d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 81 °C/W.
g. T
C
= 25 °C.
S16-1520-Rev. A, 01-Aug-16
Document Number: 67807
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7111EDN
www.vishay.com
Vishay Siliconix
SYMBOL
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
V
DS
= -15 V, V
GS
= 0 V, f = 1 MHz
TEST CONDITIONS
V
GS
= 0 V, I
D
= -250 μA
I
D
= -250 μA
V
DS
= V
GS
, I
D
= -250 μA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= 0 V, V
GS
= ± 4.5 V
V
DS
= -30 V, V
GS
= 0 V
V
DS
= -30 V, V
GS
= 0 V, T
J
= 70 °C
V
DS
-10 V, V
GS
= -4.5 V
V
GS
= -4.5 V, I
D
= -15 A
V
GS
= -2.5 V, I
D
= -10 A
V
DS
= -15 V, I
D
= -15 A
MIN.
-30
-
-
-0.6
-
-
-
-
-30
-
-
-
-
-
-
-
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= -10 A, dI/dt = 100 A/μs, T
J
= 25 °C
I
S
= -5 A, V
GS
= 0 V
T
C
= 25 °C
V
DD
= -15 V, R
L
= 1.5
,
I
D
-10 A,
V
GEN
= -4.5 V, R
g
= 1
f = 1 MHz
V
DS
= -15 V, V
GS
= -4.5 V, I
D
= -10 A
V
DS
= -15 V, V
GS
= -2.5 V, I
D
= -10 A
-
-
-
-
0.7
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
-24
3.4
-
0.70
0.06
-
-
-
0.00720
0.01310
64
5860
412
395
0.068
56.5
30.5
9.6
13.6
3
25
40
120
33
-
-
-0.75
32
30
16
16
MAX.
-
-
-
-1.6
10
1
1
10
-
0.00855
0.01600
-
-
-
-
-
85
46
-
-
5.5
50
80
240
66
47.3
150
-1.1
64
60
-
-
ns
nC
pF
UNIT
V
mV/°C
V
μA
μA
A
S
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-source breakdown voltage
V
DS
temperature coefficient
V
GS(th)
temperature coefficient
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current
a
Drain-source on-state resistance
a
Forward transconductance
a
Dynamic
b
Input capacitance
Output capacitance
Reverse transfer capacitance
C
rss
/C
iss
ratio
Total gate charge
Gate-source charge
Gate-drain charge
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
Pulse diode forward current
Body diode voltage
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
A
V
ns
nC
ns
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-1520-Rev. A, 01-Aug-16
Document Number: 67807
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7111EDN
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
0.005
10000
10
-2
Vishay Siliconix
Axis Title
10000
2nd line
I
GSS
- Gate Current (A)
0.004
1000
1st line
2nd line
0.003
T
J
= 25 °C
2nd line
I
GSS
- Gate Current (A)
10
-4
1000
T
J
= 150 °C
10
-6
T
J
= 25 °C
0.002
100
0.001
100
10
-8
0.000
0
4
8
12
16
20
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
10
-10
0
4
8
12
16
20
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
Gate-Current vs. Gate-Source Voltage
Gate-Current vs. Gate-Source Voltage
Axis Title
150
V
GS
= 5 V thru 3 V
Axis Title
10000
100
10000
120
2nd line
I
D
- Drain Current (A)
1000
1st line
2nd line
90
V
GS
= 2 V
2nd line
I
D
- Drain Current (A)
V
GS
= 2.5 V
80
1000
1st line
2nd line
100
20
T
C
= 125 °C
T
C
= -55 °C
60
T
C
= 25 °C
60
100
30
V
GS
= 1.5 V
V
GS
= 1 V
40
0
0
1
2
3
10
5
0
0
1
2
3
4
5
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
4
V
DS
- Drain-to-Source Voltage (V)
2nd line
Output Characteristics
Transfer Characteristics
Axis Title
0.025
10000
8000
Axis Title
10000
2nd line
R
DS(on)
- On-Resistance (Ω)
0.020
V
GS
= 2.5 V
