• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PowerPAK
®
SC-70-6L Single
S
4
D
5
D
6
APPLICATIONS
S
7
2.0
Top View
D
1
m
5m
2
3
D
G
Bottom View
1
D
• DC/DC converters and synchronous
buck converters
- Lower ringing voltage from soft turn-on
- High efficiency from fast turn-off
G
- Lower shoot-through possibility
• Battery charging and protection
• Load switch
S
N-Channel MOSFET
Marking Code:
AX
Ordering Information:
SiA468DJ-T1-GE3 (lead (Pb)-free and halogen-free)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
Continuous Drain Current (T
J
= 150 °C)
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current (t = 100 μs)
Continuous Source-Drain Diode Current
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
Maximum Power Dissipation
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature)
c, d
T
J
, T
stg
P
D
I
DM
I
S
I
D
SYMBOL
V
DS
V
GS
LIMIT
30
+20 / -16
37.8
36.3
16.1
a, b
12.9
a, b
70
15.8
2.9
a, b
19
12
3.5
a, b
2.2
a, b
-55 to +150
260
°C
W
A
UNIT
V
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
a, e
Maximum Junction-to-Case (Drain)
t
5s
Steady state
SYMBOL
R
thJA
R
thJC
TYPICAL
28
5.3
MAXIMUM
36
6.5
UNIT
°C/W
Notes
a. Surface mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Maximum under steady state conditions is 80 °C/W.
S16-1266-Rev. A, 27-Jun-16
Document Number: 67408
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
05
2.
m
m
SiA468DJ
www.vishay.com
Vishay Siliconix
SYMBOL
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 10 A, dI/dt = 100 A/μs, T
J
= 25 °C
I
S
= 10 A
T
C
= 25 °C
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 10 V, R
g
= 1
f = 1 MHz
V
DS
= 15 V, V
GS
= 10 V, I
D
= 12 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 12 A
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= +20 V / -16 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 11 A
V
GS
= 4.5 V, I
D
= 7 A
V
DS
= 10 V, I
D
= 11 A
MIN.
30
-
-
1
-
-
-
10
-
-
-
-
-
-
-
-
-
-
0.28
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
12.8
-4.8
-
-
-
-
-
0.0070
0.0091
35
1290
435
30
17.6
8.2
3.1
1.3
1.4
8
22
18
8
12
30
15
13
-
-
0.85
30
20
17
13
MAX.
-
-
-
2.4
± 100
1
10
-
0.0084
0.0114
-
-
-
-
22
16
-
-
2.8
16
40
36
16
25
45
30
26
12
40
1.2
45
35
-
-
ns
nC
pF
UNIT
V
mV/°C
V
nA
μA
A
S
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
a
A
V
ns
nC
ns
Notes
a. Pulse test; pulse width
100 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-1266-Rev. A, 27-Jun-16
Document Number: 67408
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiA468DJ
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
70
V
GS
= 10 V thru4V
Vishay Siliconix
Axis Title
10000
80
10000
56
2nd line
I
D
- Drain Current (A)
1000
1st line
2nd line
42
V
GS
= 3 V
2nd line
I
D
- Drain Current (A)
60
T
C
= 125 °C
1000
40
T
C
= 25 °C
T
C
= -55 °C
28
100
14
100
20
0
0
0.5
1
1.5
2
V
DS
- Drain-to-Source Voltage (V)
2nd line
10
0
0
1
2
3
4
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
Output Characteristics
Transfer Characteristics
Axis Title
0.02
10000
1500
Axis Title
10000
C
iss
2nd line
R
DS(on)
- On-Resistance (Ω)
1000
1st line
2nd line
0.01
V
GS
= 4.5 V
2nd line
C - Capacitance (pF)
0.015
1200
1000
1st line
2nd line
100
300
C
rss
900
C
oss
600
100
0.005
V
GS
= 10 V
0
0
14
28
42
56
70
I
D
- Drain Current (A)
2nd line
10
0
0
6
12
18
24
30
V
DS
- Drain-to-Source Voltage (V)
2nd line
10
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
Axis Title
10
2nd line
V
GS
- Gate-to-Source Voltage (V)
I
D
= 12 A
V
DS
= 8 V
V
DS
= 15 V
Axis Title
10000
2nd line
R
DS(on)
- On-Resistance (Normalized)
1.6
V
GS
= 10 V, I
D
= 11 A
10000
8
1.4
1000
1st line
2nd line
100
0.8
V
GS
= 4.5 V, 7 A
1000
1st line
2nd line
6
V
DS
= 24 V
1.2
4
100
2
1.0
0
0
5
10
15
20
Q
g
- Total Gate Charge (nC)
2nd line
10
0.6
-50
-25
0
25
50
75
100 125 150
T
J
- Junction Temperature (°C)
2nd line
10
Gate Charge
On-Resistance vs. Junction Temperature
S16-1266-Rev. A, 27-Jun-16
Document Number: 67408
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1st line
2nd line
SiA468DJ
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
100
10000
0.03
0.025
0.02
0.015
T
J
= 150 °C
Vishay Siliconix
Axis Title
10000
10
2nd line
I
S
- Source Current (A)
T
J
= 150 °C
2nd line
R
DS(on)
- On-Resistance (Ω)
1000
1st line
2nd line
1000
1st line
2nd line
100
T
J
= 25 °C
1
T
J
= 25 °C
0.1
100
0.01
0.01
0.005
0
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
2nd line
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
2nd line
10
10
Source-Drain Diode Forward Voltage
Axis Title
1.7
I
D
= 250 μA
On-Resistance vs. Gate-to-Source Voltage
10000
30
25
1.5
2nd line
V
GS(th)
(V)
1000
Power (W)
20
1st line
2nd line
1.3
15
10
5
1.1
100
0.9
0.7
-50
-25
0
25
50
75
100 125 150
T
J
- Temperature (°C)
2nd line
10
0
0.001
0.01
0.1
1
Time (s)
10
100
1000
Threshold Voltage
Axis Title
Single Pulse Power, Junction-to-Ambient
100
I
DM
limited
10000
Limited by R
DS(on)(1)
2nd line
I
D
- Drain Current (A)
10
I
D
limited
100 μs
1 ms
10 ms
100 ms
1000
1st line
2nd line
100
10
1
0.1
T
A
= 25 °C
Single pulse
BVDSS limited
DC, 10 s, 1 s
0.01
0.1
(1)
1
10
100
V
DS
- Drain-to-Source Voltage (V)
V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
S16-1266-Rev. A, 27-Jun-16
Document Number: 67408
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiA468DJ
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
42
35
2nd line
I
D
- Drain Current (A)
Package limited
Vishay Siliconix
10000
28
21
14
7
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
2nd line
1000
1st line
2nd line
100
10
Current Derating
a
Axis Title
24
10000
2.20
1.76
18
1000
2nd line
Power (W)
Power (W)
12
100
6
1st line
2nd line
1.32
0.88
0.44
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
2nd line
10
0.00
0
25
50
75
100
125
150
T
A
- AmbientTemperature(°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
Note
a. The power dissipation P
D
is based on T
J
(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
S16-1266-Rev. A, 27-Jun-16
Document Number: 67408
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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