ASDL-6620
Silicon NPN Phototransistor in T- Package
Data Sheet
Description
ASDL-6620 is a silicon phototransistor in a standard T-1
package with options of clear and dark package. It has
high sensitivity, fast response time and low dark current.
Collector is denoted by a flat on the packaging diagram
and the shorter of the two leads. This device matches with
infrared emitter ASDL-4671 and is ideal for low cost, high
volume applications.
Features
•
T-1 package
•
Option of Dark Lens that remove visible light
•
Option of Clear Lens
•
High Speed
•
High Sensitivity
•
Narrow Viewing Angle
Applications
•
Suitable for detectors of Infrared Applications
•
Smoke Detector
•
Alarm System
•
Photo Interrupter
•
Industrial Equipment
Ordering Information
Part Number
ASDL-660-C
ASDL-660-C3
ASDL-660-D
ASDL-660-D3
Lead Form
Straight
Color
Clear
Dark
Packaging
Tape & Reel
Bulk
Tape & Reel
Bulk
Shipping Option
4000pcs
8000pcs / Carton
4000pcs
8000pcs / Carton
Package Dimensions
Notes:
1. All dimensions are in millimeters (inches)
2. Tolerance is + 0.25mm (.010”) unless otherwise noted
3. Protruded resin under flange is 1.5mm (.059”) max
4. Lead spacing is measured where leads emerge from package
5. Specifications are subject to change without notice.
Absolute Maximum Ratings at T
A
=25°C
Parameter
Power Dissipation
Collector Emitter Voltage
Emitter Collector Voltage
Operating Temperature
Storage Temperature
Junction temperature
Lead Soldering Temperature
[ .6mm (0.063”) From Body ]
Symbol
P
DISS
V
CEO
V
ECO
T
O
T
S
T
J
60°C for 5 seconds
-40
-55
Min.
Max
00
30
5
85
00
0
°C
Unit
mW
V
V
°C
°C
°C
Electrical Characteristics at 25°C
Parameter
Collector-Emitter
Breakdown Voltage
Emitter-Collector
Breakdown Voltage
Collector Emitter
Saturation Voltage
Collector Dark Current
Thermal Resistance,
Junction to Pin
Symbol
V
(BR)CEO
V
(BR)ECO
V
CE(SAT)
I
CEO
Rq
JP
350
Min.
30
5
0.4
00
Typ.
Max.
Unit
V
V
V
nA
°C/W
Condition
Ic= mA
Ee = 0mW/cm
Ie = 00µA
Ee = 0mW/cm
Ie = 0.5mA
Ee = mW/cm
V
CE
=0V
Ee=0mW/cm
Optical Characteristics at 25°C
Parameter
Viewing Angle
Wavelength of Peak sensitivity
Spectral BandWidth
Rise Time
Symbol
θ/
λ
PK
Δλ
t
r
400
700
Min.
Typ.
0
900
900
900
0
00
00
Max.
Unit
Deg
nm
nm
nm
µs
Clear
Dark
V
CC
= 5V
Ic = mA
RL = KΩ
V
CC
= 5V
Ic = mA
R
L
= KΩ
V
CE
= 5V
Ee = mW/cm
λ = 940nm
Condition
Fall Time
t
f
0
µs
On State Collector Current
I
C(ON)
.6
9.6
mA
3
Typical Electrical/Optical Characteristics Curves (T
A
=25˚C unless otherwise indicated)
Collector Power Dissipation Pc(mW)
120
100
80
60
40
20
0
-40 -20
0
20 40 60 80 100
Iceo-Collector Dark Current-
A
100
10
1
0.1
0.01
0
0
40
80
120
Ta-Ambient Temperature-
o
C
FIGURE 1. COLLECTOR DARK CURRENT VS AMBIENT TEMPERATURE
Ta-Ambient Temperature-
o
C
FIGURE 2. COLLECTOR POWER DISSIPATION VS AMBIENT TEMPERATURE
200
180
160
140
120
100
80
60
40
20
0
Tr Tf-Rise and Fall Time-
Relative Collector Current
Vcc=5V
VRL=1V
F =100Hz
PW =1ms
tf
tr
s
4.0
3.0
2.0
1.0
0
Vce= 5V
0
2
4
6
8
10
0
1
2
3
4
5
RL-Load Resistance-K
FIGURE 3. RISE AND FALL TIME VS LOAD RESISTANCE
Ee-Irradiance-mW/cm
2
FIGURE 4. RELATIVE COLLECTOR CURRENT VS IRRADIANCE
0
o
10
o
20
o
30
o
Relative Sensitivity
1.0
0.9
0.8
0.7
40
50
60
o
o
o
70
o
80
o
90
0.5 0.3
0.1
0.2 0.4 0.6
o
FIGURE 5. SENSITIVITY DIAGRAM
For product information and a complete list of distributors, please go to our web site:
www.avagotech.com
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