IRGP6690DPbF
IRGP6690D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
V
CES
= 600V
I
C
= 90A, T
C
=100°C
t
SC
≥
5µs, T
J(max)
= 175°C
V
CE(ON)
typ. = 1.65V @ I
C
= 75A
Applications
• Welding
• H Bridge Converters
G
C
C
C
G
E
C
E
G
C
E
n-channel
G
Gate
IRGP6690DPbF
TO-247AC
C
Collector
IRGP6690D-EPbF
TO-247AD
E
Emitter
Features
Low V
CE(ON)
and switching losses
Optimized diode for full bridge hard switch converters
Square RBSOA and maximum junction temperature 175°C
5µs short circuit SOA
Positive V
CE (ON)
temperature coefficient
Lead-free, RoHS compliant
Base part number
IRGP6690DPBF
IRGP6690D-EPBF
Absolute Maximum Ratings
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
FRM
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, V
GE
= 15V
Clamped Inductive Load Current, V
GE
= 20V
Diode Repetitive Peak Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Package Type
TO-247AC
TO-247AD
Benefits
High efficiency in a wide range of applications
Optimized for welding and H bridge converters
Improved reliability due to rugged hard switching
performance and higher power capability
Enables short circuit protection scheme
Excellent current sharing in parallel operation
Environmentally friendly
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRGP6690DPBF
IRGP6690D-EPBF
Max.
600
140
90
225
300
45
300
±20
483
241
-40 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
Max.
0.31
2.10
–––
40
Units
V
A
V
W
C
Thermal Resistance
R
θJC
(IGBT)
R
θJC
(Diode)
R
θCS
R
θJA
Parameter
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Units
°C/W
1
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© 2014 International Rectifier
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November 14, 2014
IRGP6690DPbF/IRGP6690D-EPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)CES
ΔV
(BR)CES
/ΔT
J
Parameter
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Min.
600
—
Typ.
—
0.55
Max.
—
—
Units
Conditions
V
V
GE
= 0V, I
C
= 100µA
V/°C V
GE
= 0V, I
C
= 3mA (25°C-175°C)
—
1.65
—
2.05
V
CE(on)
Collector-to-Emitter Saturation Voltage
—
2.10
V
GE(th)
Gate Threshold Voltage
4.0
—
Threshold Voltage Temperature Coeff.
—
-19
ΔV
GE(th)
/ΔT
J
gfe
Forward Transconductance
—
50
—
1.5
I
CES
Collector-to-Emitter Leakage Current
—
1.4
Gate-to-Emitter Leakage Current
—
—
I
GES
—
2.3
Diode Forward Voltage Drop
V
FM
—
1.5
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
SCSOA
Erec
t
rr
I
rr
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 400µH, R
G
= 10Ω.
R
θ
is measured at T
J
of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement.
fsw =40KHz, refer to figure 26.
1.95
I
C
= 75A, V
GE
= 15V, T
J
= 25°C
V
—
I
C
= 75A, V
GE
= 15V, T
J
= 150°C
—
I
C
= 75A, V
GE
= 15V, T
J
= 175°C
6.5
V
V
CE
= V
GE
, I
C
= 2.1mA
—
mV/°C V
CE
= V
GE
, I
C
= 2.1mA (25°C-175°C)
—
S
V
CE
= 50V, I
C
= 75A, PW = 20µs
100
µA V
GE
= 0V, V
CE
= 600V
—
mA V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
±200
nA V
GE
= ±20V
3.3
V
I
F
= 18A
—
I
F
= 18A, T
J
= 175°C
Max
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Units
nC
I
C
= 75A
V
GE
= 15V
V
CC
= 400V
I
C
= 75A, V
CC
= 400V, V
GE
=15V
R
G
= 10Ω, L = 400µH, T
J
= 25°C
Energy losses include tail & diode
reverse recovery
Conditions
Parameter
Total Gate Charge
Gate-to-Emitter Charge
Gate-to-Collector Charge
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
140
40
60
2.4
2.2
4.6
85
86
222
53
3.1
2.8
5.9
67
92
227
78
4720
270
140
mJ
ns
mJ
I
C
= 75A, V
CC
= 400V, V
GE
=15V
R
G
= 10Ω, L = 400µH, T
J
= 175°C
Energy losses include tail & diode
reverse recovery
V
GE
= 0V
V
CC
= 30V
f = 1.0MHz
T
J
= 175°C, I
C
= 300A
V
CC
= 480V, Vp
≤
600V
V
GE
= +20V to 0V
T
J
= 150°C,V
CC
= 400V, Vp
≤
600V
V
GE
= +15V to 0V
T
J
= 175°C
V
CC
= 400V, I
F
= 18A
V
GE
= 15V, Rg = 10Ω
ns
pF
FULL SQUARE
5
—
—
—
—
210
90
26
—
—
—
—
µs
µJ
ns
A
2
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© 2014 International Rectifier
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November 14, 2014
IRGP6690DPbF/IRGP6690D-EPbF
140
120
Load Current ( A )
100
80
60
40
20
0.1
1
f , Frequency ( kHz )
10
Square Wave:
V
CC
For both:
Duty cycle : 50%
Tj = 175°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 241W
I
Diode as specified
100
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
140
120
500
400
100
60
40
Ptot (W)
25
50
75
100
TC (°C)
125
150
175
IC (A)
80
300
200
100
20
0
0
25
50
75
100
TC (°C)
125
150
175
Fig. 2
- Maximum DC Collector Current vs.
