IG BT
TRENCHSTOP
TM
IGBT3 Chip
SIGC100T60R3E
Dat a She et
Indust rial Po wer C o ntrol
SIGC100T60R3E
Table of Contents
Features and Applications ............................................................................................................................... 3
Mechanical Parameters .................................................................................................................................... 3
Maximum Ratings ............................................................................................................................................. 4
Static and Electrical Characteristics .............................................................................................................. 4
Further Electrical Characteristics ................................................................................................................... 5
Chip Drawing ..................................................................................................................................................... 6
Revision History ............................................................................................................................................... 7
Relevant Application Notes ............................................................................................................................. 7
Legal Disclaimer ............................................................................................................................................... 8
L7601L, L7601T
2
Rev. 2.1, 26.07.2017
SIGC100T60R3E
TRENCHSTOP
TM
IGBT3 Chip
Features:
600V trench & field stop technology
Low
V
CEsat
Low turn-off losses
Short tail current
Positive temperature coefficient
Easy paralleling
Recommended for:
Power modules
Discrete components
Applications:
Drives
White goods
Resonant applications
Die Size
9.73mm x 10.23mm
Package
Sawn on foil
Chip Type
SIGC100T60R3E
Mechanical Parameters
Die size
Emitter pad size
Gate pad size
Area total
Silicon thickness
Wafer size
V
CE
600V
I
Cn
200A
9.73 x 10.23
See chip drawing
mm
1.62 x 0.82
99.54
70
200
254
Photoimide
3200nm AlSiCu
Ni Ag – system
To achieve a reliable solder connection it is strongly
recommended not to consume the Ni layer completely during
production process
Electrically conductive epoxy glue and soft solder
Al, ≤500µm
0.65mm; max. 1.2mm
Ambient atmosphere air, temperature 17°C – 25°C
Acc. IEC 62258-3; Section 9.4 Storage Environment.
µm
mm
2
Maximum possible chips per wafer
Passivation frontside
Pad metal
Backside metal
Die bond
Wire bond
Reject ink dot size
for original and
Storage environment sealed MBB bags
(<6 months)
for open MBB bags
L7601L, L7601T
3
Rev. 2.1, 26.07.2017
SIGC100T60R3E
Maximum Ratings
In general, from reliability and lifetime point of view, the lower the operation junction temperature and/or the
applied voltage, the greater the expected lifetime of any semiconductor device.
Parameter
Collector-emitter voltage,
T
vj
=25C
DC collector current, limited by
T
vj max
1
Pulsed collector current,
t
p
limited by
T
vj max
2
Gate-emitter voltage
Virtual junction temperature
Short circuit data
1
/
2
/
3
V
GE
=15V,
V
CC
=360V,
T
vj
=150°C
Reverse bias safe operating area (RBSOA)
2
Symbol
V
CE
I
C
I
C,puls
V
GE
T
vj
t
sc
Value
600
-
600
20
-40 ... +175
6
Unit
V
A
A
V
°C
µs
I
C,max
= 400A,
V
CEmax
= 600V,
T
vj
150°C
Static Characteristics
(tested on wafer),
T
vj
=25C
Parameter
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Integrated gate resistor
Electrical Characteristics
2
Parameter
Collector-emitter saturation
voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
T
vj
=25°C
T
vj
=150°C
Symbol
V
CEsat
C
ies
C
oes
C
res
Conditions
V
GE
=15V,
I
C
=200A
Value
min.
-
-
-
-
-
typ.
1.45
1.7
12335
769
366
max.
1.9
-
-
-
-
pF
Unit
V
Symbol
V
(BR)CES
V
CEsat
V
GE(th)
I
CES
I
GES
r
G
Conditions
V
GE
=0V,
I
C
=4mA
V
GE
=15V,
I
C
=60A
I
C
=3.2mA,
V
GE
=V
CE
V
CE
=600V,
V
GE
=0V
V
CE
=0V,
V
GE
=20V
Value
min.
600
0.86
5.0
-
-
-
typ.
-
1.03
5.8
-
-
2
max.
-
1.20
6.5
10.1
600
-
µA
nA
V
Unit
V
CE
=25V,
V
GE
=0V,
f=1MHz
T
vj
=25C
1
2
Depending on thermal properties of assembly.
Not subject to production test - verified by design/characterization.
3
Allowed number of short circuits: <1000; time between short circuits: >1s.
L7601L, L7601T
4
Rev. 2.1, 26.07.2017
SIGC100T60R3E
Further Electrical Characteristics
Switching characteristics and thermal properties are depending strongly on module design and mounting
technology and can therefore not be specified for a bare die.
Application example
-
-
L7601L, L7601T
5
Rev. 2.1, 26.07.2017
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