MUR305S - MUR360S
Taiwan Semiconductor
3A, 50V - 600V Surface Mount Ultrafast Power Rectifier
FEATURES
●
●
●
●
●
Glass passivated junction
Ideal for automated placement
Built-in strain relief
Ultrafast recovery time for high efficiency
Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
I
F(AV)
V
RRM
I
FSM
T
J MAX
Package
VALUE
3
50 - 600
75
175
UNIT
A
V
A
°C
DO-214AB (SMC)
Single die
APPLICATIONS
● High frequency rectification
● Freewheeling application
● Switching mode converters and inverters in computer, automotive
and telecommunication.
Configuration
MECHANICAL DATA
●
●
●
●
Case: DO-214AB (SMC)
Molding compound meets UL 94V-0 flammability rating
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound
(halogen-free)
● Moisture sensitivity level: level 1, per J-STD-020
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 2 whisker test
● Polarity: As marked
● Weight: 0.21 g (approximately)
DO-214AB (SMC)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Marking code on the device
Repetitive peak reverse voltage
Reverse voltage, total rms value
Maximum DC blocking voltage
Forward current
Surge peak forward current, 8.3
ms single half sine-wave
superimposed on rated load per
diode
Junction temperature
Storage temperature
V
RRM
V
R(RMS)
V
DC
I
F(AV)
I
FSM
T
J
T
STG
SYMBOL
MUR
305S
MUR
305S
50
35
50
MUR
310S
MUR
310S
100
70
100
MUR
315S
MUR
315S
150
105
150
3
75
- 55 to +175
- 55 to +175
MUR
320S
MUR
320S
200
140
200
MUR
340S
MUR
340S
400
280
400
MUR
360S
MUR
360S
600
420
600
UNIT
V
V
V
A
A
°C
°C
1
Version:G1708
MUR305S - MUR360S
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to-lead thermal resistance per diode
SYMBOL
R
ӨJL
LIMIT
11
UNIT
°C/W
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
MUR305S
MUR310S
MUR315S
MUR320S
MUR340S
MUR360S
MUR305S
MUR310S
MUR315S
MUR320S
MUR340S
MUR360S
MUR305S
MUR310S
MUR315S
MUR320S
MUR340S
MUR360S
MUR305S
MUR310S
MUR315S
MUR320S
MUR340S
MUR360S
MUR305S
MUR310S
MUR315S
MUR320S
MUR340S
MUR360S
CONDITIONS
SYMBOL
TYP.
-
I
F
= 3A, T
J
= 25°C
V
F
-
1.250
V
MAX.
0.875
UNIT
V
Forward voltage per diode
(1)
-
I
F
= 3A, T
J
= 150°C
V
F
-
0.710
V
1.050
V
μA
μA
μA
μA
-
T
J
= 25°C
I
R
-
5
Reverse current @ rated V
R
(2)
per diode
10
-
T
J
= 150°C
I
R
-
150
250
Reverse recovery time
I
F
=0.5A , I
R
=1.0A
I
RR
=0.25A
-
t
rr
-
25
ns
50
ns
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
2
Version:G1708
MUR305S - MUR360S
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.1 Forward Current Derating Curve
4
AVERAGE FORWARD CURRENT (A)
1000
Fig.2 Typical Junction Capacitance
3
CAPACITANCE (pF)
2
100
MUR305S - MUR320S
1
MUR340S - MUR360S
0
0
25
50
75
100
125
150
175
10
0.1
1
10
100
REVERSE VOLTAGE (V)
LEAD TEMPERATURE (
o
C)
Fig.3 Typical Reverse Characteristics
INSTANTANEOUS REVERSE CURRENT (μA)
INSTANTANEOUS FORWARD CURRENT (A)
100
MUR305S - MUR320S
10
T
J
=150℃
10
Fig.4 Typical Forward Characteristics
10
MUR305S - MIR320S
1
UF1DLW
T
J
=125°C
T
J
=150℃
1
0.1
0.01
T
J
=25℃
Pulse width
0.01
T
J
=25℃
0.001
10
20
30
40
50
60
70
80
90
100
0.001
0.1
0
0.3
0.2
0.4
0.4
0.5
0.6
0.6
0.7
0.8
0.8
1
0.9
1.2
1
1.4
1.1
1.6
1.2
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FORWARD VOLTAGE (V)
4
Version:G1708
(A)
1
0.1
T
J
=25°C
MUR305S - MUR360S
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.5 Typical Reverse Characteristics
INSTANTANEOUS REVERSE CURRENT (μA)
INSTANTANEOUS FORWARD CURRENT (A)
100
MUR340S - MUR360S
10
T
J
=150℃
1
10
10
Fig.6 Typical Forward Characteristics
MUR340S - MUR360S
1
UF1DLW
T
J
=125°C
T
J
=150℃
0.1
T
J
=25℃
0.01
Pulse width
0.001
0.1
0.3
0
0.4
0.2
0.5
0.4
0.6
0.7
0.8
0.9
1
1.1
1.8
1.2
2
0.6 0.8
1
1.2 1.4 1.6
FORWARD VOLTAGE (V)
0.01
T
J
=25℃
0.001
10
20
30
40
50
60
70
80
90
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig.7 Maximum Non-repetitive Forward Surge Current
PEAK FORWARD SURGE CURRENT (A)
80
70
60
50
40
30
20
10
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
8.3ms Single Half Sine Wave
5
Version:G1708
(A)
0.1
1
T
J
=25°C
传感器
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