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1N4448W RH

产品描述Diodes - General Purpose, Power, Switching Switching diode 400mW
产品类别半导体    分立半导体   
文件大小217KB,共4页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
下载文档 详细参数 选型对比 全文预览

1N4448W RH概述

Diodes - General Purpose, Power, Switching Switching diode 400mW

1N4448W RH规格参数

参数名称属性值
Product AttributeAttribute Value
制造商
Manufacturer
Taiwan Semiconductor
产品种类
Product Category
Diodes - General Purpose, Power, Switching
产品
Product
General Purpose Diodes

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1N4148W/1N4448W/1N914BW
Taiwan Semiconductor
Small Signal Product
400mW High Speed SMD Switching Diode
FEATURES
- Fast switching device (trr<4.0ns)
- Surface Mount Device Type
- Moisture sensitivity level 1
- Matte Tin (Sn) lead finish with Nickel (Ni) underplate
- Pb free version and RoHS compliant
- Packing code with suffix "G" means
green compound (halogen-free)
SOD-123F
MECHANICAL DATA
- Case: Flat lead SOD-123F small outline plastic package
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
- Polarity: Indicated by cathode band
- Weight: 8.85 ± 0.5mg
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Power Dissipation
Reverse Voltage
Repetitive Peak Reverse Voltage
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Surge Current @ t=1.0μs
Forward Current
Thermal Resistance (Junction to Ambient) (Note 1)
Junction and Storage Temperature Range
PARAMETER
Reverse Voltage
Forward Voltage
1N4448W, 1N914BW
1N4148W
1N4448W, 1N914BW
Reverse Leakage Current
Junction Capacitance
Reverse Recovery Time
I
F
=5.0mA
I
F
=10.0mA
I
F
=100.0mA
V
R
=20V
V
R
=75V
V
R
=0, f=1.0MHz
(Note 2)
I
R
C
J
t
rr
V
F
0.62
-
-
-
-
-
-
0.72
1.0
1.0
25
5.0
4.0
4.0
nA
μA
pF
ns
V
I
R
=100μA
I
R
=5μA
SYMBOL
P
D
V
R
V
RRM
I
FRM
I
FSM
I
F
R
θJA
T
J
, T
STG
SYMBOL
V
R
MIN
100
75
VALUE
400
100
75
300
2
150
450
-65 to +150
MAX
-
-
o
UNIT
mW
V
V
mA
A
mA
C/W
o
C
UNIT
V
Notes 1: Test Condition : 8.3ms Single half Sine-Wave Superimposed on Rated Load
Notes 2: Reverse Recovery Test Conditions : I
F
=10mA, I
R
=60mA, R
L
=100Ω, I
RR
=1mA
Document Number: DS_S1412035
Version: J15

1N4448W RH相似产品对比

1N4448W RH 1N4148W 1N4448W 1N4448W RHG 1N4148W RH 1N4148W RHG
描述 Diodes - General Purpose, Power, Switching Switching diode 400mW Diodes - General Purpose, Power, Switching Switching diode 400 mW Diodes - General Purpose, Power, Switching Switching diode 400 mW Diodes - General Purpose, Power, Switching Switching diode 400mW Diodes - General Purpose, Power, Switching Switching diode 400mW Diodes - General Purpose, Power, Switching Switching diode 400mW
Product Attribute Attribute Value - - Attribute Value Attribute Value Attribute Value
制造商
Manufacturer
Taiwan Semiconductor - - Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor
产品种类
Product Category
Diodes - General Purpose, Power, Switching - - Diodes - General Purpose, Power, Switching Diodes - General Purpose, Power, Switching Diodes - General Purpose, Power, Switching
产品
Product
General Purpose Diodes - - Switching Diodes Rectifiers Rectifiers

 
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