FastIRFET™
IRFH4255DPbF
HEXFET
®
Power MOSFET
Q1
V
DSS
R
DS(on)
max
(@V
GS
= 4.5V)
Qg
(typical)
I
D
(@T
C
= 25°C)
25
4.60
10
30
Q2
25
2.10
23
30
V
m
nC
A
Applications
Control and Synchronous MOSFETs for synchronous buck
converters
DUAL PQFN 5X6 mm
Features
Control and synchronous MOSFETs in one package
Low charge control MOSFET (10nC typical)
Low R
DSON
synchronous MOSFET (<2.10m)
Intrinsic Schottky Diode with Low Forward Voltage on Q2
RoHS Compliant, Halogen-Free
MSL1, Industrial Qualification
Base part number
IRFH4255DPbF
Dual PQFN 5mm x 6mm
Package Type
Benefits
Increased power density
Lower switching losses
results in Lower conduction losses
Lower Switching Losses
Environmentally friendlier
Increased reliability
Orderable Part Number
IRFH4255DTRPbF
Q1 Max.
Q2 Max.
± 20
64
105
51
84
30
120
31
20
0.25
30
420
38
24
0.30
W
W/°C
°C
Q2 Max.
3.3
12
31
19
Units
°C/W
Units
V
Standard Pack
Form
Quantity
Tape and Reel
4000
Absolute Maximum Ratings
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 70°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 70°C
T
J
T
STG
Thermal Resistance
Parameter
R
JC
(Bottom) Junction-to-Case
Junction-to-Case
R
JC
(Top)
Junction-to-Ambient
R
JA
Junction-to-Ambient
R
JA
(<10s)
Notes
through
are on page 12
1
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© 2014 International Rectifier
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Parameter
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
(Source Bonding Technology Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Q1 Max.
4.0
20
34
24
A
-55 to + 150
April 14, 2014
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
Drain-to-Source Breakdown Voltage
BV
DSS
/T
J
Breakdown Voltage Temp. Coefficient
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Min. Typ.
25
–––
25
–––
–––
22
–––
23
––– 2.50
––– 1.20
––– 3.70
––– 1.65
1.1
1.6
1.1
1.6
––– -5.7
––– -5.3
––– –––
––– –––
––– –––
––– –––
––– –––
––– –––
131 –––
182 –––
–––
10
–––
23
–––
2.5
–––
4.5
–––
1.6
–––
2.3
–––
3.8
–––
8.4
–––
2.1
–––
7.8
–––
5.4
––– 10.7
–––
10
–––
23
–––
2.4
–––
1.5
–––
10
–––
10
–––
61
–––
43
–––
13
–––
27
–––
15
–––
26
––– 1314
––– 2877
––– 365
––– 907
–––
92
––– 234
IRFH4255DPbF
Max. Units
Conditions
–––
V
GS
= 0V, I
D
= 250µA
V
–––
V
GS
= 0V, I
D
= 1.0mA
–––
Reference to 25°C, I
D
= 1.0mA
mV/°C
–––
Reference to 25°C, I
D
= 10mA
3.20
V
GS
= 10V, I
D
= 30A
1.50
V
GS
= 10V, I
D
= 30A
m
4.60
V
GS
= 4.5V, I
D
= 30A
2.10
V
GS
= 4.5V, I
D
= 30A
2.1
Q1: V
DS
= V
GS
, I
D
= 35µA
V
2.1
Q2: V
DS
= V
GS
, I
D
= 100µA
–––
Q1: V
DS
= V
GS
, I
D
= 35µA
mV/°C
–––
Q2: V
DS
= V
GS
, I
D
= 1mA
1.0
V = 20V, V
GS
= 0V
µA
DS
250
V
DS
= 20V, V
GS
= 0V
100
V
GS
= 20V
100
V
GS
= 20V
nA
-100
V
GS
= -20V
-100
V
GS
= -20V
–––
V
DS
= 10V, I
D
= 30A
S
–––
V
DS
= 10V, I
D
= 30A
15
35
Q1
–––
V
DS
= 13V
–––
V
GS
= 4.5V, I
D
= 30A
–––
–––
nC
Q2
–––
V
DS
= 13V
–––
V
GS
= 4.5V, I
D
= 30A
–––
–––
–––
–––
–––
V
DS
= 16V, V
GS
= 0V
nC
–––
–––
–––
–––
Q1
V
DS
= 13V V
GS
= 4.5V
–––
–––
I
D
= 30A, Rg = 1.8
–––
ns
Q2
–––
V
DS
= 13V V
GS
= 4.5V
–––
–––
I
D
= 30A, Rg = 1.8
–––
–––
V
GS
= 0V
–––
V
DS
= 13V
–––
pF
ƒ = 1.0MHz
–––
–––
–––
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
V
GS(th)
/T
J
Gate Threshold Voltage Coefficient
I
DSS
I
GSS
Gate-to-Source Reverse Leakage
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
2
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© 2014 International Rectifier
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April 14, 2014
IRFH4255DPbF
Typ.
