
On– Resistance vs. Gate Voltage
Fig 13.
Maximum Avalanche Energy vs. Drain Current
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj
= 125°C and
Tstart =25°C (Single Pulse)
Avalanche Current (A)
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
j = 25°C and
Tstart = 125°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
1.0E-01
Fig 14.
Single Avalanche Current vs. pulse Width
5
2016-2-26
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