StrongIRFET™
IRF7483MTRPbF
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
Benefits
Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dv/dt and di/dt Capability
Lead-Free, RoHS Compliant
DirectFET
®
N-Channel Power MOSFET
V
DSS
R
DS(on)
typ.
max
I
D (Silicon Limited)
S
D
G
S
S
D
S
40V
1.7m
2.3m
135A
DirectFET
®
ISOMETRIC
MF
Base part number
IRF7483MPbF
Package Type
DirectFET
®
MF
Standard Pack
Form
Tape and Reel
Quantity
4800
Orderable Part Number
IRF7483MTRPbF
)
RDS(on), Drain-to -Source On Resistance (m
6.5
ID = 81A
150
125
ID, Drain Current (A)
5.0
100
75
50
25
3.5
TJ = 125°C
2.0
0.5
4
6
8
10
12
TJ = 25°C
0
14
16
18
20
25
50
75
100
125
150
VGS, Gate -to -Source Voltage (V)
TC , Case Temperature (°C)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Fig 2.
Maximum Drain Current vs. Case Temperature
1
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Absolute Maximum Ratings
Symbol
Parameter
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Pulsed Drain Current
I
DM
P
D
@T
C
= 25°C Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
V
GS
Operating Junction and
T
J
Storage Temperature Range
T
STG
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy
E
AS (Thermally limited)
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
E
AS (tested)
I
AR
Avalanche Current
E
AR
Repetitive Avalanche Energy
Thermal Resistance
Symbol
Parameter
Junction-to-Ambient
R
JA
Junction-to-Ambient
R
JA
Junction-to-Ambient
R
JA
Junction-to-Case
R
JC
Junction-to-PCB Mounted
R
J-PCB
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
I
DSS
I
GSS
R
G
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
IRF7483MTRPbF
Max.
135
86
540
74
0.59
± 20
-55 to + 150
69
152
147
See Fig.15,16, 23a, 23b
Typ.
–––
12.5
20
–––
1.0
Max.
60
–––
–––
1.7
–––
Units
mJ
A
mJ
Units
A
W
W/°C
V
°C
°C/W
Min. Typ. Max. Units
Conditions
40
––– –––
V
V
GS
= 0V, I
D
= 250µA
–––
32
––– mV/°C Reference to 25°C, I
D
= 1.0mA
––– 1.7
2.3
V
GS
= 10V, I
D
= 81A
m
––– 3.4 –––
V
GS
= 6.0V, I
D
= 41A
2.2
3.0
3.9
V
V
DS
= V
GS
, I
D
= 100µA
––– ––– 1.0
V
DS
= 40V, V
GS
= 0V
µA
––– ––– 150
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
––– ––– 100
V
GS
= 20V
nA
––– ––– -100
V
GS
= -20V
––– 1.2 –––
TC measured with thermocouple mounted to top (Drain) of part.
Notes:
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Used double sided cooling , mounting pad with large heatsink.
Surface mounted on 1 in. square Cu
board (still air).
Mounted to a PCB with small clip
heatsink (still air)
Mounted on minimum footprint full size
board with metalized back and with
small clip heatsink (still air)
2
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May 14, 2015
IRF7483MTRPbF
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
125 ––– –––
S V
DS
= 10V, I
D
= 81A
Q
g
Total Gate Charge
–––
81
I
D
= 81A
Q
gs
Gate-to-Source Charge
–––
21
–––
V
DS
=20V
nC
Q
gd
Gate-to-Drain ("Miller") Charge
–––
28
–––
V
GS
= 10V
Q
sync
Total Gate Charge Sync. (Q
g
- Q
gd
)
–––
53
–––
I
D
= 81A, V
DS
=0V, V
GS
= 10V
t
d(on)
Turn-On Delay Time
–––
15
–––
V
DD
= 20V
t
r
Rise Time
–––
53
–––
I = 30A
ns
D
t
d(off)
Turn-Off Delay Time
–––
39
–––
R
G
= 2.7
t
f
Fall Time
–––
25
–––
V
GS
= 10V
C
iss
Input Capacitance
––– 3913 –––
V
GS
= 0V
C
oss
Output Capacitance
––– 642 –––
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
––– 431 –––
pF ƒ = 1.0MHz
C
oss
eff. (ER) Effective Output Capacitance (Energy Related) ––– 765 –––
V
GS
= 0V, V
DS
= 0V to 32V
C
oss
eff. (TR) Effective Output Capacitance (Time Related)
––– 932 –––
V
GS
= 0V, V
DS
= 0V to 32V
Diode Characteristics
Symbol
Parameter
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
V
SD
dv/dt
t
rr
Q
rr
I
RRM
Peak Diode Recovery
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– –––
74
showing the
A
integral reverse
––– –––
540
p-n junction diode.
