SMCJ5.0(A) - SMCJ170(A)
Taiwan Semiconductor
1500W, 5V - 170V Surface Mount Transient Voltage Suppressor
FEATURES
●
●
●
●
●
●
Low profile package
Ideal for automated placement
Glass passivated junction
Built-in strain relief
Excellent clamping capability
Fast response time: Typically less than
1.0ps from 0 volt to BV min
● Typical I
R
less than 1μA above 10V
● Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
V
WM
V
BR
P
PK
T
J MAX
Package
Configuration
VALUE
5 - 170
6.4 - 209
1500
150
UNIT
V
V
W
°C
DO-214AB (SMC)
Single die
APPLICATIONS
● Immunization of sensitive devices in automotive,
telecommunications, consumer electronics, and industrial
equipment from electrostatic discharge (ESD) and transient
voltages induced by load switching and lightning.
MECHANICAL DATA
●
●
●
●
●
●
●
●
Case：DO-214AB (SMC)
Molding compound meets UL 94V-0 flammability rating
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound
(halogen-free)
Moisture sensitivity level: level 1, per J-STD-020
Terminal：Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 2 whisker test
Polarity：As marked
DO-214AB (SMC)
● Weight： 0.21 g (approximately)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Peak power dissipation at T
A
=25°C, Tp=1ms
(1)
SYMBOL
P
PK
P
D
I
FSM
V
F
T
J
VALUE
1500
5
200
3.5 /5.0
-55 to +150
UNIT
W
W
A
V
°C
°C
Steady state power dissipation at T
A
=25°C
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
(2)
Forward Voltage @ I
F
=100A for Unidirectional only
Junction temperature
Storage temperature
T
STG
-55 to +150
Notes:
1. Non-repetitive current pulse per Fig. 3 and derated above T
A
=25°C per Fig. 2
2. V
F
=3.5V on SMCJ5.0 - SMCJ90 devices and V
F
=5.0V on SMCJ100 - SMCJ170 devices
Devices for bipolar applications
1. For bidirectional use C or CA suffix for Types SMCJ5.0 - Types SMCJ170
2. Electrical characteristics apply in both directions
1
Version:P1708
SMCJ5.0(A) - SMCJ170(A)
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
Breakdown voltage
V
BR
@I
T
(V)
MIN.
31.1
33.3
33.3
36.7
36.7
40
40
44.4
44.4
47.8
47.8
50
50
53.3
53.3
56.7
56.7
60
60
64.4
64.4
66.7
66.7
71.1
71.1
77.8
77.8
83.3
83.3
86.7
86.7
94.4
94.4
100
100
111
111
122
122
133
133
144
144
167
167
178
178
189
189
MAX.
34.4
40.7
36.8
44.9
40.6
48.9
44.2
54.3
49.1
58.4
52.8
61.1
55.3
65.1
58.9
69.3
62.7
73.3
66.3
78.7
71.2
81.5
73.7
86.9
78.6
95.1
86
102
92.1
106
95.8
115
104
122
111
136
123
149
135
163
147
176
159
204
185
218
197
231
209
Test
current
I
T
(mA)
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Working
stand-off
voltage
V
WM
(V)
28
30
30
33
33
36
36
40
40
43
43
45
45
48
48
51
51
54
54
58
58
