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HS1FHF2G

产品描述Rectifiers 1A,300V, G.P. HIGH EFFICIENT SMD RECTIFIER
产品类别分立半导体    二极管   
文件大小357KB,共4页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
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HS1FHF2G概述

Rectifiers 1A,300V, G.P. HIGH EFFICIENT SMD RECTIFIER

HS1FHF2G规格参数

参数名称属性值
厂商名称Taiwan Semiconductor
包装说明SMA, 2 PIN
Reach Compliance Codecompliant
ECCN代码EAR99
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
JEDEC-95代码DO-214AC
JESD-30 代码R-PDSO-C2
元件数量1
端子数量2
最高工作温度150 °C
最低工作温度-55 °C
最大输出电流1 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
参考标准AEC-Q101
最大重复峰值反向电压300 V
最大反向恢复时间0.05 µs
表面贴装YES
端子形式C BEND
端子位置DUAL

文档预览

下载PDF文档
HS1A - HS1M
Taiwan Semiconductor
CREAT BY ART
1A, 50V - 1000V High Efficient Surface Mount Rectifiers
FEATURES
- Glass passivated chip junction
- Ideal for automated placement
- Low forward voltage drop
- Fast switching for high efficiency
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case:
DO-214AC (SMA)
Molding compound, UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.06 g (approximately)
DO-214AC (SMA)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@1A
T
J
=25°C
Maximum reverse current @ rated V
R
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
T
J
=100°C
T
J
=125°C
t
rr
C
J
R
θJA
T
J
T
STG
50
20
70
- 55 to +150
- 55 to +150
I
R
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
1.0
5
50
150
75
15
ns
pF
°C/W
°C
°C
μA
HS
1A
50
35
50
HS
1B
100
70
100
HS
1D
200
140
200
HS
1F
300
210
300
1
30
1.3
1.7
HS
1G
400
280
400
HS
1J
600
420
600
HS
1K
800
560
800
HS
1M
1000
700
1000
UNIT
V
V
V
A
A
V
Document Number: DS_D1410042
Version: K15

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