c. Maximum under steady state conditions is 84 °C/W
d. T
C
= 25 °C
S17-1737-Rev. A, 20-Nov-17
SYMBOL
R
thJA
R
thJF
TYPICAL
36
16
MAXIMUM
43
21
UNIT
°C/W
Document Number: 76230
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si4434ADY
www.vishay.com
Vishay Siliconix
SYMBOL
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Q
oss
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 2.3 A, di/dt = 100 A/μs, T
J
= 25 °C
I
S
= 2.3 A, V
GS
= 0 V
T
C
= 25 °C
V
DD
= 125 V, R
L
= 54.4
,
I
D
2.3 A,
V
GEN
= 7.5 V, R
g
= 1
V
DD
= 125 V, R
L
= 54.4
,
I
D
2.3 A,
V
GEN
= 10 V, R
g
= 1
V
DS
= 125 V, V
GS
= 0 V
f = 1 MHz
V
DS
= 125 V, V
GS
= 10 V, I
D
= 2 A
V
DS
= 125 V, V
GS
= 7.5 V, I
D
= 2 A
V
DS
= 125 V, V
GS
= 0 V, f = 1 MHz
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 250 V, V
GS
= 0 V
V
DS
= 250 V, V
GS
= 0 V, T
J
= 70 °C
V
DS
10 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 2.8 A
V
GS
= 7.5 V, I
D
= 2.7 A
V
DS
= 10 V, I
D
= 2.8 A
MIN.
250
-
-
2
-
-
-
10
-
-
-
-
-
-
-
-
-
-
-
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
254
-6.9
-
-
-
-
-
0.125
0.135
10
600
65
2
10.9
8.6
2.7
2.9
30
2.3
8
22
18
22
10
22
18
25
-
-
0.8
100
356
65
35
MAX.
-
-
-
4
± 100
1
10
-
0.150
0.170
-
-
-
-
16.5
12.9
-
-
45
4.6
16
35
30
35
20
40
30
50
5
25
1.2
150
550
-
-
ns
nC
pF
UNIT
V
mV/°C
V
nA
μA
A
S
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-source breakdown voltage
V
DS
temperature coefficient
V
GS(th)
temperature coefficient
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current
a
Drain-source on-state resistance
a
Forward transconductance
a
Dynamic
b
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Output charge
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
Pulse diode forward current
Body diode voltage
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
A
V
ns
nC
ns
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S17-1737-Rev. A, 20-Nov-17
Document Number: 76230
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si4434ADY
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
25
V
GS
= 10 V thru 6 V
Vishay Siliconix
Axis Title
10000
25
10000
20
2nd line
I
D
- Drain Current (A)
2nd line
I
D
- Drain Current (A)
1000
V
GS
= 5 V
20
T
C
= 125 °C
1000
1st line
2nd line
1st line
2nd line
15
15
10
100
5
V
GS
= 4 V
10
T
C
= 25 °C
100
5
T
C
= -55 °C
0
0
1
2
3
4
5
V
DS
- Drain-to-Source Voltage (V)
2nd line
10
0
0
1
2
3
4
5
6
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
Output Characteristics
Transfer Characteristics
Axis Title
0.20
10000
900
Axis Title
10000
2nd line
R
DS(on)
- On-Resistance (Ω)
0.18
2nd line
C - Capacitance (pF)
1000
1st line
2nd line
0.16
600
C
iss
1000
1st line
2nd line
0.14
V
GS
= 7.5 V
V
GS
= 10 V
100
300
C
oss
C
rss
100
0.12
0.1
0
5
10
15
20
25
I
D
- Drain Current (A)
2nd line
10
0
0
50
100
150
200
250
V
DS
- Drain-to-Source Voltage (V)
2nd line
10
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
Axis Title
10
I
D
= 2 A
V
DS
= 125 V
Axis Title
10000
2nd line
R
DS(on)
- On-Resistance (Normalized)
2.5
V
GS
= 10 V, I
D
= 2.8 A
10000
2nd line
V
GS
- Gate-to-Source Voltage (V)
8
V
DS
= 63 V
2.0
1000
1.5
V
GS
= 7.5 V, 2.7 A
1000
1st line
2nd line
4
V
DS
= 200 V
100
2
100
1.0
0
0
3
6
9
12
Q
g
- Total Gate Charge (nC)
2nd line
10
0.5
-50
-25
0
25
50
75
100 125 150
T
J
- Junction Temperature (°C)
2nd line
10
Gate Charge
On-Resistance vs. Junction Temperature
S17-1737-Rev. A, 20-Nov-17
Document Number: 76230
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1st line
2nd line
6
Si4434ADY
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
100
10000
0.4
Axis Title
10000
Vishay Siliconix
10
2nd line
I
S
- Source Current (A)
T
J
= 150 °C
2nd line
R
DS(on)
- On-Resistance (Ω)
0.3
1000
1st line
2nd line
T
J
= 150 °C
1000
1st line
2nd line
1
T
J
= 25 °C
0.2
T
J
= 25 °C
0.1
100
0.01
100
0.1
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
2nd line
10
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Axis Title
3.4
I
D
= 250 μA
10000
30
25
2nd line
V
GS(th)
(V)
3.0
Power (W)
1000
1st line
2nd line
2.6
100
2.2
20
15
10
5
1.8
-50
-25
0
25
50
75
100 125 150
T
J
- Temperature (°C)
2nd line
10
0
10
-
2
10
-
1
1
Time (s)
10
100
600
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
Axis Title
100
I
DM
limited
Limited by
R
DS(on)
10000
10
2nd line
I
D
- Drain Current (A)
100 μs
1 ms
10 ms
1000
1st line
2nd line
100
1
0.1
100 ms
10 s, 1 s
0.01
T
A
= 25 °C
Single pulse
BVDSS limited
DC
0.001
0.1
(1)
1
10
100
10
1000
V
DS
- Drain-to-Source Voltage (V)
V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
S17-1737-Rev. A, 20-Nov-17
Document Number: 76230
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si4434ADY
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
5
10000
Vishay Siliconix
4
2nd line
I
D
- Drain Current (A)
1000
1st line
2nd line
100
1
10
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
2nd line
3
2
0
Current Derating
a
8
2
6
1.5
Power (W)
4
Power (W)
0
25
50
75
100
125
150
1
2
0.5
0
T
C
- Case Temperature (°C)
0
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
Note
a. The power dissipation P
D
is based on T
J
max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
S17-1737-Rev. A, 20-Nov-17
Document Number: 76230
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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