SK52C - SK520C
Taiwan Semiconductor
5A, 20V - 200V Surface Mount Schottky Barrier Rectifier
FEATURES
●
●
●
●
●
Low power loss, high efficiency
Ideal for automated placement
Guard ring for over-voltage protection
High surge current capability
Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
I
F(AV)
V
RRM
I
FSM
T
J MAX
Package
VALUE
5
20 - 200
120
150
UNIT
A
V
A
°C
DO-214AB (SMC)
Single die
APPLICATIONS
●
●
●
●
Switching mode power supply (SMPS)
Adapters
Lighting application
Converter
Configuration
MECHANICAL DATA
●
●
●
●
Case: DO-214AB (SMC)
Molding compound meets UL 94V-0 flammability rating
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound
(halogen-free)
● Moisture sensitivity level: level 1, per J-STD-020
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 2 whisker test
● Polarity: As marked
● Weight: 0.21 g (approximately)
DO-214AB (SMC)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Marking code on the device
Repetitive peak reverse voltage
Reverse voltage, total rms value
Maximum DC blocking voltage
Forward current
Surge peak forward current, 8.3 ms
single half sine-wave superimposed
on rated load per diode
Critical rate of rise of off-state
voltage
Junction temperature
Storage temperature
V
RRM
V
R(RMS)
V
DC
I
F(AV)
I
FSM
dV/dt
T
J
T
STG
SYMBOL
SK
SK
SK
SK
SK
SK
SK
52C 53C 54C 55C 56C 59C 510C
SK
SK
SK
SK
SK
SK
SK
52C 53C 54C 55C 56C 59C 510C
20
30
40
50
60
90
100
14
20
21
30
28
40
35
50
42
60
5
120
10,000
- 55 to +150
- 55 to +150
63
90
70
100
SK
SK
UNIT
515C 520C
SK
SK
515C 520C
150 200
V
105
150
140
200
V
V
A
A
V/μs
°C
°C
1
Version:O1708
SK52C - SK520C
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to-lead thermal resistance per diode
Junction-to-ambient thermal resistance per diode
SYMBOL
R
ӨJL
R
ӨJA
LIMIT
17
50
UNIT
°C/W
°C/W
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
SK52C
SK53C
SK54C
SK55C
SK56C
SK59C
SK510C
SK515C
SK520C
SK52C
SK53C
SK54C
SK55C
SK56C
SK59C
SK510C
SK515C
SK520C
SK52C
SK53C
SK54C
SK55C
SK56C
SK59C
SK510C
SK515C
SK520C
SK52C
SK53C
SK54C
SK55C
SK56C
SK59C
SK510C
SK515C
SK520C
CONDITIONS
SYMBOL
TYP.
-
-
-
-
MAX.
0.55
0.75
0.85
0.95
UNIT
V
V
V
V
Forward voltage per diode
(1)
I
F
= 5A, T
J
= 25°C
V
F
-
T
J
= 25°C
I
R
-
0.5
mA
Reverse current @ rated V
R
(2)
per diode
0.3
mA
-
-
20
10
mA
mA
Reverse current @ rated V
R
(2)
per diode
T
J
= 100°C
I
R
-
-
mA
-
-
-
-
mA
mA
Reverse current @ rated V
R
(2)
per diode
T
J
= 125°C
I
R
-
5
mA
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
2
Version:O1708
SK52C - SK520C
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.1 Forward Current Derating Curve
6
AVERAGE FORWARD CURRENT (A)
1000
SK52C - SK54C
SK55C - SK56C
Fig.2 Typical Junction Capacitance
5
4
3
2
1
0
0
25
50
75
100
125
150
LEAD TEMPERATURE (
°
C)
CAPACITANCE (pF)
100
SK59C - SK520C
RESISTIVE OR
INDUCTIVE LOAD
f=1.0MHz
Vsig=50mVp-p
10
0.1
1
10
100
REVERSE VOLTAGE (V)
REVERSE VOLTAGE (V)
Fig.3 Typical Reverse Characteristics
INSTANTANEOUS REVERSE CURRENT (mA)
INSTANTANEOUS FORWARD CURRENT (A)
100
T
J
=125
°
C
10
100
10
Fig.4 Typical Forward Characteristics
SK55C - SK56C
1
10
0.1
SK52C - SK54C
T
J
=125°C
UF1DLW
1
T
J
=75
°
C
T
J
=25°C
SK515C - SK520C
0.1
T
J
=25
°
C
0.01
1
0.01
SK59C - SK510C
Pulse width
0.001
0
20
40
60
80
SK52C-SK54C
SK55C-SK520C
100
120
140
0.001
0.1
0
0.3
0.4
0.2
0.5
0.4
0.6
0.6
0.7
0.8
Pulse width 300μs
duty
1
0.8
1%
0.9
cycle
1.1
1
1.2
1.4
1.2
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FORWARD VOLTAGE (V)
4
Version:O1708
SK52C - SK520C
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.5 Maximum Non-repetitive Forward Surge Current
TRANSIENT THERMAL IMPEDANCE(℃/ W)
150
8.3ms Single Half Sine Wave
130
Fig.6 Typical Transient Thermal Characteristics
100
PEAK FORWARD SURGE CURRENT (A)
10
110
90
1
70
50
1
10
100
0.1
0.01
0.1
1
10
100
NUMBER OF CYCLES AT 60 Hz
T-PULSE DURATION(s)
5
Version:O1708
NXP MCU
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