StrongIRFET
IRFB7440PbF
Applications
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Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
HEXFET
®
Power MOSFET
D
G
S
V
DSS
R
DS(on)
typ.
max.
I
D
I
D (Package Limited)
D
40V
2.0m
Ω
2.5mΩ
172A
120A
c
Benefits
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Improved Gate, Avalanche and Dynamic dv/dt
Ruggedness
Fully Characterized Capacitance and Avalanche
SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
RoHS Compliant, Halogen-Free*
G
D
S
TO-220AB
IRFB7440PbF
G
D
S
Gate
Drain
Source
Base Part Number
IRFB7440PbF
Package Type
TO-220
Standard Pack
Form
Quantity
Tube
50
Complete Part Number
IRFB7440PbF
RDS(on), Drain-to -Source On Resistance (m
Ω)
7.0
ID = 100A
6.0
5.0
4.0
3.0
2.0
T J = 25°C
1.0
4
6
8
10
12
14
16
18
20
T J = 125°C
ID, Drain Current (A)
200
Limited By Package
150
100
50
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
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© 2015 International Rectifier
Fig 2.
Maximum Drain Current vs. Case Temperature
1
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February 19, 2015
IRFB7440PbF
Absolute Maximum Ratings
Symbol
Parameter
Max.
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
Pulsed Drain Current
122
172
120
772
143
0.95
± 20
-55 to + 175
A
d
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
W
W/°C
V
°C
10lbf in (1.1N m)
x
300
x
Avalanche Characteristics
E
AS (Thermally limited)
E
AS (Thermally limited)
I
AR
E
AR
Thermal Resistance
Symbol
R
θJC
R
θCS
R
θJA
e
Single Pulse Avalanche Energy
k
Avalanche Current
Ãd
Repetitive Avalanche Energy
d
Single Pulse Avalanche Energy
Junction-to-Case
161
387
See Fig. 14, 15, 22a, 22b
mJ
A
mJ
j
Parameter
Typ.
–––
0.50
–––
Max.
1.05
–––
62
Units
°C/W
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Max.
Units
Conditions
V
(BR)DSS
Δ
V
(BR)DSS
/
Δ
T
J
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
40
–––
–––
–––
2.2
–––
–––
–––
–––
–––
–––
0.035
2.0
3.0
3.0
–––
–––
–––
–––
2.6
–––
–––
2.5
–––
3.9
1.0
150
100
-100
–––
V
V/°C
m
Ω
m
Ω
V
μA
nA
Ω
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 5.0mA
V
GS
= 10V, I
D
= 100A
V
GS
= 6.0V, I
D
g
= 50A
g
d
V
DS
= V
GS
, I
D
= 100μA
V
DS
= 40V, V
GS
= 0V
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 120A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
(Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.032mH
R
G
= 50Ω, I
AS
= 100A, V
GS
=10V.
I
SD
≤
100A, di/dt
≤
1330A/μs, V
DD
≤
V
(BR)DSS
, T
J
≤
175°C.
Pulse width
≤
400μs; duty cycle
≤
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
R
θ
is measured at T
J
approximately 90°C.
Limited by T
Jmax
, starting T
J
= 25°C, L = 1mH, R
G
= 50Ω, I
AS
= 28A,
V
GS
=10V.
*
Halogen -Free since April 30, 2014
2
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© 2015 International Rectifier
Submit Datasheet Feedback
February 19, 2015
IRFB7440PbF
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Max.
Units
Conditions
gfs
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
eff. (ER)
C
oss
eff. (TR)
Symbol
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q
g
- Q
gd
)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
88
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
90
23
32
58
24
68
115
68
4730
680
460
845
980
Typ.
–––
135
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Max.
S
nC
V
DS
= 10V, I
D
= 100A
I
D
= 100A
V
DS
=20V
V
GS
= 10V
g
ns
V
DD
= 20V
I
D
= 30A
R
G
= 2.7
Ω
V
GS
= 10V
g
i
= 0V to 32V
h
D
pF
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0 MHz
V
GS
= 0V, V
DS
V
GS
= 0V, V
DS
= 0V to 32V
Diode Characteristics
Parameter
Units
Conditions
I
S
I
SM
V
SD
dv/dt
t
rr
Q
rr
I
RRM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Peak Diode Recovery
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.9
6.8
24
28
17
20
1.3
172
772
1.3
–––
–––
–––
–––
–––
–––
A
A
V
V/ns
ns
nC
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
Ãd
S
f
T
J
= 25°C, I
S
= 100A, V
GS
= 0V
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
V
R
= 34V,
I
F
= 100A
di/dt = 100A/μs
g
T
J
= 175°C, I
S
= 100A, V
DS
= 40V
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
g
3
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© 2015 International Rectifier
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February 19, 2015
IRFB7440PbF
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
1
4.5V
10
4.5V
≤
60μs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
≤
60μs PULSE WIDTH
Tj = 175°C
1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 3.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 4.
Typical Output Characteristics
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
ID = 100A
VGS = 10V
ID, Drain-to-Source Current (A)
100
T J = 175°C
10
T J = 25°C
VDS = 10V
≤
60μs PULSE WIDTH
1.0
3
4
5
6
7
8
9
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 5.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 6.
Normalized On-Resistance vs. Temperature
14.0
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
ID= 100A
VDS= 32V
VDS= 20V
C, Capacitance (pF)
10000
Ciss
Coss
1000
Crss
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0
20
40
60
80
100
120
QG, Total Gate Charge (nC)
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
4
Fig 8.
Typical Gate Charge vs. Gate-to-Source Voltage
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IRFB7440PbF
1000
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
T J = 175°C
1000
100μsec
100
1msec
10
T J = 25°C
1
VGS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
2.5
VSD, Source-to-Drain Voltage (V)
10
Limited by package
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10msec
DC
10
100
0.1
VDS, Drain-to-Source Voltage (V)
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig 9.
Typical Source-Drain Diode
Forward Voltage
50
49
48
47
46
45
44
43
42
41
40
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Temperature ( °C )
Id = 5.0mA
Fig 10.
Maximum Safe Operating Area
0.8
VDS= 0V to 32V
0.6
Energy (μJ)
0.4
0.2
0.0
0
5
10
15
20
25
30
35
40
45
Fig 11.
Drain-to-Source Breakdown Voltage
RDS(on), Drain-to -Source On Resistance ( mΩ)
VDS, Drain-to-Source Voltage (V)
Fig 12.
Typical C
OSS
Stored Energy
VGS = 5.5V
VGS = 6.0V
40
30
VGS = 7.0V
VGS = 8.0V
VGS =10V
20
10
0
0
100 200 300 400 500 600 700 800
ID, Drain Current (A)
Fig 13.
Typical On-Resistance vs. Drain Current
5
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© 2015 International Rectifier
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February 19, 2015
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