60
60
64
64
70
70
75
75
78
78
85
85
90
90
100
100
110
110
120
120
130
130
150
150
160
160
170
170
Maximum
Maximum
peak impulse
Reverse
current
Leakage
(Note
(Note 2)
3)
I
PPM
I
R
@V
WM
(µA)
(A)
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
34
29
32
26
29
24
27
22
24
20
22
19
21
18
20
17
19
16
18
15
16
14
16
13.8
15
12.6
13.9
11.7
13
11.3
12.5
10.4
11.5
9.8
10.7
8.8
9.7
8
8.9
7.3
8.1
6.8
7.5
5.8
6.4
5.4
6
5.1
5.7
Maximum
clamping
voltage
(Note 5)
V
C
@I
PPM
(V)
45.4
53.5
48.4
59.0
53.3
64.3
58.1
71.4
64.5
76.7
69.4
80.3
72.7
85.5
77.4
91.1
82.4
96.3
87.1
103
93.6
107
96.8
114
103
125
113
134
121
139
126
151
137
160
146
179
162
196
177
214
193
231
209
266
243
287
259
304
275
Part number
Marking
code
SMCJ28A
SMCJ30
SMCJ30A
SMCJ33
SMCJ33A
SMCJ36
SMCJ36A
SMCJ40
SMCJ40A
SMCJ43
SMCJ43A
SMCJ45
SMCJ45A
SMCJ48
SMCJ48A
SMCJ51
SMCJ51A
SMCJ54
SMCJ54A
SMCJ58
SMCJ58A
SMCJ60
SMCJ60A
SMCJ64
SMCJ64A
SMCJ70
SMCJ70A
SMCJ75
SMCJ75A
SMCJ78
SMCJ78A
SMCJ85
SMCJ85A
SMCJ90
SMCJ90A
SMCJ100
SMCJ100A
SMCJ110
SMCJ110A
SMCJ120
SMCJ120A
SMCJ130
SMCJ130A
SMCJ150
SMCJ150A
SMCJ160
SMCJ160A
SMCJ170
SMCJ170A
GFG
GFH
GFK
GFL
GFM
GFN
GFP
GFQ
GFR
GFS
GFT
GFU
GFV
GFW
GFX
GFY
GFZ
GGD
GGE
GGF
GGG
GGH
GGK
GGL
GGM
GGN
GGP
GGQ
GGR
GGS
GGT
GGU
GGV
GGW
GGX
GGY
GGZ
GHD
GHE
GHF
GHG
GHH
GHK
GHL
GHM
GHN
GHP
GHQ
GHR
Notes:
1. V
BR
measure after I
T
applied for 300μs, I
T
=square wave pulse or equivalent
2. Surge current waveform per Figure. 3 and derate per Figure. 2
3. For bipolar types having V
WM
of 10 volts and under, the I
R
limit is doubled
4. All terms and symbols are consistent with ANSI/IEEE C62.35
3
Version:P1708
SMCJ5.0(A) - SMCJ170(A)
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.1 Peak Pulse Power Rating Curve
PEAK PULSE POWER (P
PPM
) OR CURRENT(I
PP
)
DERATING IN PERCENTAGE (%)
100
NON-REPETITIVE
PULSE
WAVEFORM
SHOWN in FIG.3
10
125
Fig.2 Pulse Derating Curve
P
PPM
, PEAK PULSE POWER (KW)
100
75
50
1
25
0.1
0.1
1
10
100
tp, PULSE WIDTH, (μs)
1000
10000
0
0
25
50
75
100
125
150
175
°
T
A
, AMBIENT TEMPERATURE ( C)
200
Fig.3 Clamping Power Pulse Waveform
100000
140
120
100
Rise time tr=10μs to 100% of I
PPM
80
60
40
20
0
0
0.5
1
1.5
t, TIME (ms)
2
2.5
3
td
Half value-I
PPM
/2
10/1000μs, waveform
as defined by R.E.A.
Peak value
I
PPM
CJ, JUNCTION CAPACITANCE (pF)
A
Pulse width(td) is defined
as the point where the peak
current decays to 50% of I
PPM
Fig.4 Typical Junction Capacitance
UNIDIRECTIONAL
BIDIRECTIONAL
10000
V
R
=0
1000
100
f=1.0MHz
Vsig=50mVp-p
1
V
R
-RATED
STAND-OFF
VOLTAGE
10
10
V(
BR
), BREAKDOWN VOLTAGE (V)
100
5
Version:P1708
MEMS传感器
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