DE475-501N44A
RF Power MOSFET
♦
♦
♦
♦
♦
N-Channel Enhancement Mode
Low Q
g
and R
g
High dv/dt
Nanosecond Switching
30MHz Maximum Frequency
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
c
= 25°C
T
c
= 25°C, pulse width limited by T
JM
T
c
= 25°C
T
c
= 25°C
I
S
≤
I
DM
, di/dt
≤
100A/µs, V
DD
≤
V
DSS
,
T
j
≤
150°C, R
G
= 0.2Ω
I
S
= 0
V
DSS
I
D25
R
DS(on)
Maximum Ratings
500
500
±20
±30
48
288
44
30
V
V
V
V
A
A
A
mJ
=
=
≤
=
500 V
48 A
0.13
Ω
1800W
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt
P
DC
P
DHS
P
DAMB
R
thJC
R
thJHS
Symbol
P
DC
5 V/ns
>200 V/ns
1800
W
W
W
C/W
C/W
SG1
SG2
SD1
SD2
GATE
DRAIN
T
c
= 25°C
Derate 4.0W/°C above 25°C
T
c
= 25°C
730
4.5
0.08
0.20
Features
Test Conditions
Characteristic Values
T
J
= 25°C unless otherwise specified
min.
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
T
J
T
JM
T
stg
T
L
Weight
1.6mm (0.063 in) from case for 10 s
V
GS
= 0 V, I
D
= 3 ma
V
DS
= V
GS
, I
D
= 4 ma
V
GS
= ±20 V
DC
, V
DS
= 0
V
DS
= 0.8 V
DSS
T
J
= 25°C
V
GS
= 0
T
J
= 125°C
V
GS
= 15 V, I
D
= 0.5I
D25
Pulse test, t
≤
300µS, duty cycle d
≤
2%
V
DS
= 15 V, I
D
= 0.5I
D25
, pulse test
typ.
max.
V
•
Isolated Substrate
−
high isolation voltage (>2500V)
−
excellent thermal transfer
−
Increased temperature and power
V
•
•
−
−
•
•
•
cycling capability
IXYS advanced low Q
g
process
Low gate charge and capacitances
easier to drive
faster switching
Low R
DS(on)
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other haz-
ardous materials
500
3.5
4.5
5.5
±100
50
1
0.13
14
-55
175
-55
300
3
+175
+175
nA
µA
mA
Ω
S
°C
°C
°C
°C
g
Advantages
•
Optimized for RF and high speed
•
•
High power density
switching at frequencies to 30MHz
Easy to mount—no insulators needed
DE475-501N44A
RF Power MOSFET
Symbol
Test Conditions
Characteristic Values
(
T
J
= 25°C unless otherwise specified
)
min.
R
G
C
iss
C
oss
C
rss
C
stray
T
d(on)
T
on
T
d(off)
T
off
Q
g(on)
Q
gs
Q
gd
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
T
rr
Q
RM
I
RM
I
F
= I
S
, -di/dt = 100A/µs,
V
R
= 100V
V
GS
= 10 V, V
DS
= 0.5 V
DSS
I
D
= 0.5 I
D25
V
GS
= 15 V, V
DS
= 0.8 V
DSS
I
D
= 0.5 I
DM
R
G
= 0.2
Ω
(External)
Back Metal to any Pin
V
GS
= 0 V, V
DS
= 0.8 V
DSS(max)
,
f = 1 MHz
typ.
0.3
5100
300
92
46
5
5
5
8
155
35
87
max.
Ω
pF
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Characteristic Values
(
T
J
= 25°C unless otherwise specified
)
min.
max.
44
288
1.5
200
0.6
14
A
A
V
ns
µC
A
Test Conditions
V
GS
= 0 V
Repetitive; pulse width limited by T
JM
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
≤
300
µs,
duty cycle
≤
2%
CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device.
Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information pub-
lished in this document at any time and without notice.
