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BSZ065N06LS5

产品描述Infineon's new logic level OptiMOS™ 5 power MOSFETs are highly suitable for wireless charging, adapter and telecom applications. The new devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers.
产品类别半导体    分立半导体   
文件大小1MB,共11页
制造商Infineon(英飞凌)
官网地址http://www.infineon.com/
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BSZ065N06LS5概述

Infineon's new logic level OptiMOS™ 5 power MOSFETs are highly suitable for wireless charging, adapter and telecom applications. The new devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers.

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BSZ065N06LS5 BSZ065N06LS5ATMA1
描述 Infineon's new logic level OptiMOS™ 5 power MOSFETs are highly suitable for wireless charging, adapter and telecom applications. The new devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers. MV POWER MOS

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