®
BTA16, BTB16 and T16 Series
16A TRIAC
S
A2
SNUBBERLESS™, LOGIC LEVEL & STANDARD
Table 1: Main Features
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
GT (Q
1
)
Value
16
600, 700 and 800
10 to 50
Unit
A
V
mA
A1 A2
G
G
A1
A2
DESCRIPTION
Available either in through-hole or surface-mount
packages, the
BTA16, BTB16
and
T16
triac series
is suitable for general purpose AC switching. They
can be used as an ON/OFF function in applica-
tions such as static relays, heating regulation, in-
duction motor starting circuits... or for phase
control operation in light dimmers, motor speed
controllers, ...
The snubberless versions (BTA/BTB...W and T16
series) are specially recommended for use on in-
ductive loads, thanks to their high commutation
performances. By using an internal ceramic pad,
the BTA series provides voltage insulated tab (rat-
ed at 2500V
RMS
) complying with UL standards
(File ref.: E81734).
D
2
PAK
(T16-G)
A2
A1
A2
G
A1
A2
G
TO-220AB Insulated
(BTA16)
TO-220AB
(BTB16)
Table 2: Order Codes
Part Number
BTA16-xxxxxRG
BTB16-xxxxxRG
T16xx-xxxG
Marking
See page table 8 on
page 8
February 2006
REV. 7
1/9
BTA16, BTB16 and T16 Series
Table 3: Absolute Maximum Ratings
Symbol
I
T(RMS)
Parameter
RMS on-state current (full sine
wave)
D
2
PAK /
TO-220AB
TO-220AB Ins.
I
TSM
I
²
t
dI/dt
Non repetitive surge peak on-state F = 50 Hz
current (full cycle, T
j
initial = 25°C) F = 60 Hz
I
²
t Value for fusing
Critical rate of rise of on-state cur-
rent I
G
= 2 x I
GT
, t
r
≤
100 ns
t
p
= 10 ms
F = 120 Hz
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 125°C
T
c
= 100°C
T
c
= 15°C
t = 20 ms
t = 16.7 ms
160
168
144
50
V
DSM
/V
RSM
+ 100
4
1
- 40 to + 150
- 40 to + 125
A
A
²
s
A/µs
V
A
W
°C
Value
16
Unit
A
V
DSM
/V
RSM
Non repetitive surge peak off-state t
p
= 10 ms
voltage
I
GM
P
G(AV)
T
stg
T
j
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
t
p
= 20 µs
Tables 4: Electrical Characteristics
(T
j
= 25°C, unless otherwise specified)
■
SNUBBERLESS and Logic Level (3 quadrants)
Symbol
I
GT
(1)
V
GT
V
GD
I
H
(2)
I
L
dV/dt (2)
Test Conditions
V
D
= 12 V R
L
= 33
Ω
V
D
= V
DRM
R
L
= 3.3 kΩ
T
j
= 125°C
I
T
= 500 mA
I
G
= 1.2 I
GT
V
D
= 67 %V
DRM
gate open
(dV/dt)c = 0.1 V/µs
I - III
II
Quadrant
I - II - III
I - II - III
I - II - III
MAX.
MAX.
MIN.
MAX.
MAX.
35
50
60
500
-
-
8.5
15
25
30
40
8.5
3.0
-
T16
T1635
35
BTA16 / BTB16
SW
10
1.3
0.2
35
50
60
500
-
-
8.5
50
70
80
1000
-
-
14
A/ms
CW
35
BW
50
Unit
mA
V
V
mA
mA
V/µs
T
j
= 125°C MIN.
T
j
= 125°C
T
j
= 125°C MIN.
T
j
= 125°C
(dI/dt)c (2) (dV/dt)c = 10 V/µs
Without snubber
2/9
BTA16, BTB16 and T16 Series
■
Standard (4 quadrants)
Symbol
I
GT
(1)
V
GT
V
GD
I
H
(2)
I
L
dV/dt (2)
V
D
= V
DRM
R
L
= 3.3 kΩ T
j
= 125°C
I
T
= 500 mA
I
G
= 1.2 I
GT
V
D
= 67 %V
DRM
gate open
I - III - IV
II
T
j
= 125°C
T
j
= 125°C
Test Conditions
Quadrant
I - II - III
IV
ALL
ALL
MAX.
MAX.
MIN.
MAX.
MAX.
MIN.
MIN.
