ResonantSoft-SwitchingSeries
ReverseconductingIGBTwithmonolithicbodyDiodeforsoft-switching
IHW15N120E1
Datasheet
IndustrialPowerControl
IHW15N120E1
ResonantSoft-SwitchingSeries
ReverseconductingIGBTwithmonolithicbodydiode
Features:
•Powerfulmonolithicbodydiodewithlowforwardvoltage
designedforsoftcommutationonly
•TRENCHSTOP
TM
technologyapplicationsoffers:
-verytightparameterdistribution
-highruggedness,temperaturestablebehavior
-lowV
CEsat
-easyparallelswitchingcapabilityduetopositive
temperaturecoefficientinV
CEsat
•LowEMI
•QualifiedaccordingtoJEDECfortargetapplications
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
Applications:
•Inductivecooking
•Inverterizedmicrowaveovens
•Resonantconverters
•Softswitchingapplications
C
G
E
G
C
E
KeyPerformanceandPackageParameters
Type
IHW15N120E1
V
CE
1200V
I
C
15A
V
CEsat
,T
vj
=25°C
1.5V
T
vjmax
150°C
Marking
H15ME1
Package
PG-TO247-3
2
Rev.2.1,2016-07-29
IHW15N120E1
ResonantSoft-SwitchingSeries
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
3
Rev.2.1,2016-07-29
IHW15N120E1
ResonantSoft-SwitchingSeries
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter
Collector-emittervoltage,T
vj
≥25°C
DCcollectorcurrent,limitedbyT
vjmax
T
C
=25°C
T
C
=100°C
Pulsedcollectorcurrent,t
p
limitedbyT
vjmax
TurnoffsafeoperatingareaV
CE
≤1200V,T
vj
≤150°C
1)
Diodeforwardcurrent,limitedbyT
vjmax
T
C
=25°C
T
C
=100°C
Diodepulsedcurrent,t
p
limitedbyT
vjmax
Gate-emitter voltage
TransientGate-emittervoltage(t
p
≤10µs,D<0.010)
PowerdissipationT
C
=25°C
PowerdissipationT
C
=100°C
Operating junction temperature
Storage temperature
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
Mounting torque, M3 screw
Maximum of mounting processes: 3
ThermalResistance
Parameter
R
th
Characteristics
IGBT thermal resistance,
junction - case
Diode thermal resistance,
junction - case
Thermal resistance
junction - ambient
R
th(j-c)
R
th(j-c)
R
th(j-a)
Symbol Conditions
Symbol
V
CE
I
C
I
Cpuls
-
I
F
I
Fpuls
V
GE
P
tot
T
vj
T
stg
Value
1200
30.0
15.0
45.0
45.0
30.0
15.0
45.0
±20
±25
156.0
62.2
-40...+150
-55...+150
260
Unit
V
A
A
A
A
A
V
W
°C
°C
°C
Nm
M
0.6
Value
min.
typ.
max.
Unit
-
-
-
-
-
-
0.80
0.80
40
K/W
K/W
K/W
1)
dV/dt < 1kV/µs
4
Rev.2.1,2016-07-29
IHW15N120E1
ResonantSoft-SwitchingSeries
ElectricalCharacteristic,atT
vj
=25°C,unlessotherwisespecified
Parameter
StaticCharacteristic
Collector-emitter breakdown voltage
V
(BR)CES
V
GE
=0V,I
C
=0.50mA
Collector-emitter saturation voltage
V
CEsat
V
GE
=15.0V,I
C
=15.0A
T
vj
=25°C
T
vj
=100°C
T
vj
=150°C
V
GE
=0V,I
F
=15.0A
T
vj
=25°C
T
vj
=100°C
T
vj
=150°C
I
C
=0.50mA,V
CE
=V
GE
V
CE
=1200V,V
GE
=0V
T
vj
=25°C
T
vj
=150°C
V
CE
=0V,V
GE
=20V
V
CE
=20V,I
C
=15.0A
1200
-
-
-
-
-
-
4.0
-
-
-
-
-
1.50
1.65
1.75
1.90
2.15
2.35
5.8
-
300
-
14.0
6.8
-
2.00
-
-
2.50
-
-
8.0
100
-
100
-
V
V
Symbol Conditions
Value
min.
typ.
max.
Unit
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
V
F
V
GE(th)
I
CES
I
GES
g
fs
r
G
V
V
µA
nA
S
Ω
ElectricalCharacteristic,atT
vj
=25°C,unlessotherwisespecified
Parameter
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from
case
C
ies
C
oes
C
res
Q
G
L
E
V
CC
=960V,I
C
=15.0A,
V
GE
=15V
V
CE
=25V,V
GE
=0V,f=1MHz
-
-
-
-
-
810
24
20
90.0
13.0
-
-
-
-
-
nC
nH
pF
Symbol Conditions
Value
min.
typ.
max.
Unit
SwitchingCharacteristic,InductiveLoad
Parameter
IGBTCharacteristic,atT
vj
=25°C
Turn-off delay time
Fall time
t
d(off)
t
f
T
vj
=25°C,
V
CC
=65V,I
C
=15.0A,
V
GE
=0.0/18.0V,
R
G(off)
=10.2Ω
Energy losses include “tail”
according Figure B. (Test circuit
FigureE,C
r
=300nF).
dv/dt=50.0V/µs
-
-
130
1000
-
-
ns
ns
Symbol Conditions
Value
min.
typ.
max.
Unit
Turn-off energy, soft switching
E
off
-
0.03
-
mJ
5
Rev.2.1,2016-07-29
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