StrongIRFET™
IRFH7787PbF
Application
Brushed motor drive applications
BLDC motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC inverters
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
typ.
max
I
D
75V
6.6m
8.0m
68A
Benefits
Improved gate, avalanche and dynamic dV/dt ruggedness
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and dI/dt capability
Lead-free, RoHS compliant
PQFN 5 x 6 mm
Base part number
IRFH7787PbF
Package Type
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFH7787TRPbF
RDS(on), Drain-to -Source On Resistance (m
)
18
ID = 41A
16
14
12
10
8
6
4
6
8
10
12
14
16
18
20
T J = 25°C
70
60
ID, Drain Current (A)
50
40
30
20
10
0
25
50
75
100
125
150
TC , Case Temperature (°C)
T J = 125°C
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
1
www.irf.com
© 2015 International Rectifier
Fig 2.
Maximum Drain Current vs. Case Temperature
Submit Datasheet Feedback
February 19, 2015
Absolute Maximum Rating
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
IRFH7787PbF
Max.
68
43
270
83
0.67
± 20
-55 to + 150
Units
A
W
W/°C
V
°C
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy
E
AS (Thermally limited)
Single Pulse Avalanche Energy
I
AR
Avalanche Current
Repetitive Avalanche Energy
E
AR
Thermal Resistance
Symbol
Junction-to-Case
R
JC
(Bottom)
Junction-to-Case
R
JC
(Top)
Junction-to-Ambient
R
JA
Junction-to-Ambient
R
JA
(<10s)
100
146
See Fig 15, 16, 23a, 23b
mJ
A
mJ
Parameter
Typ.
–––
–––
–––
–––
Max.
1.5
21
34
22
Units
°C/W
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
Min.
75
–––
–––
–––
2.1
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
V
GS
= 0V, I
D
= 250µA
60
––– mV/°C Reference to 25°C, I
D
= 1mA
6.6
7.5
–––
–––
–––
–––
–––
2.3
8.0
–––
3.7
1.0
150
100
-100
–––
m
V
µA
nA
V
GS
= 10V, I
D
= 41A
V
GS
= 6.0V, I
D
= 21A
V
DS
= V
GS
, I
D
= 100µA
V
DS
=75 V, V
GS
= 0V
V
DS
=75V,V
GS
= 0V,T
J
=125°C
V
GS
= 20V
V
GS
= -20V
Notes:
Repetitive
rating; pulse width limited by max. junction temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 120µH, R
G
= 50, I
AS
= 41A, V
GS
=10V.
I
SD
41A, di/dt
1140A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse
width
400µs; duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
R
is measured at T
J
approximately 90°C.
Limited by T
Jmax
, starting T
J
=25°C, L= 1mH, R
G
= 50, I
AS
= 17A, V
GS
=10V.
2
www.irf.com
© 2015 International Rectifier
Submit Datasheet Feedback
February 19, 2015
IRFH7787PbF
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg – Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Min.
110
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
75
18
23
52
7.3
16
53
12
4030
330
200
290
380
Typ.
–––
–––
–––
11
29
34
30
42
1.7
Max. Units
Conditions
–––
S V
DS
= 10V, I
D
= 41A
110
I
D
= 41A
–––
V
DS
= 38V
nC
–––
V
GS
= 10V
–––
–––
V
DD
= 38V
–––
I
D
= 41A
ns
–––
R
G
= 2.7
V
GS
= 10V
–––
–––
–––
–––
–––
–––
Max. Units
68
A
270
1.2
–––
–––
–––
–––
–––
–––
V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig.7
V
GS
= 0V, VDS = 0V to 60V
V
GS
= 0V, VDS = 0V to 60V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
C
oss eff.(ER)
(Energy Related)
C
oss eff.(TR)
Output Capacitance (Time Related)
Diode Characteristics
Symbol
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
V
SD
dv/dt
t
rr
Q
rr
I
RRM
Diode Forward Voltage
Peak Diode Recovery dv/dt
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
pF
D
G
S
T
J
= 25°C,I
S
= 41A,V
GS
= 0V
V/ns T
J
= 150°C,I
S
= 41A,V
DS
= 75V
T
J
= 25°C
V
DD
= 64V
ns
T
J
= 125°C
I
F
= 41A,
T
J
= 25°C di/dt = 100A/µs
nC
T
J
= 125°C
A T
J
= 25°C
3
www.irf.com
© 2015 International Rectifier
Submit Datasheet Feedback
February 19, 2015
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
IRFH7787PbF
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
4.5V
10
4.5V
10
60µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
1
0.1
1
60µs PULSE WIDTH
Tj = 150°C
10
100
V DS, Drain-to-Source Voltage (V)
Fig 3.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 4.
Typical Output Characteristics
2.5
ID = 41A
V GS = 10V
2.0
ID, Drain-to-Source Current (A)
100
TJ = 150°C
10
TJ = 25°C
1
V DS = 25V
1.5
1.0
60µs PULSE WIDTH
0.1
2.0
3.0
4.0
5.0
6.0
V GS, Gate-to-Source Voltage (V)
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 5.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
Fig 6.
Normalized On-Resistance vs. Temperature
14.0
ID= 41A
V GS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
V DS= 60V
V DS= 38V
V DS= 15V
C, Capacitance (pF)
10000
Ciss
1000
Coss
Crss
100
1
10
V DS, Drain-to-Source Voltage (V)
100
0
10 20 30 40 50 60 70 80 90 100
QG, Total Gate Charge (nC)
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
4
www.irf.com
© 2015 International Rectifier
Fig 8.
Typical Gate Charge vs.
Gate-to-Source Voltage
Submit Datasheet Feedback
February 19, 2015
1000
IRFH7787PbF
100µsec
100
TJ = 150°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
1msec
10
10
TJ = 25°C
OPERATION
IN THIS
AREA
LIMITED BY
R DS(on)
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0.1
1
10msec
DC
V GS = 0V
1.0
0.2
0.4
0.6
0.8
1.0
1.2
V SD, Source-to-Drain Voltage (V)
10
VDS, Drain-to-Source Voltage (V)
Fig 9.
Typical Source-Drain Diode Forward Voltage
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig 10.
Maximum Safe Operating Area
0.8
95
Id = 1.0mA
0.7
0.6
90
Energy (µJ)
0.5
0.4
0.3
0.2
0.1
85
80
75
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Temperature ( °C )
0.0
-10
0
10
20
30
40
50
60
70
80
VDS, Drain-to-Source Voltage (V)
Fig 11.
Drain-to-Source Breakdown Voltage
RDS(on), Drain-to -Source On Resistance (
m)
Fig 12.
Typical C
oss
Stored Energy
40
30
Vgs = 5.5V
Vgs = 6.0V
Vgs = 7.0V
Vgs = 8.0V
Vgs = 10V
20
10
0
0
20 40 60 80 100 120 140 160 180 200
ID, Drain Current (A)
Fig 13.
Typical On-Resistance vs. Drain Current
5
www.irf.com
© 2015 International Rectifier
Submit Datasheet Feedback
February 19, 2015
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