Case Temperature
1000
100
10µsec
100µsec
1msec
IC (A)
Fig. 3
- Power Dissipation vs.
Case Temperature
100
IC (A)
10
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
VCE (V)
100
10
1
10
100
V CE (V)
1000
Fig. 4
- Forward SOA
T
C
= 25°C; T
J
≤
175°C; V
GE
= 15V
3
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© 2014 International Rectifier
Fig. 5
- Reverse Bias SOA
T
J
= 175°C; V
GE
= 20V
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November 14, 2014
IRGP6690DPbF/IRGP6690D-EPbF
300
250
200
ICE (A)
300
250
V GE = 18V
V GE = 15V
V GE = 12V
V GE = 10V
V GE = 8.0V
200
ICE (A)
150
100
50
0
0
2
4
6
150
100
50
0
V GE = 18V
V GE = 15V
V GE = 12V
V GE = 10V
V GE = 8.0V
8
10
0
2
4
6
8
10
V CE (V)
V CE (V)
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 20µs
300
250
200
ICE (A)
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 20µs
300
150
100
50
0
0
2
4
6
8
10
V CE (V)
IF (A)
V GE = 18V
V GE = 15V
V GE = 12V
V GE = 10V
V GE = 8.0V
250
200
150
100
50
0
0.0
1.0
175°C
25°C
-40°C
2.0
3.0
4.0
5.0
6.0
7.0
VF (V)
Fig. 8
- Typ. IGBT Output Characteristics
T
J
= 175°C; tp = 20µs
7
6
5
V CE (V)
Fig. 9
- Typ. Diode Forward Voltage Drop
Characteristics
7
6
ICE = 150A
V CE (V)
4
3
2
1
0
5
10
V GE (V)
ICE = 37A
ICE = 75A
5
4
3
2
1
0
ICE = 37A
ICE = 75A
ICE = 150A
15
20
5
10
V GE (V)
15
20
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= -40°C
4
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© 2014 International Rectifier
Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 25°C
Submit Datasheet Feedback
November 14, 2014
IRGP6690DPbF/IRGP6690D-EPbF
7
6
5
V CE (V)
300
ICE = 37A
ICE = 75A
ICE = 150A
250
200
ICE (A)
TJ = 25°C
TJ = 175°C
4
3
2
1
0
5
10
V GE (V)
15
20
150
100
50
0
2
4
6
8
10
12
14
16
V GE (V)
Fig. 12
- Typical V
CE
vs. V
GE
T
J
= 175°C
14
12
Fig. 13
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 20µs
1000
tdOFF
EON
8
6
4
2
0
0
20
40
60
80
IC (A)
100 120 140 160
EOFF
Swiching Time (ns)
10
Energy (mJ)
100
tF
tdON
tR
10
0
20
40
60
80
IC (A)
100 120 140 160
Fig. 14
- Typ. Energy Loss vs. I
C
T
J
= 175°C; L = 400µH; V
CE
= 400V, R
G
= 10Ω; V
GE
= 15V
12
10
EON
8
Energy (mJ)
Fig. 15
- Typ. Switching Time vs. I
C
T
J
= 175°C; L = 400µH; V
CE
= 400V, R
G
= 10Ω; V
GE
= 15V
10000
Swiching Time (ns)
6
4
2
0
0
20
40
60
EOFF
1000
tdOFF
tR
100
80
100
tdON
0
10
20
30
40
tF
50
Rg (
Ω
)
RG (
Ω
)
Fig. 16
- Typ. Energy Loss vs. R
G
T
J
= 175°C; L = 400µH; V
CE
= 400V, I
CE
= 75A; V
GE
= 15V
5
www.irf.com
© 2014 International Rectifier
Fig. 17
- Typ. Switching Time vs. R
G
T
J
= 175°C; L = 400µH; V
CE
= 400V, I
CE
= 75A; V
GE
= 15V
Submit Datasheet Feedback
November 14, 2014
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