d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR 3 x 3 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum under steady state conditions is 80 °C/W for channel-1 and 69 °C/W for channel-2
g. T
C
= 25 °C
S17-1505-Rev. A, 02-Oct-17
Document Number: 76059
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiZ328DT
www.vishay.com
Vishay Siliconix
SYMBOL
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250 μA
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA
I
D
= 250 μA
I
D
= 250 μA
I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= +16 V, -12 V
V
DS
= 0 V, V
GS
= +16 V, -12 V
V
DS
= 25 V, V
GS
= 0 V
V
DS
= 25 V, V
GS
= 0 V
V
DS
= 25 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
= 25 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5
V, V
GS
= 10 V
V
DS
5
V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 5 A
V
GS
= 10 V, I
D
= 5 A
V
GS
= 4.5 V, I
D
= 5 A
V
GS
= 4.5 V, I
D
= 5 A
V
DS
= 10 V, I
D
= 10 A
V
DS
= 10 V, I
D
= 10 A
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Channel-1
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
Channel-2
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
V
DS
= 10 V, V
GS
= 10 V, I
D
= 5 A
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
V
DS
= 10 V, V
GS
= 10 V, I
D
= 5 A
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 5 A
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 5 A
Channel-1
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 5 A
Channel-2
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 5 A
V
DS
= 10 V, V
GS
= 0 V
f = 1 MHz
MIN.
25
25
-
-
-
-
1.1
1.1
-
-
-
-
-
-
10
10
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.28
0.18
TYP.
-
-
19
18
-4.1
-4.3
-
-
-
-
-
-
-
-
-
-
0.0120
0.0080
0.0175
0.0120
25
42
325
600
115
230
20
31
0.060
0.052
4.6
7.5
2.1
3.5
0.95
1.63
0.37
0.54
1.7
3.4
1.4
0.9
MAX.
-
-
-
-
-
-
2.5
2.5
± 100
± 100
1
1
5
5
-
-
0.0150
0.0100
0.0250
0.0150
-
-
-
-
-
-
-
-
0.120
0.110
6.9
11.3
3.2
5.3
-
-
-
-
-
-
2.8
1.8
nC
pF
S
A
μA
V
nA
mV/°C
UNIT
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-source breakdown voltage
V
DS
Temperature coefficient
V
GS(th)
Temperature coefficient
Gate threshold voltage
Gate source leakage
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
V
Zero gate voltage drain current
I
DSS
On-state drain current
b
I
D(on)
Drain-source on-state resistance
b
R
DS(on)
Forward transconductance
b
Dynamic
a
Input capacitance
Output capacitance
Reverse transfer capacitance
C
rss
/C
iss
ratio
g
fs
C
iss
C
oss
C
rss
Total gate charge
Q
g
Gate-source charge
Gate-drain charge
Output charge
Gate resistance
Q
gs
Q
gd
Q
oss
R
g
S17-1505-Rev. A, 02-Oct-17
Document Number: 76059
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiZ328DT
www.vishay.com
Vishay Siliconix
SYMBOL
TEST CONDITIONS
Ch-1
Channel-1
V
DD
= 10 V, R
L
= 2
I
D
5 A, V
GEN
= 10 V, R
g
= 1
Channel-2
V
DD
= 10 V, R
L
= 2
I
D
5 A, V
GEN
= 10 V, R
g
= 1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Channel-1
V
DD
= 10 V, R
L
= 2
I
D
5 A, V
GEN
= 4.5 V, R
g
= 1
Channel-2
V
DD
= 10 V, R
L
= 2
I
D
5 A, V
GEN
= 4.5 V, R
g
= 1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
I
S
= 5 A, V
GS
= 0 V
I
S
= 5 A, V
GS
= 0 V
Ch-1
Ch-2
Ch-1
Ch-2
Channel-1
I
F
= 5 A, di/dt = 100 A/μs, T
J
= 25 °C
Channel-2
I
F
= 5 A, di/dt = 100 A/μs, T
J
= 25 °C
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
7
8
11
5
12
15
5
5
13
15
66
61
8
10
5
5
-
-
-
-
0.82
0.83
16
21
10
11
10
11
6
10
MAX.
