4
SK32A - SK320A
Taiwan Semiconductor
3A, 20V - 200V Surface Mount Schottky Barrier Rectifier
FEATURES
●
●
●
●
●
Low power loss, high efficiency
Ideal for automated placement
Guard ring for over-voltage protection
High surge current capability
Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
I
F(AV)
V
RRM
I
FSM
T
J MAX
Package
VALUE
3
20 - 200
70
150
UNIT
A
V
A
°C
DO-214AC (SMA)
Single die
APPLICATIONS
●
●
●
●
Switching mode power supply (SMPS)
Adapters
Lighting application
On-board DC/DC converter
Configuration
MECHANICAL DATA
● Case: DO-214AC (SMA)
● Molding compound meets UL 94V-0 flammability rating
● Packing code with suffix "G" means green compound
(halogen-free)
● Part no. with suffix “H” means AEC-Q101 qualified
● Moisture sensitivity level: level 1, per J-STD-020
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 2 whisker test
● Polarity: As marked
● Weight: 0.07 g (approximately)
DO-214AC (SMA)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Marking code on the device
Repetitive peak reverse voltage
Reverse voltage, total rms value
Maximum DC blocking voltage
Forward current
Surge peak forward current, 8.3 ms
single half sine-wave superimposed
on rated load per diode
Critical rate of rise of off-state
voltage
Junction temperature
Storage temperature
V
RRM
V
R(RMS)
V
DC
I
F(AV)
I
FSM
dV/dt
T
J
T
STG
SYMBOL
SK
SK
SK
SK
SK
SK
SK
32A 33A 34A 35A 36A 39A 310A
SK
SK
SK
SK
SK
SK
SK
32A 33A 34A 35A 36A 39A 310A
20
30
40
50
60
90
100
14
20
21
30
28
40
35
50
42
60
3
70
10,000
- 55 to +150
- 55 to +150
63
90
70
100
SK
SK
UNIT
315A 320A
SK
SK
315A 320A
150 200
V
105
150
140
200
V
V
A
A
V/µs
°C
°C
1
Version:T1705
4
SK32A - SK320A
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to- ambient thermal resistance
Junction-to-lead thermal resistance
SYMBOL
R
ӨJA
R
ӨJL
LIMIT
66
25
UNIT
°C/W
°C/W
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
SK32A
SK33A
SK34A
SK35A
Forward voltage per diode
(1)
CONDITIONS
SYMBOL
TYP
-
MAX
0.55
UNIT
V
SK36A
SK39A
SK310A
SK315A
SK320A
SK32A
SK33A
SK34A
SK35A
SK36A
SK39A
SK310A
SK315A
SK320A
SK32A
SK33A
SK34A
SK35A
SK36A
SK39A
SK310A
SK315A
SK320A
SK32A
SK33A
SK34A
SK35A
SK36A
SK39A
SK310A
SK315A
SK320A
I
F
= 3A,T
J
= 25°C
V
F
-
-
-
0.72
0.85
0.95
V
V
V
-
0.5
mA
Reverse current @ rated V
R
per
diode
(2)
T
J
=25°C
I
R
-
0.2
mA
-
0.1
mA
-
10
mA
Reverse current @ rated V
R
per
diode
(2)
T
J
= 100°C
I
R
-
5
mA
-
-
mA
-
-
mA
Reverse current @ rated V
R
per
diode
(2)
T
J
= 125°C
I
R
-
10
mA
-
0.5
mA
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
2
Version:T1705
4
SK32A - SK320A
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.1 Forward Current Derating Curve
3.5
AVERAGE FORWARD CURRENT (A)
1000
Fig.2 Typical Junction Capacitance
3
CAPACITANCE (pF)
SK32A-SK34A
SK35A - SK36A
2.5
2
1.5
1
0.5
0
50
60
70
80
90
100 110 120 130 140 150
LEAD TEMPERATURE (
°
C)
100
SK39A - SK320A
RESISTIVE OR
INDUCTIVE LOAD
10
0.1
f=1.0MHz
Vslg=50mVp-p
1
10
100
REVERSE VOLTAGE (V)
Fig.3 Typical Reverse Characteristics
INSTANTANEOUS REVERSE CURRENT (mA)
INSTANTANEOUS FORWARD CURRENT (A)
100
SK32A - SK36A, 100°C
SK39A - SK320A, 25°C
10
SK39A - SK320A, 125°C
SK35A - SK36A, 125°C
1
Fig.4 Typical Forward Characteristics
100
10
SK35A - SK36A
UF1DLW
SK32A - SK34A
T
J
=125°C
1
10
0.1
T
J
=25°C
(A)
0.1
1
0.01
SK39A - SK320A
Pulse width
Pulse width=300μs
1% duty cycle
0.8
0.9
1
1.1
0.01
SK32A - SK36A, 25°C
0.001
0
20
40
60
80
100
0.001
0.1
0
0.3
0.4
0.5
0.6
0.7
1.2
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FORWARD VOLTAGE (V)
4
Version:T1705
4
SK32A - SK320A
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.5 Maximum Non-repetitive Forward Surge Current
TRANSIENT THERMAL IMPEDANCE A (℃/W)
70
PEAK FORWARD SURGE CURRENT (A)
60
50
40
30
20
10
0
1
10
100
Fig.6 Typical Transient Thermal Characteristics
100
8.3ms Single Half Sine Wave
10
1
0.1
0.01
0.1
1
T-PULSE DURATION(s)
10
100
NUMBER OF CYCLES AT 60 Hz
5
Version:T1705
Microchip MCU
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