CD214B-B3xR Series Schottky Barrier Rectifier Chip Diode
General Information
Ro VE LEA
HS RS D
C ION FRE
OM S E
PL AR
IA E
NT
*
Portable communications, computing and video equipment manufacturers are
challenging the semiconductor industry to develop increasingly smaller electronic
components.
Bourns offers Schottky Rectifier Diodes for rectification applications, in a compact chip
package compatible with DO-214AA (SMB) size format. The Schottky Rectifier Diodes
offer a forward current of 3 A with a choice of repetitive peak reverse voltage of 20 V up
to 100 V.
Absolute Maximum Ratings (@ T
A
= 25 °C Unless Otherwise Noted)
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum Average Forward Current
Maximum Peak Forward Surge Current
(8.3 ms Single Half Sine-Wave)
Operating Junction Temperature Range
Storage Temperature Range
Symbol
V
RRM
I
F(AV)
I
FSM
T
OPR
T
STG
-55 to +125
-55 to +150
B320R
20
B340R
40
CD214B-
B360R
60
B3100R
100
Unit
V
A
A
-55 to +150
°C
°C
3
80
Electrical Characteristics (@ T
A
= 25 °C Unless Otherwise Noted)
Parameter
Symbol
IF = 1 A
V
F
IF = 3 A
DC Reverse Current
Typical
Thermal
Resistance
(NOTE 2)
Condition or Model
Maximum Instantaneous
Forward Voltage
(NOTE 1)
CD214B-B360R
CD214B-B3100R
CD214B-B320R
CD214B-B340R
CD214B-B360R
CD214B-B3100R
CD214B-B320R
CD214B-B340R
Min.
Typ.
0.40
0.48
0.58
0.48
0.65
0.78
0.04
180
55
17
Max.
Unit
0.50
0.70
0.85
0.50
V
Typical Junction Capacitance
Junction to
Ambient
Junction to
Lead
CJ
R
θJA
R
θJL
I
R
VR = VRRM
VR = 4 V, f = 1.0 MHz
mA
pF
°C/W
NOTES:
(1) Pulse width 300 microsecond, 1 % duty cycle.
(2) Mounted on PCB with 5.0 x 5.0 mm (0.2 x 0.2 inch) copper pad areas.
*RoHS Directive 2015/863, Mar 31, 2015 and Annex.
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
CD214B-B3xR Series Schottky Barrier Rectifier Chip Diode
3312 - 2 mm SMD Trimming Potentiometer
Average Forward Rectified Current
Average Forward Rectified Current
Average Forward Rectified Current
(Amps) (Amps)
(Amps)
CD214B-B360R
CD214B-B3100R
CD214B-B360R
CD214B-B3100R
CD214B-B360R
CD214B-B3100R
Forward
3.0
Current Derating Curve
3.0
2.0
2.0
2.0
1.0
1.0
1.0
0
0
0
0
0
0
CD214B-B320R
CD214B-B340R
Max. Peak Forward Surge Current
100
80
100
80
60
80
60
40
60
40
20
40
20
0
0
20
0
0
0
0
Peak Forward Surge Current
Peak Forward Surge Current
Peak Forward Surge Current
(Amps) (Amps)
(Amps)
Performance Graphs
3.0
100
8.3 ms
Single Half
Sine-Wave
8.3 ms
(JEDEC Method)
Single Half
Sine-Wave
8.3 ms
Single Half
(JEDEC Method)
Sine-Wave
(JEDEC Method)
10
100
100
100
CD214B-B320R
Resistive or
CD214B-B340R
Inductive Load
CD214B-B320R
PCB Mounted on
Resistive or
CD214B-B340R
5.0 x 5.0 mm
Inductive Load
(0.2 x 0.2 inch)
PCB Mounted on
Resistive or
Copper Pad Areas
5.0 x 5.0 mm
Inductive Load
(0.2 x 0.2 inch)
50
70
110
130
PCB Mounted on 90
Copper Pad Areas
5.0 x 5.0 mm
Lead Temperature (°C)
(0.2 x 0.2 inch)
50
70
90
110
130
Copper Pad Areas
50
150
150
150
170
170
170
Number of Cycles @ 60 Hz
10
Lead Temperature (°C)
90
110
130
70
Lead Temperature (°C)
Number of Cycles @ 60 Hz
10
Number of Cycles @ 60 Hz
Instantaneous Forward Current (A)
Instantaneous Forward Current (A)
Instantaneous Forward Current (A)
10
CD214B-B360R
CD214B-B360R
CD214B-B360R
CD214B-B3100R
CD214B-B3100R
CD214B-B3100R
Instantaneous Reverse Current (mA)