6400
1000
1st line
2nd line
2nd line
C - Capacitance (pF)
C
iss
1000
1st line
2nd line
100
1600
C
oss
C
rss
0.015
4800
0.010
V
GS
= 4.5 V
3200
100
0.005
0
0
12
24
36
48
60
I
D
- Drain Current (A)
2nd line
10
0
0
10
6
12
18
24
30
V
DS
- Drain-to-Source Voltage (V)
2nd line
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
S16-1520-Rev. A, 01-Aug-16
Document Number: 67807
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1st line
2nd line
Si7111EDN
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
4.5
2nd line
V
GS
- Gate-to-Source Voltage (V)
I
D
= 10 A
Vishay Siliconix
Axis Title
10000
2nd line
R
DS(on)
- On-Resistance (Normalized)
1.6
I
D
= 10 A
V
GS
= 4.5 V
10000
3.6
V
DS
= 15 V
V
DS
= 20 V
1.4
1000
1st line
2nd line
2.7
V
DS
= 10 V
1000
1st line
2nd line
100
0.8
10
-50
-25
0
25
50
75
100 125 150
T
J
- Junction Temperature (°C)
2nd line
10000
I
D
= 250 μA
1.2
V
GS
= 2.5 V
1.8
100
0.9
1.0
0
0
12
24
36
48
60
Q
g
- Total Gate Charge (nC)
2nd line
10
0.6
Gate Charge
On-Resistance vs. Junction Temperature
Axis Title
100
10000
0.6
Axis Title
10
2nd line
I
S
- Source Current (A)
1000
1st line
2nd line
1
T
J
= 25 °C
0.4
2nd line
V
GS(th)
- Variance (V)
T
J
= 150 °C
1000
I
D
= 5 mA
0.1
100
0.01
0
100
-0.2
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
2nd line
10
-0.4
-50
-25
0
25
50
75
100 125 150
T
J
- Temperature (°C)
2nd line
10
Source-Drain Diode Forward Voltage
Threshold Voltage
Axis Title
0.05
I
D
= 10 A
Axis Title
10000
120
100
1000
1st line
2nd line
80
2nd line
Power (W)
60
40
20
100
1000
1st line
2nd line
10
0.01
0.1
Time (s)
2nd line
1
10
10000
2nd line
R
DS(on)
- On-Resistance (Ω)
0.04
0.03
0.02
100
T
J
= 125 °C
0.01
T
J
= 25 °C
0
0
1
2
3
4
5
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
0
0.001
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
S16-1520-Rev. A, 01-Aug-16
Document Number: 67807
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1st line
2nd line
0.2
Si7111EDN
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
1000
I
DM
limited
Vishay Siliconix
Axis Title
10000
65
10000
100
2nd line
I
D
- Drain Current (A)
100 μs
I
D
limited
1 ms
52
1000
2nd line
Power (W)
1st line
2nd line
39
1000
1st line
2nd line
100
13
10
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
2nd line
10
1
10 ms
Limited by R
DS(on) (1)
26
100
100 ms
1s
10 s
DC
BVDSS limited
0.1
T
A
= 25 °C
Single pulse
0.01
0.01
(1)
10
100
0
0.1
1
10
V
DS
- Drain-to-Source Voltage (V)
V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
Power, Junction-to-Case
Axis Title
70
10000
2.0
Axis Title
10000
56
2nd line
I
D
- Drain Current (A)
1000
1st line
2nd line
42
2nd line
Power (W)
1.6
1000
1st line
2nd line
100
0.4
10
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
2nd line
1.2
28
100
14
0.8
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
2nd line
10
0
Current Derating
a
Power, Junction-to-Ambient
Note
a. The power dissipation P
D
is based on T
J
max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S16-1520-Rev. A, 01-Aug-16
Document Number: 67807
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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