BTW 68 (N)
SCR
.
.
.
.
FEATURES
HIGH SURGE CAPABILITY
HIGH ON-STATE CURRENT
HIGH STABILITY AND RELIABILITY
BTW 68 Serie :
INSULATED VOLTAGE = 2500V
(RMS)
(UL RECOGNIZED : E81734)
DESCRIPTION
The BTW 68 (N) Family of Silicon Controlled Recti-
fiers uses a high performance glass passivated
technology.
This general purpose Family of Silicon Controlled
Rectifiers is designed for power supplies up to
400Hz on resistive or inductive load.
ABSOLUTE RATINGS
(limiting values)
Symbol
IT(RMS)
IT(AV)
ITSM
RMS on-state current
(180° conduction angle)
Average
on-state
current
(180°
conduction angle,single phase circuit)
Non repetitive surge peak on-state current
( Tj initial = 25°C )
I2 t value
Critical rate of rise of on-state current
Gate supply : IG = 100 mA diG/dt = 1 A/µs
Storage and operating junction temperature range
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
Parameter
BTW 68
BTW 68 N
BTW 68
BTW 68 N
Tc=80°C
Tc=85°C
Tc=80°C
Tc=85°C
tp=8.3 ms
tp=10 ms
I2t
dI/dt
Tstg
Tj
Tl
tp=10 ms
Value
30
35
19
22
420
400
800
100
- 40 to + 150
- 40 to + 125
230
A2s
A/µs
°C
°C
°C
Unit
A
A
A
K
A
G
TOP 3
(Plastic)
Symbol
Parameter
BTW 68
200
400
400
BTW 68 / BTW 68 N
600
600
800
800
1000
1000
1200
1200
Unit
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125
°C
200
V
March 1995
1/5
BTW 68 (N)
THERMAL RESISTANCES
Symbol
Rth (j-a)
Junction to ambient
BTW 68
BTW 68 N
Parameter
Value
50
1.1
0.8
Unit
°C/W
°C/W
Rth (j-c) DC Junction to case for DC
GATE CHARACTERISTICS
(maximum values)
PG (AV) = 1W
PGM = 40W (tp = 20
µs)
IFGM = 8A (tp = 20
µs)
VRGM = 5 V.
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Value
BTW 68
IGT
VGT
VGD
tgt
VD =12V
VD =12V
(DC) R L=33Ω
(DC) R L=33Ω
Tj=25°C
Tj=25°C
Tj= 125°C
Tj=25°C
MAX
MAX
MIN
TYP
50
1.5
0.2
2
BTW 68 N
mA
V
V
µs
mA
mA
2.2
0.02
6
MIN
500
250
100
V/µs
V
mA
Unit
VD =VDRM RL=3.3kΩ
VD =VDRM IG = 200mA
dIG/dt = 1.5A/µs
IG= 1.2 IGT
IT= 500mA
gate open
tp= 380µs
IL
IH
VTM
IDRM
IRRM
dV/dt
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj= 125°C
VDRM
≤
800V
VDRM
≥
1000V
Tj= 125°C
TYP
MAX
MAX
MAX
2.1
40
75
BTW 68
ITM= 60A
BTW 68 N ITM= 70A
VDRM
VRRM
Rated
Rated
Linear slope up to
VD =67%VDRM
gate open
tq
VD =67%VDRM ITM= 60A VR= 75V
dITM/dt=30 A/µs
dVD /dt= 20V/µs
Tj= 125°C
TYP
µs
2/5
BTW 68 (N)
Package
BTW 68
(Insulated)
IT(RMS)
A
30
VDRM / VRRM
V
200
400
600
800
1000
1200
BTW 68 N
(Uninsulated)
35
600
800
1000
1200
Sensitivity Specification
BTW
X
X
X
X
X
X
X
X
X
X
Fig.1 :
Maximum average power dissipation versus
average on-state current (BTW 68).
Fig.2 :
Correlation between maximum average power
dissipation and maximum allowable temperatures (Tamb
and T case) for different thermal resistances heatsink +
contact (BTW 68).
Fig.3 :
Maximum average power dissipation versus
average on-state current (BTW 68 N).
Fig.4 :
Correlation between maximum average power
dissipation and maximum allowable temperatures (Tamb
and T case) for different thermal resistances heatsink +
contact (BTW 68 N).
3/5
BTW 68 (N)
Fig.5 :
Average on-state
temperature (BTW 68).
current
versus
case
Fig.6 :
Average on-state
temperature (BTW 68 N).
current
versus
case
Fig.7 :
Relative variation of thermal impedance versus
pulse duration.
Fig.8 :
Relative variation of gate trigger current versus
junction temperature.
Zth/Rth
1.00
Zth( j-c)
0.10
Zt h( j-a)
0.01
tp( s)
1E-3
1E-2
1E-1
1E +0
1 E+1
1 E+2
1 E +3
Fig.9 :
Non repetitive surge peak on-state current
versus number of cycles.
Fig.10 :
Non repetitive surge peak on-state current for a
sinusoidal pulse with width : t
≤
10 ms, and
corresponding value of I2 t.
4/5
BTW 68 (N)
Fig11 :
On-state characteristics (maximum values).
PACKAGE MECHANICAL DATA
TOP 3 Plastic
REF.
A
R 4.6
I
J
H
DIMENSIONS
Millimeters
Min.
Max.
15.50
21.10
15.60
16.50
-
4.60
4.17
1.55
0.70
2.90
5.65
1.40
Inches
Min.
0.594
0.814
0.561
0.632
0.133
0.173
0.161
0.057
0.019
0.106
0.212
0.047
Max.
0.611
0.831
0.615
0.650
-
0.182
0.164
0.062
0.028
0.115
0.223
0.056
A
B
C
15.10
20.70
14.30
16.10
3.40
4.40
4.08
1.45
0.50
2.70
5.40
1.20
G
B
D
D
G
H
I
J
P
L
M
C
L
M
N
P
N
N
Cooling method : C
Marking : type number
Weight : 4.7 g
Recommended torque value : 0.8 m.N.
Maximum torque value : 1 m.N.
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-T HOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
©
1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Nether-
lands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
5/5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
