IRFHM8329PbF
V
DSS
V
GS
max
R
DS(on)
max
(@ V
GS
= 10V)
(@ V
GS
= 4.5V)
Qg
(typical)
I
D
(@T
C (Bottom)
= 25°C)
30
±20
6.1
8.8
13
24
nC
A
V
V
m
S
HEXFET
®
Power MOSFET
S
S
G
D
D
D
D
D
PQFN 3.3X3.3 mm
Applications
Charge and Discharge Switch for Notebook PC Battery Application
System/Load Switch
Synchronous MOSFET for Buck Converters
Features
Low Thermal Resistance to PCB (<3.8°C/W)
Low Profile (<1.05 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Consumer Qualification
Benefits
Enable better thermal dissipation
Increased Power Density
results in Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
IRFHM8329PbF
Package Type
PQFN 3.3 mm x 3.3 mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFHM8329TRPbF
Absolute Maximum Ratings
Parameter
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C(Bottom)
= 25°C
I
D
@ T
C(Bottom)
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C(Bottom)
= 25°C
T
J
T
STG
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V (Source Bonding
Technology Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
± 20
16
13
Units
V
57
36
24
230
2.6
33
0.021
-55 to + 150
W
W/°C
°C
A
Notes
through
are on page 9
1
2016-2-23
IRFHM8329PbF
Min.
30
–––
–––
–––
1.2
–––
–––
–––
–––
–––
56
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
21
4.8
6.8
1.7
-6.0
–––
–––
–––
–––
–––
26
13
2.9
2.0
4.6
3.5
6.6
7.8
1.4
14
74
14
14
1710
360
180
Max.
–––
–––
6.1
8.8
2.2
–––
1.0
150
100
-100
–––
–––
20
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
Units
Conditions
V
V
GS
= 0V, I
D
= 250µA
mV/°C Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 20A
m
V
GS
= 4.5V, I
D
= 16A
V
V = V
GS
, I
D
= 25µA
mV/°C
DS
V
DS
= 24V, V
GS
= 0V
µA
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
nA
V
GS
= -20V
S
V
DS
= 10V, I
D
= 20A
nC V
GS
= 10V, V
DS
= 15V, I
D
= 20A
nC
nC
ns
pF
V
DS
= 15V
V
GS
= 4.5V
I
D
= 20A
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
BV
DSS
Breakdown Voltage Temp. Coefficient
BV
DSS
/T
J
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
V
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Single Pulse Avalanche Energy
Avalanche Current
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
I
D
= 20A
R
G
=1.8
V
GS
= 0V
V
DS
= 10V
ƒ = 1.0MHz
Max.
43
20
Units
mJ
A
Avalanche Characteristics
E
AS
I
AR
Diode Characteristics
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
V
SD
Diode Forward Voltage
Reverse Recovery Time
t
rr
Q
rr
Reverse Recovery Charge
Thermal Resistance
Parameter
R
JC
(Bottom) Junction-to-Case
Junction-to-Case
R
JC
(Top)
R
JA
R
JA
(<10s)
Junction-to-Ambient
Junction-to-Ambient
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
13
8.1
Conditions
MOSFET symbol
24
showing the
A
integral reverse
230
p-n junction diode.
1.0
V T
J
= 25°C, I
S
= 20A, V
GS
= 0V
20
ns T
J
= 25°C, I
F
= 20A, V
DD
= 15V
12
nC di/dt = 290A/µs
Typ.
–––
–––
–––
–––
Max.
3.8
42
47
32
D
G
S
Units
°C/W
2
2016-2-23
1000
TOP
VGS
10V
7.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
IRFHM8329PbF
1000
TOP
VGS
10V
7.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
2.5V
1
2.5V
60µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
60µs PULSE WIDTH
Tj = 150°C
1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 2.
Typical Output Characteristics
1.8
ID = 20A
1.6
1.4
1.2
1.0
0.8
0.6
VGS = 10V
ID, Drain-to-Source Current (A)
100
T J = 150°C
10
T J = 25°C
VDS = 10V
60µs
PULSE WIDTH
1.0
2
3
4
5
6
7
-60 -40 -20 0
20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
10000
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
Fig 4.
Normalized On-Resistance vs. Temperature
14
VGS, Gate-to-Source Voltage (V)
12
10
8
6
4
2
0
ID= 20A
VDS= 24V
VDS= 15V
VDS= 6V
C, Capacitance (pF)
Ciss
1000
Coss
Crss
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0
10
20
30
40
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
3
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
2016-2-23
1000
IRFHM8329PbF
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ISD, Reverse Drain Current (A)
ID, Drain-to-Source Current (A)
100
TJ = 150°C
10
TJ = 25°C
1
VGS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
VSD , Source-to-Drain Voltage (V)
100
100µsec
1msec
Limited by Package
10
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0.1
1
10msec
DC
10
100
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
60
50
ID , Drain Current (A)
VGS(th) , Gate threshold Voltage (V)
Fig 8.
Maximum Safe Operating Area
2.6
Limited by source
bonding technology
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
ID = 25µA
ID = 250µA
40
30
20
10
0
25
50
75
100
125
150
TC , Case Temperature (°C)
ID = 1.0mA
ID = 1.0A
Fig 9.
Maximum Drain Current vs. Case Temperature
10
Fig 10.
Drain-to–Source Breakdown Voltage
Thermal Response ( Z thJC )
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
0.001
1E-006
1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
2016-2-23
RDS(on), Drain-to -Source On Resistance ( m
)
25
IRFHM8329PbF
180
ID = 20A
20
EAS , Single Pulse Avalanche Energy (mJ)
160
140
120
100
80
60
40
20
0
25
50
75
ID
TOP
4.0A
8.6A
BOTTOM 20A
15
10
T J = 125°C
5
T J = 25°C
0
0.0
4.0
8.0
12.0
16.0
20.0
VGS, Gate-to-Source Voltage (V)
100
125
150
Starting T J , Junction Temperature (°C)
Fig 12.
On– Resistance vs. Gate Voltage
Fig 13.
Maximum Avalanche Energy vs. Drain Current
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj
= 150°C and
Tstart =25°C (Single Pulse)
Avalanche Current (A)
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
j = 25°C and
Tstart = 150°C. (Single Pulse)
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
1.0E-01
Fig 14.
Typical Avalanche Current vs. Pulsewidth
5
2016-2-23
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