BT139-600G0
16 February 2016
4Q Triac
Product data sheet
1. General description
Planar passivated four quadrant triac in a SOT78 plastic package intended for use in general
purpose bidirectional switching and phase control applications.
2. Features and benefits
•
•
•
•
•
High voltage capability
Least sensitive gate for highest noise immunity
High minimum IGT for guaranteed immunity to gate noise
Planar passivated for voltage ruggedness and reliability
Triggering in all four quadrants
3. Applications
•
•
General purpose motor controls
General purpose switching
4. Quick reference data
Table 1. Quick reference data
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-
state voltage
RMS on-state current
full sine wave; T
mb
≤ 99 °C;
Fig. 1;
Fig. 2; Fig. 3
Conditions
Min
-
-
-
-
-
V
D
= 12 V; I
T
= 0.1 A;
T2+
G+;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A;
T2+
G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A;
T2-
G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C;
Fig. 7
10
10
10
10
Typ
-
-
-
-
-
-
-
-
-
Max
600
16
155
170
125
50
50
50
100
Unit
V
A
A
A
°C
mA
mA
mA
mA
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
state current
t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
T
j
I
GT
junction temperature
gate trigger current
Static characteristics
WeEn Semiconductors
BT139-600G0
4Q Triac
Symbol
I
H
V
T
dV
D
/dt
Parameter
holding current
on-state voltage
rate of rise of off-state
voltage
rate of change of
commutating current
Conditions
V
D
= 12 V; T
j
= 25 °C;
Fig. 9
I
T
= 20 A; T
j
= 25 °C;
Fig. 10
V
DM
= 402 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
V
D
= 400 V; T
j
= 125 °C; I
T(RMS)
= 16 A;
dV
com
/dt = 20 V/µs; (snubberless
condition); gate open circuit
Min
-
-
200
Typ
-
1.2
-
Max
60
1.6
-
Unit
mA
V
V/µs
Dynamic characteristics
dI
com
/dt
3
14
-
A/ms
5. Pinning information
Table 2. Pinning information
Pin
1
2
3
mb
Symbol Description
T1
T2
G
n.c.
main terminal 1
main terminal 2
gate
mounting base; main
terminal 2
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
1 2 3
TO-220AB (SOT78)
6. Ordering information
Table 3. Ordering information
Type number
BT139-600G0
Package
Name
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
7. Marking
Table 4. Marking codes
Type number
BT139-600G0
Marking code
BT139-600G0
BT139-600G0
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
16 February 2016
2 / 13
WeEn Semiconductors
BT139-600G0
4Q Triac
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state
voltage
RMS on-state current
non-repetitive peak on-
state current
I t for fusing
rate of rise of on-state
current
2
Conditions
Min
-
Max
600
16
155
170
120
50
50
50
10
2
5
0.5
150
125
aaa-016262
Unit
V
A
A
A
A²s
A/µs
A/µs
A/µs
A/µs
A
W
W
°C
°C
full sine wave; T
mb
≤ 99 °C;
Fig. 1; Fig. 2;
Fig. 3
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C; t
p
= 16.7 ms
t
p
= 10 ms; sine-wave pulse
I
G
= 0.2 A
I
G
= 0.2 A
I
G
= 0.2 A
I
G
= 0.2 A
-
-
-
-
-
-
-
-
-
-
I t
dI
T
/dt
2
I
GM
P
GM
P
G(AV)
T
stg
T
j
20
I
T(RMS)
(A)
16
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
aaa-016261
over any 20 ms period
-
-40
-
30
99 °C
I
T(RMS)
(A)
26
12
22
8
18
4
14
0
-50
0
50
100
T
mb
(°C)
150
10
10
-2
10
-1
1
10
surge duration (s)
Fig. 1. RMS on-state current as a function of mounting
base temperature
f = 50 Hz; T
mb
= 99 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
BT139-600G0
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
16 February 2016
3 / 13
WeEn Semiconductors
BT139-600G0
4Q Triac
25
P
tot
(W)
20
α = 180 °C
120 °C
90 °C
15
60 °C
30 °C
10
conduction
angle
(degrees)
30
60
90
120
180
0
4
8
12
16
form
factor
a
4
2.8
2.2
1.9
1.57
20
α
aaa-016263
95
T
mb(max)
(°C)
101
107
113
5
119
0
I
T(RMS)
(A)
125
24
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
160
I
TSM
(A)
120
I
T
aaa-016312
I
TSM
t
1/f
T
j(init)
= 25 °C max
80
40
0
1
10
10
2
number of cycles
10
3
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BT139-600G0
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
16 February 2016
4 / 13
WeEn Semiconductors
BT139-600G0
4Q Triac
10
4
I
TSM
(A)
I
T
aaa-016264
I
TSM
t
10
3
t
p
T
j(init)
= 25 °C max
(1)
10
2
10
10
-5
10
-4
10
-3
10
-2
t
p
(s)
10
-1
t
p
≤ 20 ms
(1) dI
T
/dt limit
Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values
BT139-600G0
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
16 February 2016
5 / 13
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