SK52B - SK515B
Taiwan Semiconductor
5A, 20V - 150V Surface Mount Schottky Barrier Rectifier
FEATURES
●
●
●
●
●
Low power loss, high efficiency
Ideal for automated placement
Guard ring for over-voltage protection
High surge current capability
Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
I
F(AV)
V
RRM
I
FSM
Package
Configuration
VALUE
5
20 - 150
120
UNIT
A
V
A
DO-214AA (SMB)
Single Die
APPLICATIONS
●
●
●
●
Switching mode power supply (SMPS)
Adapters
Lighting application
Converter
MECHANICAL DATA
●
●
●
●
●
●
●
●
●
Case: DO-214AA (SMB)
Molding compound meets UL 94V-0 flammability rating
Moisture sensitivity level: level 1, per J-STD-020
Packing code with suffix "G" means green compound
(halogen-free)
Part no. with suffix “H” means AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 2 whisker test
Polarity: As marked
Weight: 0.1 g (approximately)
DO-214AA (SMB)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Marking code on the device
Repetitive peak reverse voltage
Reverse voltage, total rms value
Maximum DC blocking voltage
Forward current
Surge peak forward current, 8.3 ms
single half sine-wave superimposed
on rated load per diode
Critical rate of rise of off-state voltage
Junction temperature
Storage temperature
V
RRM
V
R(RMS)
V
DC
I
F(AV)
I
FSM
dV/dt
T
J
T
STG
SYMBOL
SK
52B
SK
52B
20
14
20
SK
53B
SK
53B
30
21
30
SK
54B
SK
54B
40
28
40
SK
55B
SK
55B
50
35
50
5
120
10000
- 55 to +150
- 55 to +150
SK
56B
SK
56B
60
42
60
SK
59B
SK
59B
90
63
90
SK
SK
UNIT
510B 515B
SK
SK
510B 515B
100
150
V
70
105
V
100
150
V
A
A
V/μs
°C
°C
1
Version:O1705
SK52B - SK515B
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to-lead thermal resistance
Junction-to-ambient thermal resistance
SYMBOL
R
ӨJL
R
ӨJA
LIMIT
19
60
UNIT
°C/W
°C/W
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
SK52B
SK53B
SK54B
Forward voltage per diode
(1)
CONDITIONS
SYMBOL
TYP
-
MAX
0.55
UNIT
V
V
V
V
V
V
V
V
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
SK55B
SK56B
SK59B
SK510B
SK515B
SK52B
SK53B
SK54B
SK55B
SK56B
SK59B
SK510B
SK515B
SK52B
SK53B
SK54B
I
F
= 5A,T
J
= 25°C
V
F
-
-
-
0.75
0.85
0.95
-
T
J
= 25°C
I
R
0.5
Reverse current @ rated V
R
per
diode
(2)
-
0.1
-
20
Reverse current @ rated V
R
per
diode
(2)
SK55B
SK56B
SK59B
SK510B
SK515B
SK52B
SK53B
SK54B
T
J
= 100°C
I
R
-
10
-
-
-
-
Reverse current @ rated V
R
per
diode
(2)
SK55B
SK56B
SK59B
SK510B
SK515B
T
J
= 125°C
I
R
-
-
-
2
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
2
Version:O1705
SK52B - SK515B
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
SK5xxB
(Note 1)
PART NO.
SUFFIX
PACKING
CODE
R5
H
R4
M4
G
PACKING CODE
SUFFIX(*)
PACKAGE
SMB
SMB
SMB
PACKING
850 / 7" Plastic reel
3,000 / 13" Paper reel
3,000 / 13" Plastic reel
Note:
1. "x" defines voltage from 20V (SK52B) to 150V (SK515B)
*: Optional available
EXAMPLE P/N
EXAMPLE P/N
SK56BHR5G
PART NO.
SK56B
PART NO.
SUFFIX
H
PACKING
CODE
R5
PACKING CODE
SUFFIX
G
DESCRIPTION
AEC-Q101 qualified
Green compound
3
Version:O1705
SK52B - SK515B
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.1 Forward Current Derating Curve
6
AVERAGE FORWARD CURRENT (A)
1000
Fig.2 Typical Junction Capacitance
5
SK55B-SK56B
CAPACITANCE (pF)
SK52B-SK54B
4
3
2
1
0
50
60
70
80
90 100 110 120 130 140 150 160
LEAD TEMPERATURE (
°
C)
100
SK59B-SK515B
RESISTIVE OR
INDUCTIVELOAD
10
0.1
f=1.0MHz
Vsig=50mVp-p
1
10
100
REVERSE VOLTAGE (V)
Fig.3 Typical Reverse Characteristics
100
INSTANTANEOUS REVERSE CURRENT (mA)
T
J
=125
o
C
10
INSTANTANEOUS FORWARD CURRENT (A)
100
10
Fig.4 Typical Forward Characteristics
10 1
T
J
=125
o
C
UF1DLW
1
T
J
=75
o
C
T
J
=125°C
0.1
1
0.01
0.1
0.001
0.3
0.01
0
0.2
0.4
0.6
0.8
1
0.4
0.5
0.6
0.7
T
J
=25°C
T
J
=25
o
C
0.1
T
J
=25
o
C
0.01
0.001
0
20
40
60
80
SK52B-SK54B
SK55B-SK515B
100
120
140
Pulse width
SK52B-SK54B
SK55B-SK56B
0.8
SK59B-SK515B
0.9
1
1.1
1.2
1.4
1.2
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FORWARD VOLTAGE (V)
4
Version:O1705
(A)
SK52B - SK515B
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.5 Maximum Non-repetitive Forward Surge Current
PEAK FORWARD SURGE CURRENT(A)
TRANSIENT THERMAL IMPEDANCE (°C/W)
150
Fig.6 Typical Transient Thermal Characteristics
100
8.3ms Single Half Sine Wave
130
110
90
70
50
1
10
NUMBER OF CYCLES AT 60 Hz
100
10
1
0.1
0.01
0.1
1
10
100
T-PULSE DURATION(s)
5
Version:O1705
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