–––
Q1 Max.
61
Q2 Max.
364
Units
mJ
Avalanche Characteristics
E
AS
Parameter
Single Pulse Avalanche Energy
Diode Characteristics
Parameter
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Q
rr
Reverse Recovery Time
Reverse Recovery Charge
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
–––
–––
16
26
13
34
Max. Units
Conditions
30
A MOSFET symbol
30
showing the
120
A integral reverse
p-n junction diode.
420
1.0
V T
J
= 25°C, I
S
= 30A, V
GS
= 0V
0.75
T
J
= 25°C, I
S
= 30A, V
GS
= 0V
–––
ns Q1 T
J
= 25°C, I
F
= 30A
–––
V
DD
= 13V, di/dt = 235A/µs
––– nC Q2 T
J
= 25°C, I
F
= 30A
V
DD
= 13V, di/dt = 270A/µs
–––
3
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© 2014 International Rectifier
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April 14, 2014
Q1 - Control FET
1000
TOP
VGS
10V
5.0V
4.5V
3.5V
3.1V
2.9V
2.7V
2.5V
IRFH4255DPbF
Q2 - Synchronous FET
1000
TOP
VGS
10V
5.0V
4.5V
3.5V
3.1V
2.9V
2.7V
2.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
2.5V
1
2.5V
0.1
0.1
1
60µs PULSE WIDTH
Tj = 25°C
60µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
10
100
V DS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
TOP
VGS
10V
5.0V
4.5V
3.5V
3.1V
2.9V
2.7V
2.5V
Fig 2.
Typical Output Characteristics
1000
TOP
VGS
10V
5.0V
4.5V
3.5V
3.1V
2.9V
2.7V
2.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
100
10
2.5V
1
0.1
1
60µs PULSE WIDTH
Tj = 150°C
10
2.5V
60µs
PULSE WIDTH
Tj = 150°C
10
100
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 3.
Typical Output Characteristics
1000
1000
Fig 4.
Typical Output Characteristics
ID, Drain-to-Source Current (A)
100
T J = 150°C
10
T J = 25°C
1
VDS = 15V
60µs
PULSE WIDTH
0.1
1.5
2.0
2.5
3.0
3.5
4.0
ID, Drain-to-Source Current(A)
100
10
TJ = 150°C
TJ = 25°C
VDS = 15V
60µs
PULSE WIDTH
1.0
1
2
3
4
VGS, Gate-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Fig 5.
Typical Transfer Characteristics
4
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© 2014 International Rectifier
Fig 6.
Typical Transfer Characteristics
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April 14, 2014
Q1 - Control FET
100000
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
IRFH4255DPbF
IRFH4255DPbF
Q2 - Synchronous FET
100000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
10000
C, Capacitance (pF)
C, Capacitance (pF)
10000
Ciss
1000
Ciss
Coss
Crss
Coss
1000
Crss
100
10
1
10
VDS, Drain-to-Source Voltage (V)
100
100
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
14.0
ID= 30A
VGS, Gate-to-Source Voltage (V)
Fig 8.
Typical Capacitance vs. Drain-to-Source Voltage
14.0
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
0
5
VDS= 20V
VDS= 13V
12.0
10.0
8.0
6.0
4.0
2.0
0.0
ID= 30A
VDS = 20V
VDS= 13V
10
15
20
25
30
0
10
20
30
40
50
60
QG, Total Gate Charge (nC)
QG, Total Gate Charge (nC)
Fig 9.
Typical Gate Charge vs. Gate-to-Source Voltage
1000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY RDS(on)
Fig 10.
Typical Gate Charge vs. Gate-to-Source Voltage
1000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA LIMITED BY R
DS
(on)
100
100µsec
10
Limited by package
100
100µsec
10
Limited by Package
1msec
1
1msec
10msec
1
10msec
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
DC
0.1
0.01
100
VDS , Drain-to-Source Voltage (V)
Tc = 25°C
Tj = 150°C
Single Pulse
DC
0.01
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 11.
Maximum Safe Operating Area
5
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© 2014 International Rectifier
Fig 12.
Maximum Safe Operating Area
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April 14, 2014
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