25
40
80
200
5
BTA16 / BTB16
C
25
50
1.3
0.2
50
60
120
400
10
B
50
100
Unit
mA
V
V
mA
mA
V/µs
V/µs
V
D
= 12 V
R
L
= 33
Ω
(dV/dt)c (2) (dI/dt)c = 7 A/ms
Table 5: Static Characteristics
Symbol
V
T
(2)
V
to
(2)
R
d
(2)
I
DRM
I
RRM
I
TM
= 22.5 A
Test Conditions
t
p
= 380 µs
T
j
= 25°C
T
j
= 125°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
MAX.
MAX.
MAX.
MAX.
Value
1.55
0.85
25
5
2
Unit
V
V
mΩ
µA
mA
Threshold voltage
Dynamic resistance
V
DRM
= V
RRM
Note 1:
minimum I
GT
is guaranted at 5% of I
GT
max.
Note 2:
for both polarities of A2 referenced to A1.
Table 6: Thermal resistance
Symbol
R
th(j-c)
Junction to case (AC)
S = 1 cm
²
Parameter
D
2
PAK / TO-220AB
TO-220AB Insulated
Junction to ambient
D
2
PAK
TO-220AB / TO-220AB Insulated
Value
1.2
2.1
45
60
°C/W
Unit
°C/W
R
th(j-a)
S = Copper surface under tab.
3/9
BTA16, BTB16 and T16 Series
Figure 1: Maximum power dissipation versus
RMS on-state current (full cycle)
P(W)
20
18
16
14
12
10
8
6
4
2
0
0
2
4
6
8
10
12
14
16
8
6
4
18
16
14
BTA
BTB / T16
Figure 2: RMS on-state current versus case
temperature (full cycle)
I
T(RMS)
(A)
12
10
I
T(RMS)
(A)
2
0
0
25
50
T
C
(°C)
75
100
125
Figure 3: RMS on-state current versus ambient
temperature (printed circuit board FR4, copper
thickness: 35µm) (full cycle)
I
T(RMS)
(A)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25
50
D
2
PAK
(S=1cm
2
)
Figure 4: Relative variation of thermal
impedance versus pulse duration
K=[Z
th
/R
th
]
1E+0
Z
th(j-c)
Z
th(j-a)
1E-1
T
C
(°C)
75
100
125
1E-2
1E-3
1E-2
1E-1
t
p
(s)
1E+0
1E+1
1E+2
5E+2
Figure 5: On-state characteristics (maximum
values)
I
TM
(A)
200
100
T
j
max.
V
to
= 0.85V
R
d
= 25 m
Ω
Figure 6: Surge peak on-state current versus
number of cycles
I
TSM
(A)
180
160
140
t=20ms
T
j
= T
j
max.
120
100
T
j
= 25°C.
Non repetitive
T
j
initial=25°C
One cycle
10
80
60
40
Repetitive
T
C
=85°C
V
TM
(V)
1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
20
0
1
10
Number of cycles
100
1000
4/9
BTA16, BTB16 and T16 Series
Figure 7: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width t
p
< 10 ms
and corresponding value of I
2
t
I
TSM
(A), I
2
t (A
2
s)
3000
T
j
initial=25°C
dI/dt limitation:
50A/µs
Figure 8: Relative variation of gate trigger
current, holding current and latching current
versus junction temperature (typical values)
I
GT
,I
H
,I
L
[T
j
] / I
GT
,I
H
,I
L
[T
j
=25°C]
2.5
2.0
I
GT
I
TSM
1000
1.5
I
H
& I
L
1.0
I
2
t
0.5
t
p
(ms)
100
0.01
0.10
1.00
10.00
T
j
(°C)
0.0
-40
-20
0
20
40
60
80
100
120
140
Figure 9: Relative variation of critical rate of
decrease of main current versus (dV/dt)c
(typical values) (Snubberless & Logic level
types)
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.0
1.8
1.6
B
C
SW
Figure 10: Relative variation of critical rate of
decrease of main current versus (dV/dt)c
(typical values) (Standard types)
(dI/dt)c [T
j
] / (dI/dt)c [T
j
specified]
6
5
4
3
2
1
1.4
1.2
1.0
0.8
0.6
T1635/CW/BW
(dV/dt)c (V/µs)
0.4
0.1
1.0
10.0
100.0
0
0
25
50
T
j
(°C)
75
100
125
Figure 11: D
2
PAK Thermal resistance junction to
ambient versus copper surface under tab (printed
circuit board FR4, copper thickness: 35 µm)
R
th(j-a)
(°C/W)
80
70
60
50
D
2
PAK
40
30
20
10
S(cm²)
0
0
4
8
12
16
20
24
28
32
36
40
5/9
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