IRFH5020PbF
HEXFET
®
Power MOSFET
V
DS
R
DS(on) max
(@V
GS
= 10V)
200
55
36
1.9
34
V
mΩ
nC
Ω
A
PQFN 5X6 mm
Q
g (typical)
R
G (typical)
I
D
(@T
c(Bottom)
= 25°C)
Applications
•
Secondary Side Synchronous Rectification
•
Inverters for DC Motors
•
DC-DC Brick Applications
•
Boost Converters
Features and Benefits
Features
Low R
DSon
Low Thermal Resistance to PCB (≤ 0.8°C/W)
100% Rg tested
Low Profile (≤ 0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Benefits
Lower Conduction Losses
Enable better thermal dissipation
Increased Reliability
results in Increased Power Density
⇒
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFH5020TRPbF
IRFH5020TR2PbF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice #259
Absolute Maximum Ratings
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C(Bottom)
= 25°C
I
D
@ T
C(Bottom)
= 100°C
I
D
@ T
C(Top)
= 25°C
I
D
@ T
C(Top)
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@ T
C(Top)
= 25°C
T
J
T
STG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Max.
200
± 20
5.1
4.1
34
21
7.8
4.9
63
3.6
8.3
0.07
-55 to + 150
Units
V
A
g
f
c
W
W/°C
°C
Linear Derating Factor
Operating Junction and
Storage Temperature Range
f
Notes
through
are on page 9
1
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IRFH5020PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
ΔΒV
DSS
/ΔT
J
R
DS(on)
V
GS(th)
ΔV
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
200
–––
–––
3.0
–––
–––
–––
–––
–––
18
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.22
47
–––
-12
–––
–––
–––
–––
–––
36
8.6
2.1
11
14
13
13
1.9
9.3
7.7
21
6.0
2290
120
33
Max.
–––
–––
55
5.0
–––
20
1.0
100
-100
–––
54
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
ns
nC
Ω
V
DD
= 100V, V
GS
= 10V
I
D
= 7.5A
R
G
=1.8Ω
See Fig.15
V
GS
= 0V
V
DS
= 100V
ƒ = 1.0MHz
V
DS
= 16V, V
GS
= 0V
nC
V
DS
= 100V
V
GS
= 10V
I
D
= 7.5A
See Fig.17 & 18
Units
V
V/°C
mΩ
V
mV/°C
μA
mA
nA
S
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 7.5A
e
V
DS
= V
GS
, I
D
= 150μA
V
DS
= 200V, V
GS
= 0V
V
DS
= 200V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 50V, I
D
= 7.5A
Avalanche Characteristics
E
AS
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
d
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
45
459
Typ.
–––
–––
Max.
320
7.5
Units
mJ
A
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Max.
7.5
A
63
1.3
68
689
V
ns
nC
Units
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 7.5A, V
GS
= 0V
di/dt = 500A/μs
G
S
Conditions
MOSFET symbol
D
Ã
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
e
T
J
= 25°C, I
F
= 7.5A, V
DD
= 100V
eÃ
Time is dominated by parasitic Inductance
Thermal Resistance
Parameter
R
θJC
(Bottom)
R
θJC
(Top)
R
θJA
R
θJA
(<10s)
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
f
g
g
Typ.
0.5
–––
–––
–––
Max.
0.8
15
35
21
Units
°C/W
2
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IRFH5020PbF
1000
TOP
1000
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
10
BOTTOM
VGS
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.8V
4.5V
TOP
100
BOTTOM
VGS
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.8V
4.5V
1
10
0.1
4.5V
1
0.01
4.5V
≤
60μs PULSE WIDTH
Tj = 25°C
≤
60μs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
0.001
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
100
Fig 2.
Typical Output Characteristics
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
10
2.0
ID = 7.5A
VGS = 10V
TJ = 150°C
1
1.5
TJ = 25°C
0.1
1.0
VDS = 50V
≤
60μs PULSE WIDTH
0.01
3.0
4.0
5.0
6.0
7.0
0.5
0.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Fig 4.
Normalized On-Resistance Vs. Temperature
16
VGS, Gate-to-Source Voltage (V)
ID= 7.5A
12
C, Capacitance (pF)
10000
VDS = 160V
VDS = 100V
VDS = 40V
Ciss
1000
8
Coss
100
4
Crss
10
1
10
100
1000
0
0
10
20
30
40
50
QG Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance Vs.Drain-to-Source Voltage
3
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Fig 6.
Typical Gate Charge Vs.Gate-to-Source Voltage
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IRFH5020PbF
100
1000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY RDS(on)
ISD , Reverse Drain Current (A)
100
10
TJ = 150°C
10
1msec
10msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
100
1000
100μsec
1
TJ = 25°C
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
VSD , Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
8
6.0
Fig 8.
Maximum Safe Operating Area
ID , Drain Current (A)
6
VGS(th) Gate threshold Voltage (V)
5.0
ID = 1.0A
ID = 1.0mA
ID = 500μA
ID = 150μA
4
4.0
2
3.0
0
25
50
75
100
125
150
2.0
-75
-50
-25
0
25
50
75
100
125
150
TA , Ambient Temperature (°C)
TJ , Temperature ( °C )
Fig 9.
Maximum Drain Current Vs.
Case (Top) Temperature
100
Fig 10.
Threshold Voltage Vs. Temperature
Thermal Response ( ZthJC )
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
1
0.1
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
1
10
100
0.001
1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case (Top)
4
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May 19, 2015
IRFH5020PbF
(
RDS (on), Drain-to -Source On Resistance m
Ω)
160
1400
1200
1000
800
600
400
200
0
25
50
75
100
125
150
ID = 7.5A
EAS, Single Pulse Avalanche Energy (mJ)
120
I D
TOP
1.1A
1.6A
BOTTOM
7.5A
TJ = 125°C
80
TJ = 25°C
40
4
8
12
16
20
VGS, Gate-to-Source Voltage (V)
Starting TJ , Junction Temperature (°C)
Fig 12.
On-Resistance vs. Gate Voltage
Fig 13.
Maximum Avalanche Energy vs. Drain Current
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
ΔTj
= 125°C and
Tstart =25°C (Single Pulse)
Avalanche Current (A)
10
1
0.1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
ΔΤ
j = 25°C and
Tstart = 125°C.
0.01
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
1.0E-01
Fig 14.
Typical Avalanche Current vs. Pulsewidth
5
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2015 International Rectifier
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May 19, 2015
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