IRLML0100PbF-1
HEXFET
®
Power MOSFET
V
DS
R
DS(on) max
(@V
GS
= 10V)
100
220
2.5
1.6
V
mΩ
nC
A
S
2
G 1
3 D
Q
g (typical)
I
D
(@T
A
= 25°C)
Micro3
TM
(SOT-23)
Features
Industry-standard pinout SOT-23 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
⇒
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number
IRLML0100TRPbF-1
Package Type
Micro3
™
(SOT-23)
Standard Pack
Form
Quantity
Tape and Reel
3000
Orderable Part Number
IRLML0100TRPbF-1
Absolute Maximum Ratings
Symbol
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
T
J,
T
STG
Parameter
Drain-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
100
1.6
1.3
7.0
1.3
0.8
0.01
± 16
-55 to + 150
Units
V
A
W
W/°C
V
°C
Thermal Resistance
Symbol
R
θJA
R
θJA
Parameter
Junction-to-Ambient
e
Typ.
–––
–––
Max.
100
99
Units
°C/W
Junction-to-Ambient (t<10s)
f
1
www.irf.com
©
2014 International Rectifier
Submit Datasheet Feedback
October 27, 2014
IRLML0100PbF-1
Electric Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
100
–––
–––
–––
1.0
–––
–––
–––
–––
–––
5.7
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.10
190
178
–––
–––
–––
–––
–––
1.3
–––
2.5
0.5
1.2
2.2
2.1
9.0
3.6
290
27
13
–––
–––
235
220
2.5
20
250
100
-100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
ns
nC
V
Conditions
V
GS
= 0V, I
D
= 250μA
V
GS
= 4.5V, I
D
= 1.3A
V
GS
= 10V, I
D
V
DS
= V
GS
, I
D
= 25μA
V
DS
=100V, V
GS
= 0V
V
DS
= 100V, V
GS
= 0V, T
J
= 125°C
V
GS
= 16V
V
GS
= -16V
V
DS
= 50V, I
D
= 1.6A
I
D
= 1.6A
V
DS
=50V
V
DD
V
GS
= 4.5V
I
D
= 1.0A
R
G
= 6.8Ω
V
GS
= 4.5V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
ΔV
(BR)DSS
/ΔT
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G
gfs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V/°C Reference to 25°C, I
D
= 1mA
mΩ
V
μA
nA
Ω
S
d
= 1.6A
d
d
=50V
d
Source - Drain Ratings and Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
20
13
1.1
A
7.0
1.3
30
20
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 1.1A, V
GS
= 0V
T
J
= 25°C, V
R
= 50V, I
F
=1.1A
di/dt = 100A/μs
Ã
d
d
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
≤
400μs; duty cycle
≤
2%.
Surface mounted on 1 in square Cu board
Refer to
application note #AN-994.
2
www.irf.com
©
2014 International Rectifier
Submit Datasheet Feedback
October 27, 2014
IRLML0100PbF-1
100
≤60μs
PULSE WIDTH
Tj = 25°C
ID, Drain-to-Source Current (A)
TOP
VGS
10.0V
4.50V
3.50V
3.30V
3.25V
2.50V
2.35V
2.25V
100
≤60μs
PULSE WIDTH
Tj = 150°C
ID, Drain-to-Source Current (A)
TOP
VGS
10.0V
4.50V
3.50V
3.30V
3.25V
2.50V
2.35V
2.25V
10
BOTTOM
10
BOTTOM
1
1
2.25V
0.1
2.25V
0.01
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
10
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current(A)
ID = 1.6A
VGS = 10V
2.0
1
TJ = 150°C
1.5
0.1
TJ = 25°C
1.0
0.01
1.5
2.0
VDS = 50V
≤60μs
PULSE WIDTH
2.5
3.0
3.5
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
3
www.irf.com
©
2014 International Rectifier
Fig 4.
Normalized On-Resistance
Vs. Temperature
Submit Datasheet Feedback
October 27, 2014
IRLML0100PbF-1
10000
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
16
ID= 1.6A
12
VDS= 80V
VDS= 50V
VDS= 20V
1000
C, Capacitance (pF)
Ciss
100
Coss
Crss
10
8
4
1
1
10
VDS , Drain-to-Source Voltage (V)
100
0
0
1
2
3
4
5
6
7
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
10
TJ = 150°C
1
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
ISD, Reverse Drain Current (A)
10
100μsec
1
1msec
0.1
TJ = 25°C
VGS = 0V
0.1
TA = 25°C
Tj = 150°C
Single Pulse
0.1
1
10msec
0.01
0.4
0.6
0.8
1.0
VSD , Source-to-Drain Voltage (V)
0.01
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
www.irf.com
©
2014 International Rectifier
Fig 8.
Maximum Safe Operating Area
Submit Datasheet Feedback
October 27, 2014
IRLML0100PbF-1
2.0
V
DS
V
GS
ID , Drain Current (A)
1.5
R
D
R
G
V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
D.U.T.
+
-
V
DD
1.0
0.5
Fig 10a.
Switching Time Test Circuit
V
DS
0.0
25
50
75
100
125
150
90%
TA , Ambient Temperature (°C)
Fig 9.
Maximum Drain Current Vs.
Ambient Temperature
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
1000
Thermal Response ( ZthJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
0.01
1
0.1
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Typical Effective Transient Thermal Impedance, Junction-to-Ambient
5
www.irf.com
©
2014 International Rectifier
Submit Datasheet Feedback
October 27, 2014
能源基础设施
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