15
16
25
10
25
30
10
10
30
30
75
120
20
20
10
10
12.6
13.5
40
50
1.2
1.2
35
40
20
20
-
-
-
-
ns
V
ns
nC
A
ns
UNIT
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Dynamic
a
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
Pulse diode forward current (t = 100 μs)
Body diode voltage
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
T
C
= 25 °C
Notes
a. Guaranteed by design, not subject to production testing
b. Pulse test; pulse width
300 μs, duty cycle
2 %
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S17-1505-Rev. A, 02-Oct-17
Document Number: 76059
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiZ328DT
www.vishay.com
CHANNEL-1 TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
40
V
GS
= 10 V thru 5 V
Vishay Siliconix
Axis Title
10000
40
10000
2nd line
I
D
- Drain Current (A)
V
GS
= 4 V
1000
1st line
2nd line
2nd line
I
D
- Drain Current (A)
30
30
1000
20
T
C
= 25 °C
20
100
10
V
GS
= 3 V
100
10
T
C
= 125 °C
T
C
= -55 °C
0
0
0.5
1
1.5
2
2.5
3
V
DS
- Drain-to-Source Voltage (V)
2nd line
10
0
0
1
2
3
4
5
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
Output Characteristics
Transfer Characteristics
Axis Title
0.04
10000
400
C
iss
Axis Title
10000
2nd line
R
DS(on)
- On-Resistance (Ω)
2nd line
C - Capacitance (pF)
0.03
1000
V
GS
= 4.5 V
300
1000
200
C
oss
0.02
100
0.01
V
GS
= 10 V
1st line
2nd line
100
100
C
rss
0
0
10
20
I
D
- Drain Current (A)
2nd line
30
40
10
0
0
5
10
15
20
25
V
DS
- Drain-to-Source Voltage (V)
2nd line
10
On-Resistance vs. Drain Current
Capacitance
Axis Title
10
2nd line
V
GS
- Gate-to-Source Voltage (V)
I
D
= 5 A
Axis Title
10000
2nd line
R
DS(on)
- On-Resistance (Normalized)
1.6
I
D
= 5 A
V
GS
= 10 V
10000
8
V
DS
= 10 V
1.4
1000
V
GS
= 4.5 V
1000
1st line
2nd line
6
V
DS
= 5 V
4
V
DS
= 15 V
1.0
100
0.8
100
2
0
0
1
2
3
4
5
Q
g
- Total Gate Charge (nC)
2nd line
10
0.6
-50
-25
0
25
50
75
100 125 150
T
J
- Junction Temperature (°C)
2nd line
10
Gate Charge
On-Resistance vs. Junction Temperature
S17-1505-Rev. A, 02-Oct-17
Document Number: 76059
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1st line
2nd line
1.2
1st line
2nd line
1st line
2nd line
SiZ328DT
www.vishay.com
CHANNEL-1 TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
100
T
J
= 150 °C
Vishay Siliconix
Axis Title
10000
0.08
I
D
= 5 A
10000
2nd line
R
DS(on)
- On-Resistance (Ω)
2nd line
I
S
- Source Current (A)
0.06
1000
0.04
100
1st line
2nd line
T
J
= 125 °C
T
J
= 25 °C
10
T
J
= 25 °C
1000
1st line
2nd line
100
1
0.02
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
SD
- Source-to-Drain Voltage (V)
2nd line
10
0
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Axis Title
2.2
10000
50
Axis Title
10000
2.0
2nd line
V
GS(th)
(V)
1000
2nd line
Power (W)
1st line
2nd line
1.8
40
1000
1st line
2nd line
100
10
0.01
0.1
1
Time (s)
2nd line
10
100
10
1000
30
1.6
I
D
= 250 μA
20
100
1.4
1.2
-50
-25
0
25
50
75
100 125 150
T
J
- Temperature (°C)
2nd line
10
0
0.001
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
Axis Title
100
Limited by R
DS(on) (1)
I
DM
Limited
10000
I
D(ON)
Limited
2nd line
I
D
- Drain Current (A)
10
100 μs
1000
1
10 ms
100 ms
1s
10 s
DC
T
A
= 25 °C
Single pulse
100
0.1
0.01
0.1
(1)
10
1
10
100
V
DS
- Drain-to-Source Voltage (V)
V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
S17-1505-Rev. A, 02-Oct-17
Document Number: 76059
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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