IGBT Transistors Trench gate field-stop IGBT, M series 650 V, 4 A low loss
参数名称 | 属性值 |
Product Attribute | Attribute Value |
制造商 Manufacturer | ST(意法半导体) |
产品种类 Product Category | IGBT Transistors |
RoHS | Details |
技术 Technology | Si |
封装 / 箱体 Package / Case | TO-220FP-3 |
安装风格 Mounting Style | Through Hole |
Configuration | Single |
Collector- Emitter Voltage VCEO Max | 650 V |
Collector-Emitter Saturation Voltage | 1.6 V |
Maximum Gate Emitter Voltage | +/- 20 V |
Continuous Collector Current at 25 C | 8 A |
Pd-功率耗散 Pd - Power Dissipation | 23 W |
最小工作温度 Minimum Operating Temperature | - 55 C |
最大工作温度 Maximum Operating Temperature | + 175 C |
Continuous Collector Current Ic Max | 8 A |
Gate-Emitter Leakage Current | +/- 250 uA |
工厂包装数量 Factory Pack Quantity | 1000 |
单位重量 Unit Weight | 0.068784 oz |
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