• Multiple center power and ground pins for improved
noise immunity
• Easy memory expansion with CE\ and OE\
options
• All inputs and outputs are TTL-compatible
• Single +3.3V Power Supply +/- 0.3%
• Data Retention Functionality Testing
• Cost Efficient Plastic Packaging
• Extended Testing Over -55ºC to +125ºC for plastics
36-Pin Flat Pack (F)
OPTIONS
• Timing
12ns access
15ns access
20ns access
• Operating Temperature Ranges
Military (-55
o
C to +125
o
C)
Industrial (-40
o
C to +85
o
C)
• Package(s)
Ceramic Flatpack
Plastic SOJ (400 mils wide)
Ceramic LCC
• 2V data retention/low power
MARKING
-12
-15
-20
XT
IT
F
DJ
EC
L
No. 307
No. 210
GENERAL DESCRIPTION
The AS5LC512K8 is a 3.3V high speed SRAM. It offers
flexibility in high-speed memory applications, with chip enable (CE\)
and output enable (OE\) capabilities. These features can place the
outputs in High-Z for additional flexibility in system design.
Writing to these devices is accomplished when write enable (WE\)
and CE\ inputs are both LOW. Reading is accomplished when WE\
remains HIGH and CE\ and OE\ go LOW.
As a option, the device can be supplied offering a reduced power
standby mode, allowing system designers to meet low standby power
requirements. This device operates from a single +3.3V power supply
and all inputs and outputs are fully TTL-compatible.
The AS5LC512K8DJ offers the convenience and reliability of the
AS5LC512K8 SRAM and has the cost advantage of a plastic
encapsulation.
For more products and information
please visit our web site at
www.austinsemiconductor.com
AS5LC512K8
Rev. 1.0 7/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1
SRAM
Austin Semiconductor, Inc.
FUNCTIONAL BLOCK DIAGRAM
VCC
GND
AS5LC512K8
DQ8
INPUT BUFFER
ROW DECODER
I/O
CONTROLS
4,194,304-BIT
MEMORY ARRAY
1024 ROWS X
4096 COLUMNS
A0-A18
DQ1
CE\
COLUMN DECODER
OE\
WE\
*POWER
DOWN
*On the low voltage Data Retention option.
PIN FUNCTIONS
A0 - A18
Address Inputs
Write Enable
Chip Enable
Output Enable
Data Inputs/Outputs
Power
Ground
No Connection
TRUTH TABLE
MODE
OE\ CE\ WE\
STANDBY
X
H
X
READ
L
L
H
NOT SELECTED H
L
H
WRITE
X
L
L
X = Don’t Care
WE\
I/O
HIGH-Z
Q
HIGH-Z
D
POWER
STANDBY
ACTIVE
ACTIVE
ACTIVE
CE\
OE\
I/O
0
- I/O
7
V
CC
V
SS
NC
AS5LC512K8
Rev. 1.0 7/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
2
SRAM
Austin Semiconductor, Inc.
ABSOLUTE MAXIMUM RATINGS*
AS5LC512K8
*Stresses greater than those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. This is
Voltage on Vcc Supply Relative to Vss
Vcc .........................................................................-.5V to 4.6V a stress rating only and functional operation of the device at
Storage Temperature .....................................-65°C to +150°C these or any other conditions above those indicated in the
Short Circuit Output Current (per I/O)…........................20mA operation section of this specification is not implied. Exposure
Voltage on any Pin Relative to Vss........................-.5V to 4.6V to absolute maximum rating conditions for extended periods
Maximum Junction Temperature**..............................+150°C may affect reliability.
Power Dissipation ................................................................1W ** Junction temperature depends upon package type, cycle
time, loading, ambient temperature and airflow, and humidity.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-55
o
C < T
A
< +125
o
C & -40
o
C < T
A
< +85
o
C ; Vcc = 3.3V +0.3%)
DESCRIPTION
Power Supply
Current: Operating
CONDITIONS
CE\ < V
IL
; Vcc = MAX
f = MAX = 1/t
RC
Outputs Open
"L" Version Only
CE\ > V
IH
, All other inputs < V
IL
,
Vcc = MAX, f = 0,
Outputs Open
Power Supply
Current: Standby
"L" Version Only
CE\ > Vcc -0.2V; Vcc = MAX
V
IN
<Vss +0.2V or
V
IN
>Vcc -0.2V; f = 0
"L" Version Only
I
SBCLP
9
9
9
mA
I
CCSP
I
CCLP
I
SBTSP
I
SBTLP
I
SBCSP
80
60
70
50
60
40
mA
mA
3, 2
SYM
-12
MAX
-15
-20
UNITS NOTES
20
20
20
mA
15
15
15
mA
15
15
15
mA
*
"
"
"
CAPACITANCE
PARAMETER
Input Capacitance
Output Capactiance
AS5LC512K8
Rev. 1.0 7/02
" # $#%&
' ( )!
' )!
CONDITIONS
T
A
= 25 C, f = 1MHz
V
IN
= 0
o
(
µ
!
µ
!
SYMBOL
C
I
Co
MAX
9
6
UNITS
pF
pF
NOTES
4
4
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
3
SRAM
Austin Semiconductor, Inc.
AS5LC512K8
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(-55
o
C < T
A
< +125
o
C or -40
o
C to +85
o
C; Vcc = 3.3V +0.3%)
!"#
(
"#
!"#
(
"#
&
$% &% '
*+
-
, *
.
*+
/ *
, *
)
)
, *
(
.
(
*
(
!"#
*
"#
&
'
)
$% &% '
AS5LC512K8
Rev. 1.0 7/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
4
SRAM
Austin Semiconductor, Inc.
AC TEST CONDITIONS
Input pulse levels ...................................................... Vss to 3.0V
Input rise and fall times ......................................................... 3ns
1、引言 汽车污染是当前人们最为关心和急需解决的重要课题之一。作为汽车排气污染物的检测的重要方法,简易瞬态工况法（VMAS法，IG法）可以统计排放总质量，监控车辆的真实排放情况，设备成本不高，测量比较准确，与新车认证检测结果具有相关性，可以检测NO相关因子等一系列优点，成为人们研究的热点。VMAS（Vehicle Mass Analysis System）检测方法在美国和欧洲都有很好的应用基础，...[详细]
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