Instantaneous Reverse Current (mA)
Instantaneous Reverse Current (mA)
10
Typical Instantaneous Forward Characteristics
CD214B-B320R
10 CD214B-B340R
CD214B-B320R
1 CD214B-B340R
CD214B-B320R
CD214B-B340R
1
1
0.1
0.1
0.1
0.01
Ta = 25 °C
0
0
0
0.2
0.2
0.4
0.4
0.6
0.6
0.8
0.8
1.0
Ta = 25 °C
1.0
Ta = 25 °C
1.2
1.2
1.2
100
Typical Reverse Characteristics
100
10
100
10
1
10
1
0.1
1
0.1
0.01
0.1
0.01
0.001
0.010
20
40
60
TJ = 25 °C
TJ = 100 °C
TJ = 100 °C
TJ = 100 °C
0.01
0.01
Instantaneous Forward Voltage (Volts)
TJ = 25 °C
80
100
TJ = 25 °C
0.001
Percent of Rated Peak Reverse Voltage (%)
40
60
80
100
0
20
0.001
Percent of Rated Peak Reverse Voltage (%)
100
0
20
40
60
80
Instantaneous Forward Voltage (Volts)
0.4
0.6
0.8
1.0
0.2
Instantaneous Forward Voltage (Volts)
Percent of Rated Peak Reverse Voltage (%)
Typical Junction Capacitance
Junction Capacitance (pF)
Junction Capacitance (pF)
Junction Capacitance (pF)
400
400
400
100
100
100
10
0.1
10
Reverse Voltage (Volts)
0.1
1.0
10
100
10
Reverse Voltage (Volts)
Specifications are subject to change without notice.
0.1
1.0
10
100
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Reverse Voltage (Volts)
Users should verify actual device performance in their specific applications.
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVP-P
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVP-P
TJ = 25 °C
f = 1.0 MHz
1.0
Vsig = 50 mVP-P
10
100
3312 - 2 mm SMD Trimming Potentiometer
CD214B-B3xR Series Schottky Barrier Rectifier Chip Diode
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
3312 - 2 mm SMD Trimming Potentiometer
CD214B-B3xR Series Schottky Barrier Rectifier Chip Diode
Packaging Information
The product is dispensed in tape and reel format (see diagram below).
P
0
P
1
E
T
120 °
F
B
W
D2
D1 D
d
Index Hole
P
Trailer
A
Device
C
Leader
End
.......
.......
30 pitches
.......
.......
.......
.......
.......
.......
30 pitches
Start
W1
MM
DIMENSIONS:
(INCHES)
Direction of Feed
Item
Carrier Width
Carrier Length
Carrier Depth
Sprocket Hole
Reel Outside Diameter
Reel Inner Diameter
Feed Hole Diameter
Sprocket Hole Position
Punch Hole Position
Punch Hole Pitch
Sprocket Hole Pitch
Embossment Center
Overall Tape Thickness
Tape Width
Reel Width
Quantity per Reel
Symbol
A
B
C
d
D
D1
D2
E
F
P
P0
P1
T
W
W1
--
CD214B-B3 Series
3.70 ± 0.10
(0.146 ± 0.004)
5.40 ± 0.10
(0.213 ± 0.004)
1.65 ± 0.10
(0.065 ± 0.004)
1.50 ± 0.10
(0.059 ± 0.004)
330 ± 2.0
(12.992 ± 0.079)
50.0
MIN.
(1.969)
13.0 ± 0.50
(0.512 ± 0.020)
1.75 ± 0.10
(0.069 ± 0.004)
5.50 ± 0.05
(0.217 ± 0.002)
8.00 ± 0.10
(0.157 ± 0.004)
4.00 ± 0.10
(0.157 ± 0.004)
2.00 ± 0.10
(0.079 ± 0.004)
0.40
MAX.
(0.016)
12.00 ± 0.30
(0.472 ± 0.012)
18.7
MAX.
(0.736)
5,000
Asia-Pacific:
Tel: +886-2 2562-4117
Email: asiacus@bourns.com
Europe:
Tel: +36 88 520 390
Email: eurocus@bourns.com
The Americas:
Tel: +1-951 781-5500
Email: americus@bourns.com
www.bourns.com
01/18
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in
different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
据外媒报道，萨里大学（University of Surrey）的研究人员开发出一种无需依赖GPS即可在人口密集的城市地区精确定位设备位置的人工智能系统。该系统可将定位误差从734米缩小到22米以内，这对于自动驾驶汽车和救援车辆等技术的发展意义重大。 图片来源： 萨里大学 在发表于《IEEE Robotics and Automation Letters》的论文中，研究人员介绍了PEn...[详细]
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