For detailed device mounting and installation instructions, see the “Device
Installation & Mounting Instructions”
technical note on the
IXYSRF web site at;
http://www.ixysrf.com/pdf/switch_mode/appnotes/7de_series_mosfet_installation_instructions.pdf
IXYS RF reserves the right to change limits, test conditions and dimensions.
IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
4,835,592
5,034,796
5,381,025
4,860,072
5,049,961
5,640,045
4,881,106
5,063,307
4,891,686
5,187,117
4,931,844
5,237,481
5,017,508
5,486,715
DE475-501N44A
RF Power MOSFET
Fig. 1
160
140
Typical Transfer Characteristics
V
DS
= 50V, PW = 15 S
Fig. 2
Typical Output Characteristics
50
8V - 15V
7.5V
I
D
, Drain Current (A)
120
100
80
60
40
20
0
5
6
7
8
9
10
11
12
13
14
15
I
D
, Drain Currnet (A)
25
7V
6.5V
6V
0
0
10
20
30
40
50
60
70
80
90 100 110 120
V
GS
, Gate-to Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig. 3
Gate Charge vs. Gate-to-Source Voltage
V
DS
= 250V, I
D
= 22A
16
Gate-to-Source Voltage (V)
14
12
10
8
6
4
2
0
0
50
100
150
200
250
Gate Charge (nC)
Fig. 4
Extended Typical Output Characteristics
250
200
150
100
50
0
0
10
20
30
40
50
60 70
80
90 100 110 120
Bottom
Top
10-15V
9V
8.5V
8V
7.5V
7V
6.5V
I
D
, Drain Currnet (A)
Fig. 5
V
DS
, Drain-to-Source Voltage (V)
V
D S
vs.
Capacitance
10000
C
iss
Capacitance (pF)
1000
C
oss
C
rss
100
10
0
100
200
300
400
V
DS
Voltage (V)
DE475-501N44A
RF Power MOSFET
Fig. 6 Package Drawing
Source
Source
Gate
Drain
Source
Source
DE475-501N44A
RF Power MOSFET
501N44A DE-SERIES SPICE Model
(Preliminary)
The DE-SERIES SPICE Model is illustrated in Figure 7. The model is an expansion of the SPICE
level 3 MOSFET model. It includes the stray inductive terms L
G
, L
S
and L
D
. Rd is the R
DS(ON)
of the
device, Rds is the resistive leakage term. The output capacitance, C
OSS
, and reverse transfer ca-
pacitance, C
RSS
are modeled with reversed biased diodes. This provides a varactor type response
necessary for a high power device model. The turn on delay and the turn off delay are adjusted via
Ron and Roff.
Figure 7 DE-SERIES SPICE Model
This SPICE model may be downloaded as a text file from the IXYSRF web site at
http://www.ixysrf.com/products/switch_mode.html
http://www.ixysrf.com/spice/de475-501n44a.html
Net List:
.SUBCKT 501N44A 10 20 30
* TERMINALS: D G S
* 500 Volt 44 Amp 0.13 ohm N-Channel Power MOSFET
* REV.A 01-09-02
M1 1 2 3 3 DMOS L=1U W=1U
RON 5 6 0.3
DON 6 2 D1
ROF 5 7 .1
DOF 2 7 D1
D1CRS 2 8 D2
D2CRS 1 8 D2
CGS 2 3 5.2N
RD 4 1 0.13
DCOS 3 1 D3
RDS 1 3 5.0MEG
LS 3 30 .5N
LD 10 4 1N
LG 20 5 1N
.MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=3.8)
.MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N)
.MODEL D2 D (IS=.5F CJO=400P BV=500 M=.4 VJ=.6 TT=400N RS=10M)
.MODEL D3 D (IS=.5F CJO=900P BV=500 M=.3 VJ=.4 TT=400N RS=10M)
.ENDS
Doc #9200-0248 Rev 6
© 2009 IXYS RF
An
IXYS
Company
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