Product Specification
PE4135
Product Description
The PE4135 is a high linearity passive Quad MOSFET Mixer
for GSM800 & Cellular Base Station Receivers, exhibiting high
dynamic range performance over a broad LO drive range of up
to 20 dBm. This mixer integrates passive matching networks to
provide single-ended interfaces for the RF and LO ports,
eliminating the need for external RF baluns or matching
networks. The PE4135 is optimized for frequency down-
conversion using low-side LO injection for GSM800 & Cellular
Base Station application, and is also suitable for up-conversion
applications.
The PE4135 is manufactured on Peregrine’s UltraCMOS™
process, a patented variation of silicon-on-insulator (SOI)
technology on a sapphire substrate, offering the performance
of GaAs with the economy and integration of conventional
CMOS.
Figure 1. Functional Diagram
High Linearity UltraCMOS™
Quad MOSFET Mixer
Features
•
Integrated, single-ended RF & LO
interfaces
•
High linearity: Typical IIP3 at 32dBm
820 - 920 MHz (+17 dBm LO)
•
Low conversion loss: 6.8 dB
(+17 dBm LO)
•
High isolation: Typical LO-IF at 42 dB,
LO-RF at 32 dB
•
Small 6-lead 3x3 mm DFN package
Figure 2. Package Type
6-lead DFN
LO
180
o
Two-Way
Power
Divider
IF
RF
180
o
Two-Way
Power
Divider
Table 1. Electrical Specifications @ +25 °C
Parameter
1
Frequency Range:
LO
RF
IF
2
Conversion Loss
3
Isolation:
LO-RF
LO-IF
Input IP3
Input 1 dB Compression
Notes:
30
40
29
Minimum
750
820
--
Typical
--
--
70
6.8
32
42
32
21
Maximum
850
920
--
7.3
Units
MHz
MHz
MHz
dB
dB
dB
dBm
dBm
1. Test conditions unless otherwise noted: IF = 70 MHz, LO input drive = 17 dBm, RF input drive = 3 dBm.
2. An IF frequency of 70 MHz is a nominal frequency. The IF frequency can be specified by the user as long as the RF and LO
frequencies are within the specified maximum and minimum.
3. Conversion Loss includes loss of IF transformer (M/A COM ETC1-1-13, nominal loss 0.7 dB at 70 MHz).
Document No. 70-0086-04
│
www.psemi.com
©2005 Peregrine Semiconductor Corp. All rights reserved.
Page 1 of 9
PE4135
Product Specification
Figure 3. Pin Configuration (Top View)
Table 3. Absolute Maximum Ratings
Symbol
T
ST
Parameter/Conditions
Storage temperature
range
Operating temperature
range
LO input power
RF input power
ESD Sensitive Device
Min
-65
-40
Max
150
85
20
12
250
Units
°C
°C
dBm
dBm
V
IF1
GND
LO
1
2
3
6
5
4
IF2
T
OP
GND
P
LO
P
RF
V
ESD
PE4135
RF
Table 2. Pin Descriptions
Pin
No.
1
2
Pin
Name
IF1
GND
Description
IF differential output.
Ground connections for Mixer. Traces
should be physically short and connect
immediately to ground plane for best
performance. The exposed solder pad must
also be soldered to the ground plane for
best performance.
LO Input.
RF Input.
Ground connections for Mixer. Traces
should be physically short and connect
immediately to ground plane for best
performance. The exposed solder pad must
also be soldered to the ground plane for
best performance.
IF differential output.
Absolute Maximum Ratings are those values
listed in the above table. Exceeding these values
may cause permanent device damage.
Functional operation should be restricted to the
limits in the DC Electrical Specifications table.
Exposure to absolute maximum ratings for
extended periods may affect device reliability.
Electrostatic Discharge (ESD) Precautions
When handling this UltraCMOS™ device, observe
the same precautions that you would use with
other ESD-sensitive devices. Although this device
contains circuitry to protect it from damage due to
ESD, precautions should be taken to avoid
exceeding the rating specified in Table 3.
Latch-Up Avoidance
Unlike conventional CMOS devices, UltraCMOS™
devices are immune to latch-up.
3
4
5
LO
RF
GND
6
IF2
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www.psemi.com
©2005 Peregrine Semiconductor Corp. All rights reserved.
Page 2 of 9
PE4135
Product Specification
Evaluation Kit
Figure 4. Evaluation Board Layout
Pin 1
Table 4. Bill of Materials
Reference
T2
R1
U1
J1, J2, J3
Value / Description
M/A Com ETK1-1-13
0Ω
PE4135 MLP Mixer
SMA Connector
Figure 5. Evaluation Board Schematic
3
2
6-lead
MLPM
3 x 3 mm
1
LO
RF
T2
IF
6
4
5
Figure 6. Evaluation Board Testing Block Diagram, 2-Tone Setup
4135
PA
3 dB
Sig
Gen
LO
Eval
Board
IF
3 dB
RF
3 dB
Spectrum
Analyzer
Sig
Gen
6 dB
Hybrid
Tee
6 dB
Sig
Gen
©2005 Peregrine Semiconductor Corp. All rights reserved.
Page 3 of 9
Document No. 70-0086-04
│
UltraCMOS™ RFIC Solutions
PE4135
Product Specification
Typical Performance Data (LO=17 dBm, RF=3 dBm, IF=70 MHz)
Figure 7. Conversion Loss
Figure 8. Input 1dB Compression
0
25
-2
1dB Compression (dB)
20
Conversion Loss (dB)
85 C
15
25 C
-40 C
-4
-6
10
-8
85 C
-10
800
25 C
-40 C
5
825
850
875
Frequency (MHz)
900
925
950
0
800
850
Frequency (MHz)
900
950
Figure 9. Input IP3 @ 25 °C
Figure 10. Output IP3
40
35
30
25
30
25
20
OIP3 (dBm)
858C
15
258C
-408C
IIP3 (dBm)
20
15
10
5
0
800
10
5
825
850
875
Frequency (MHz)
900
925
950
0
800
825
850
875
Frequency (MHz)
900
925
950
Document No. 70-0086-04
│
www.psemi.com
©2005 Peregrine Semiconductor Corp. All rights reserved.
Page 4 of 9
PE4135
Product Specification
Typical Performance Data (LO=17 dBm, RF=3 dBm, IF=70 MHz)
Figure 11. LO-IF Isolation
Figure 12. LO-RF Isolation
0
0
-10
-10
LO-RF Isolation (dB)
LO-IF Isolation (dB)
-20
-20
-30
-30
-40
-50
-40 C
-60
800
825
850
875
Frequency (MHz)
900
25 C
85 C
925
950
-40
-40 C
-50
800
25 C
85 C
825
850
875
Frequency (MHz)
900
925
950
Figure 13. LO Port Return Loss @ 25°C
Figure 14. RF Port Return Loss @ 25°C
0
0
-5
-5
Return Loss (dB)
Return Loss (dB)
-10
-10
-15
-20
-15
-25
-20
200
400
600
800
1000
1200
1400
-30
200
400
600
800
1000
1200
1400
Frequency (MHz)
Frequency (MHz)
©2005 Peregrine Semiconductor Corp. All rights reserved.
Page 5 of 9
Document No. 70-0086-04
│
UltraCMOS™ RFIC Solutions
ARM技术
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