––– ––– 1.2
V T
J
= 25°C,I
S
= 81A, V
GS
= 0V
D
G
S
–––
–––
–––
–––
–––
–––
2.4
38
39
42
46
1.9
–––
–––
–––
–––
–––
–––
V/ns
T
J
=150°C,I
S
= 81A,
V
DS
= 40V
T
J
= 25° C V
R
= 34V,
ns
T
J
= 125°C I
F
= 81A
T
J
= 25°C di/dt = 100A/µs
nC
T
J
= 125°C
A T
J
= 25°C
Notes:
Repetitive
rating; pulse width limited by max. junction
temperature.
Limited by T
J
max, starting T
J
= 25°C, L = 0.021mH
R
G
= 50, I
AS
= 81A, V
GS
=10V.
I
SD
≤
81A, di/dt
≤
839A/µs, V
DD
≤
V(
BR)DSS
, T
J
≤
150°C.
Pulse
width
≤
400µs; duty cycle
≤
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the
same charging time as C
oss
while V
DS
is rising from 0
to 80% V
DSS
.
oss
eff. (ER) is a fixed capacitance that gives the
C
same energy as C
oss
while V
DS
is rising from 0 to
80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10
Material). For recommended footprint and soldering
techniques refer to application note # AN-994.
http://www.irf.com/technical-info/appnotes/an-994.pdf
R
is measured at T
J
approximately 90°C.
This value determined from sample failure population,
starting T
J
= 25°C, L= 0.021mH, R
G
= 50, I
AS
= 81A,
V
GS
=10V.
Limited
by T
J
max, starting T
J
= 25°C, L = 1mH
R
G
= 50, I
AS
= 17A, V
GS
=10V.
3
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May 14, 2015
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
IRF7483MTRPbF
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
100
10
4.5V
4.5V
60µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
10
0.1
1
60µs
PULSE WIDTH
Tj = 150°C
10
100
VDS, Drain-to-Source Voltage (V)
Fig 3.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 4.
Typical Output Characteristics
2.0
ID = 81A
1.5
VGS = 10V
ID, Drain-to-Source Current(A)
100
TJ = 150°C
1.0
10
TJ = 25°C
0.5
VDS = 10V
1.0
2
3
4
5
6
60µs
PULSE WIDTH
7
8
0.0
-60 -40 -20 0
20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 5.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Fig 6.
Normalized On-Resistance vs. Temperature
14.0
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
ID= 81A
VDS = 32V
VDS = 20V
C, Capacitance (pF)
10000
Ciss
Crss
Coss
1000
100
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
0
20
40
60
80
100
QG, Total Gate Charge (nC)
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
4
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Fig 8.
Typical Gate Charge vs. Gate-to-Source Voltage
Submit Datasheet Feedback
May 14, 2015
1000
IRF7483MTRPbF
10000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ISD, Reverse Drain Current (A)
1000
100
10
1
0.1
0.01
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
100
DC
10msec
100µsec
100
TJ = 150°C
10
TJ = 25°C
1
VGS = 0V
0.1
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VSD , Source-to-Drain Voltage (V)
1msec
VDS , Drain-to-Source Voltage (V)
Fig 9.
Typical Source-Drain Diode Forward Voltage
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
Fig 10.
Maximum Safe Operating Area
0.6
48
47
46
45
44
43
42
41
40
39
-60 -40 -20 0
20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
Energy (µJ)
Id = 1.0mA
0.5
0.4
0.3
0.2
0.1
0.0
-5
0
5
10 15 20 25 30 35 40 45
VDS, Drain-to-Source Voltage (V)
Fig 11.
Drain-to-Source Breakdown Voltage
m
RDS (on), Drain-to -Source On Resistance (
)
Fig 12.
Typical C
oss
Stored Energy
10
9
8
7
6
5
4
3
2
1
0
0
25
50
75
100 125 150 175 200
ID, Drain Current (A)
VGS = 5.5V
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS = 10V
Fig 13.
Typical On-Resistance vs. Drain Current
5
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May 14, 2015
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