DE475-102N20A
RF Power MOSFET
N-Channel Enhancement Mode
Low Q
g
and R
g
High dv/dt
Nanosecond Switching
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt
P
DC
P
DHS
P
DAMB
R
thJC
R
thJHS
Symbol
Test Conditions
T
c
= 25°C
Derate 4.4W/°C above 25°C
T
c
= 25°C
V
DSS
I
D25
Maximum Ratings
1000
1000
±20
±30
20
120
20
30
5
>200
1800
730
4.5
0.08
0.20
Characteristic Values
T
J
= 25°C unless otherwise specified
=
=
≤
=
1000 V
20 A
0.6
Ω
1800W
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
c
= 25°C
T
c
= 25°C, pulse width limited by T
JM
T
c
= 25°C
T
c
= 25°C
I
S
≤
I
DM
, di/dt
≤
100A/µs, V
DD
≤
V
DSS
,
T
j
≤
150°C, R
G
= 0.2Ω
I
S
= 0
R
DS(on)
P
DC
V
V
V
V
A
A
A
mJ
V/ns
V/ns
W
W
W
C/W
C/W
SG1
GATE
DRAIN
SG2
SD1
SD2
Features
min.
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
T
J
T
JM
T
stg
T
L
Weight
1.6mm (0.063 in) from case for 10 s
V
GS
= 0 V, I
D
= 3 ma
V
DS
= V
GS
, I
D
= 250 a
V
GS
= ±20 V
DC
, V
DS
= 0
V
DS
= 0.8 V
DSS
T
J
= 25°C
V
GS
= 0
T
J
= 125°C
V
GS
= 15 V, I
D
= 0.5I
D25
Pulse test, t
≤
300µS, duty cycle d
≤
2%
V
DS
= 15 V, I
D
= 0.5I
D25
, pulse test
typ.
max.
V
•
Isolated Substrate
−
high isolation voltage (>2500V)
−
excellent thermal transfer
−
Increased temperature and power
V
nA
•
•
−
−
•
•
•
cycling capability
IXYS advanced low Q
g
process
Low gate charge and capacitances
easier to drive
faster switching
Low R
DS(on)
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other
hazardous materials
1000
3.0
3.6
5.0
±100
50
µA
1 mA
0.6
6
-55
150
-55
300
3
+150
9
+150
Ω
S
°C
°C
°C
°C
g
Advantages
•
Optimized for RF and high speed
•
•
High power density
switching at frequencies to 30MHz
Easy to mount—no insulators needed
DE475-102N20A
RF Power MOSFET
Symbol
Test Conditions
Characteristic Values
min.
typ.
0.3
6200
V
GS
= 0 V, V
DS
= 0.8 V
DSS(max)
,
f = 1 MHz
(
T
J
= 25°C unless otherwise specified
)
R
G
C
iss
C
oss
C
rss
C
stray
T
d(on)
T
on
T
d(off)
T
off
Q
g(on)
Q
gs
Q
gd
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
T
rr
Q
RM
I
RM
I
F
= I
S
, -di/dt = 100A/µs,
V
R
= 100V
V
GS
= 10 V, V
DS
= 0.5 V
DSS
I
D
= 0.5 I
D25
V
GS
= 15 V, V
DS
= 0.8 V
DSS
I
D
= 0.5 I
DM
R
G
= 0.2
Ω
(External)
Back Metal to any Pin
max.
Ω
pF
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
185
44
46
5
5
5
8
145
28
68
Characteristic Values
(
T
J
= 25°C unless otherwise specified
)
min.
typ.
max.
20
120
1.5
200
0.6
14
Test Conditions
V
GS
= 0 V
Repetitive; pulse width limited by T
JM
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
≤
300
µs,
duty cycle
≤
2%
A
A
V
ns
µC
A
CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device.
Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information pub-
lished in this document at any time and without notice.
