BFP540FESD
NPN Silicon RF Transistor*
•
For ESD protected high gain low noise amplifier
•
Excellent ESD performance
typical value 1000 V (HBM)
•
Outstanding
G
ms
= 20 dB
Noise Figure
F
= 0.9 dB
•
SIEGET
45 - Line
•
Pb-free (ROHS compliant) package
1)
•
Qualified according AEC Q101
* Short term description
3
4
1
2
ESD
(Electrostatic
discharge)
sensitive device, observe handling precaution!
Type
BFP540FESD
Maximum Ratings
Parameter
Marking
AUs
1=B
Pin Configuration
2=E
3=C
4=E
Symbol
V
CEO
4.5
4
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
A
T
stg
10
10
1
80
8
250
150
Package
-
TSFP-4
Value
Unit
V
-
Collector-emitter voltage
T
A
> 0°C
T
A
≤
0°C
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
2)
T
S
≤
80 °C
Junction temperature
Ambient temperature
Storage temperature
1
Pb-containing
2
T
mA
mW
°C
-65 ... 150
-65 ... 150
package may be available upon special request
S is measured on the collector lead at the soldering point to the pcb
2007-03-23
1
BFP540FESD
Thermal Resistance
Parameter
Junction - soldering point
1)
Symbol
R
thJS
Value
≤
280
Unit
K/W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-emitter cutoff current
V
CE
= 10 V,
V
BE
= 0
Collector-base cutoff current
V
CB
= 5 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 0.5 V,
I
C
= 0
DC current gain
I
C
= 20 mA,
V
CE
= 3.5 V, pulse measured
1
For
Unit
max.
-
10
100
10
170
V
µA
nA
µA
-
typ.
5
-
-
-
110
V
(BR)CEO
I
CES
I
CBO
I
EBO
h
FE
4.5
-
-
-
50
calculation of
R
thJA
please refer to Application Note Thermal Resistance
2007-03-23
2
BFP540FESD
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Unit
Parameter
min.
typ. max.
AC Characteristics
(verified by random sampling)
Transition frequency
f
T
I
C
= 50 mA,
V
CE
= 4 V,
f
= 1 GHz
Collector-base capacitance
V
CB
= 2 V,
f
= 1 MHz,
V
BE
= 0 ,
emitter grounded
Collector emitter capacitance
V
CE
= 2 V,
f
= 1 MHz,
V
BE
= 0 ,
base grounded
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz,
V
CB
= 0 ,
collector grounded
Noise figure
I
C
= 5 mA,
V
CE
= 2 V,
f
= 1.8 GHz,
Z
S
=
Z
Sopt
I
C
= 5 mA,
V
CE
= 2 V,
f
= 3 GHz,
Z
S
=
Z
Sopt
Power gain, maximum stable
1)
I
C
= 20 mA,
V
CE
= 2 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 1.8 GHz
Power gain, maximum available
1)
I
C
= 20 mA,
V
CE
= 2 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 3 GHz
Transducer gain
I
C
= 20 mA,
V
CE
= 2 V,
Z
S =
Z
L =
50
Ω
,
f
=
1
.
8GHz
I
C
= 20 mA,
V
CE
= 2 V,
Z
S =
Z
L =
50
Ω
,
f
=
3GHz
Third order intercept point at output
2)
V
CE
= 2 V,
I
C
= 20 mA,
Z
S =
Z
L =
50
Ω
,
f
=
1
.
8GHz
1dB Compression point at output
I
C
= 20 mA,
V
CE
= 2 V,
Z
S =
Z
L =
50
Ω
,
f
=
1
.
8GHz
1
G
ma
21
-
30
0.16
-
0.26
GHz
pF
C
cb
C
ce
-
0.4
-
C
eb
-
0.55
-
F
-
-
G
ms
-
0.9
1.3
20
1.4
-
-
dB
dB
G
ma
-
14.5
-
dB
|S
21e
|
2
15.5
-
IP
3
P
-1dB
-
-
18
13
24.5
11
-
-
-
-
dB
dBm
= |S
21e
/
S
12e
| (k-(k²-1)
1/2
),
G
ms
= |S
21e
/
S
12e
|
2
IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50
Ω
from 0.1 MHz to 6 GHz
2007-03-23
3
Package TSFP-4
BFP540FESD
Package Outline
1.4
±0.05
0.2
±0.05
1.2
±0.05
0.2
±0.05
4
3
1
2
0.2
±0.05
0.5
±0.05
0.5
±0.05
0.15
±0.05
Foot Print
0.35
0.45
0.5
0.5
Marking Layout (Example)
Manufacturer
0.9
Pin 1
BFP420F
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
1.4
8
Pin 1
1.55
0.7
10˚ MAX.
0.8
±0.05
0.55
±0.04
2007-03-23
4
BFP540FESD
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
2007-03-23
5
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