BYR29X-800P
Ultrafast power diode
5 May 2016
Product data sheet
1. General description
Ultrafast power diode in a SOD113 (2-lead TO-220F) plastic package.
2. Features and benefits
•
•
•
Fast switching
Low forward voltage drop
Soft recovery characteristic
3. Applications
•
•
•
Discontinuous Current Mode (DCM) Power Factor Correction (PFC)
High frequency switched-mode power supplies
TV power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol
V
RRM
I
F(AV)
I
FRM
I
FSM
Parameter
repetitive peak reverse
voltage
average forward
current
δ = 0.5 ; T
h
≤ 88 °C; square-wave
pulse;
Fig. 1; Fig. 2; Fig. 3
Conditions
Min
-
-
-
-
-
Typ
-
-
-
-
-
Max
800
8
16
80
88
Unit
V
A
A
A
A
repetitive peak forward δ = 0.5 ; t
p
= 25 µs; T
h
≤ 88 °C;
current
square-wave pulse
non-repetitive peak
forward current
t
p
= 10 ms; T
j(init)
= 25 °C; sine-wave
pulse;
Fig. 4
t
p
= 8.3 ms; T
j(init)
= 25 °C; sine-wave
pulse;
Fig. 4
Static characteristics
V
F
forward voltage
I
F
= 8 A; T
j
= 25 °C;
Fig. 6
I
F
= 8 A; T
j
= 150 °C;
Fig. 6
Dynamic characteristics
t
rr
reverse recovery time
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 100 A/µs;
T
j
= 25 °C;
Fig. 7
-
40
55
ns
-
-
1.4
1.2
1.7
1.5
V
V
WeEn Semiconductors
BYR29X-800P
Ultrafast power diode
5. Pinning information
Table 2. Pinning information
Pin
1
2
mb
Symbol Description
K
A
n.c.
cathode
anode
mounting base; isolated
Simplified outline
mb
Graphic symbol
K
A
001aaa020
1
2
TO-220F (SOD113)
BYR29X-800P
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
5 May 2016
2 / 10
WeEn Semiconductors
BYR29X-800P
Ultrafast power diode
6. Limiting values
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
Parameter
repetitive peak reverse
voltage
crest working reverse
voltage
reverse voltage
average forward current
repetitive peak forward
current
non-repetitive peak
forward current
DC
δ = 0.5 ; T
h
≤ 88 °C; square-wave pulse;
Fig. 1; Fig. 2; Fig. 3
δ = 0.5 ; t
p
= 25 µs; T
h
≤ 88 °C; square-
wave pulse
t
p
= 10 ms; T
j(init)
= 25 °C; sine-wave
pulse;
Fig. 4
t
p
= 8.3 ms; T
j(init)
= 25 °C; sine-wave
pulse;
Fig. 4
T
stg
T
j
20
Conditions
Min
-
-
-
-
-
-
-
-40
-
Max
800
800
800
8
16
80
88
175
175
Unit
V
V
V
A
A
A
A
°C
°C
storage temperature
junction temperature
aae798-001
P
tot
(W)
δ= 1.0
15
P
tot
(W)
2.2
aae798-002
a = 1.57
1.9
2.8
4.0
15
0.2
0.5
10
10
0.1
5
5
0
0
2
4
6
8
I
F(AV)
(A)
10
12
0
0
2
4
6
I
F(AV)
(A)
8
I
F(AV)
= I
F(RMS)
× √δ
V
o
= 1.173 V; R
s
= 0.040 Ω
Fig. 1. Forward power dissipation as a function of
average forward current; square waveform; maximum
values
a = form factor = I
F(RMS)
/ I
F(AV)
V
o
= 1.173 V; R
s
= 0.040 Ω
Fig. 2. Forward power dissipation as a function
of average forward current; sinusoidal waveform;
maximum values
BYR29X-800P
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
5 May 2016
3 / 10
WeEn Semiconductors
BYR29X-800P
Ultrafast power diode
I
F(AV)
(A)
10
88 °C
aae798-003
10
4
I
FSM
(A)
10
3
I
F
aae798-004
I
FSM
8
6
t
t
p
T
j(init)
= 25 °C max
4
10
2
2
0
-50
0
50
100
150
200
T
h
(°C)
10
10
-5
10
-4
10
-3
t
p
(s)
10
-2
Fig. 3. Forward current as a function of heatsink
temperature; maximum values
Fig. 4. Non-repetitive peak forward current as a function
of pulse width; sinusoidal waveform; maximum values
BYR29X-800P
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
5 May 2016
4 / 10
WeEn Semiconductors
BYR29X-800P
Ultrafast power diode
7. Thermal characteristics
Table 4. Thermal characteristics
Symbol
R
th(j-h)
Parameter
thermal resistance
from junction to
heatsink
thermal resistance
from junction to
ambient free air
10
Conditions
with heatsink compound;
Fig. 5
Min
-
Typ
-
Max
6
Unit
K/W
R
th(j-a)
in free air
-
60
-
K/W
aae798-005
Z
th(j-h)
(K/W)
1
10
-1
P
δ=
t
p
T
t
p
10
-2
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
1
t
T
t
p
(s)
10
Fig. 5. Transient thermal impedance from junction to heatsink as a function of pulse duration
BYR29X-800P
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
5 May 2016
5 / 10
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