For detailed device mounting and installation instructions, see the “Device
Installation & Mounting Instructions”
technical note on the
IXYSRF web site at;
http://www.ixysrf.com/pdf/switch_mode/appnotes/7de_series_mosfet_installation_instructions.pdf
IXYS RF reserves the right to change limits, test conditions and dimensions.
IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
4,835,592
5,034,796
5,381,025
4,860,072
5,049,961
5,640,045
4,881,106
5,063,307
4,891,686
5,187,117
4,931,844
5,237,481
5,017,508
5,486,715
DE475-102N20A
RF Power MOSFET
Fig. 1
60
50
Typical Transfer Characteristics
V
DS
= 50V, PW = 15 S
Fig. 2
40
Typical Output Characteristics
Top
I
D
, Drain Current (A)
40
30
20
10
0
4
5
6
7
8
9
10
11
12
I
D
, Drain Currnet (A)
30
Bottom
8-10V
7.5V
7V
6.5V
6V
5.5V
5V
20
10
0
0
10
20
30
40
50
60
70
80
90
100 110 120
V
GS
, Gate-to Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig. 3
Gate Charge vs. Gate-to-Source Voltage
V
GS
= 500V, I
D
= 10A, Ig = 4m A
16
Fig. 4
Extended Typical Output Characteristics
Gate-to-Source Voltage (V)
14
12
10
8
6
4
2
0
0
50
100
150
200
250
80
Top
9-10V
8V
7.5V
7V
6.5V
6V
5.5V
I
D
, Drain Currnet (A)
60
Bottom
40
20
0
0
25
50
75
100
125
Fig. 5
Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
V
D S
vs.
Capacitance
10000
C
iss
Capacitance (pF)
1000
C
oss
100
10
C
rss
1
0
100
200
300
400
500
600
700
800
V
DS
Voltage (V)
DE475-102N20A
RF Power MOSFET
Fig. 6 Package Drawing
Source
Source
Gate
Drain
Source
Source
DE475-102N20A
RF Power MOSFET
102N20A DE-SERIES SPICE Model
The DE-SERIES SPICE Model is illustrated in Figure 7. The model is an expansion of the SPICE
level 3 MOSFET model. It includes the stray inductive terms L
G
, L
S
and L
D
. Rd is the R
DS(ON)
of the
device, Rds is the resistive leakage term. The output capacitance, C
OSS
, and reverse transfer ca-
pacitance, C
RSS
are modeled with reversed biased diodes. This provides a varactor type response
necessary for a high power device model. The turn on delay and the turn off delay are adjusted
via Ron and Roff.
Figure 7 DE-SERIES SPICE Model
This SPICE model may be downloaded as a text file from the IXYSRF web site at
http://www.ixysrf.com/products/switch_mode.html
http://www.ixysrf.com/spice/de475-102n20a.html
Net List:
.SUBCKT 102N20A 10 20 30
* TERMINALS: D G S
* 1000 Volt 20 Amp 0.6 ohm N-Channel Power MOSFET
* REV.A 10-29-01
M1 1 2 3 3 DMOS L=1U W=1U
RON 5 6 0.5
DON 6 2 D1
ROF 5 7 .1
DOF 2 7 D1
D1CRS 2 8 D2
D2CRS 1 8 D2
CGS 2 3 6.2N
RD 4 1 0.5
DCOS 3 1 D3
RDS 1 3 5.0MEG
LS 3 30 .5N
LD 10 4 1N
LG 20 5 1N
.MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=3.8)
.MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N)
.MODEL D2 D (IS=.5F CJO=400P BV=1000 M=.4 VJ=.6 TT=400N RS=10M)
.MODEL D3 D (IS=.5F CJO=900P BV=1000 M=.3 VJ=.4 TT=400N RS=10M)
.ENDS
Doc #9200-0238 Rev 6
© 2009 IXYS RF
An
IXYS
Company
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Fort Collins, CO USA 80526
970-493-1901 Fax: 970-493-1903
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