SIDC14D65C8
Fast switching diode chip in EMCON 3 -Technology
Recommended for:
•
Power module
•
Discrete components
Applications:
•
Drives
•
White goods
•
Resonant applications
A
Features:
•
650V EMCON 3 technology 65 µm chip
•
Soft, fast switching
•
Low reverse recovery charge
•
Small temperature coefficient
•
Qualified according to JEDEC for target
applications
C
Chip Type
SIDC14D65C8
1)
V
R
650V
I
Fn
1 )
50A
Die Size
4.6 x 3.05 mm
2
Package
sawn on foil
nominal forward current at Tc = 100°C,
not subject to production test - verified by design/characterisation
Mechanical Parameters
Die size
Area total
Anode pad size
Thickness
Wafer size
Max. possible chips per wafer
Passivation frontside
Pad metal
Backside metal
Die bond
Wire bond
Reject ink dot size
for original and
sealed MBB bags
Storage environment
for open MBB bags
4.6 x 3.05
14.03
3.9 x 2.35
65
200
1960
Photoimide
3200 nm AlSiCu
Ni Ag –system
Electrically conductive epoxy glue and soft solder
Al,
≤500µm
∅
0.65mm; max 1.2mm
Ambient atmosphere air, Temperature 17°C – 25°C,
< 6 month
Acc. to IEC62258-3: Atmosphere >99% Nitrogen or inert gas,
Humidity <25%RH, Temperature 17°C – 25°C, < 6 month
µm
mm
mm
2
Edited by INFINEON Technologies, IFAG IMM PSD D, L4024C, Edition 1.0, 12.09.2011
SIDC14D65C8
Maximum Ratings
Parameter
Repetitive peak reverse voltage
Continuous forward current
Maximum repetitive forward current²
Operating junction temperature
1)
2)
Symbol
V
RRM
I
F
)
Condition
T
vj
= 25 °C
T
vj
< 150°C
T
vj
< 150°C
Value
650
1)
Unit
V
A
°C
I
FRM
T
vj
100
-40...+175
depending on thermal properties of assembly
not subject to production test - verified by design/characterisation
Static Characteristics
(tested on wafer),
T
vj
= 25 °C
Parameter
Reverse leakage current
Cathode-Anode breakdown
Voltage
Forward voltage drop
Symbol
I
R
V
BR
V
F
Conditions
V
R
=65 0 V
I
R
=0 .25m A
I
F
=50A
650
1.18
1.55
1.82
Value
min.
typ.
max.
0.6
Unit
µA
V
Electrical Characteristics
(not subject to production test - verified by design/characterization)
Parameter
Forward voltage drop
Symbol
V
F
Conditions
I
F
=50A,
T
vj
= 150°C
Value
min.
typ.
1.45
max.
Unit
V
Further Electrical Characteristics
Switching characteristics and thermal properties are depending strongly on module design and mounting
technology and can therefore not be specified for a bare die.
This chip data sheet refers to the device data sheet
FS50R07N2E4_B11
Rev. 2.0
Edited by INFINEON Technologies, IFAG IMM PSD D, L4024C, Edition 1.0, 12.09.2011
SIDC14D65C8
Chip Drawing
A
A: Anode pad
Edited by INFINEON Technologies, IFAG IMM PSD D, L4024C, Edition 1.0, 12.09.2011
SIDC14D65C8
Description
AQL 0,65 for visual inspection according to failure catalogue
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Revision History
Version
Subjects (major changes since last revision)
Date
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2011 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or
any information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the
types in question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
systems and/or automotive, aviation and aerospace applications or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the
failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted in the
human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable
to assume that the health of the user or other persons may be endangered.
Edited by INFINEON Technologies, IFAG IMM PSD D, L4024C, Edition 1.0, 12.09.2011
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