BYY57 / BYY58
35A Silicon Power Rectifier Diode
Part no.
Description
The BYY57/58 are hermetically sealed 35A-
diodes, which are available in different reverse
voltage classes up to 1500V.
The diodes can be delivered with limited forward
voltage
and reverse current differences for
parallel connecting in rectifier stacks and back-
off-diodes
Features
•
•
•
•
Applications
•
•
•
•
Forward current 35A
Reverse voltage 75V – 1500V
Hermetic press-fit package
Available in different modifications of the
package
Power supplies
Rectifier diode in car generators
Rectifier bridges/stacks
Back-off-diodes
Pinout details
Typical application circuit
Six pulse
bridge
connection
~
~
~
1
3 x BYY57-1200
3 x BYY58-1200
2
BYY57: 1 – cathode; 2 - anode
BYY58: 1 – anode; 2 - cathode
+
-
Ordering information
Device
BYY57-75; …; BYY57-1500
BYY58-75; …; BYY58-1500
Quantity per box
500
500
Options
The package quantities for the different package
modifications are included in
“PressFitPackageModifications.pdf”
Device marking
Devices are identified by type. Colour of marking: BYY57- black, BYY58 – red
422........................................……. date code 422 = 2004 week 22
ZETEX
BYY57………………………………... diode type
400………………………………….. repetitive peak reverse voltage V
RRM
(in V) 400
Issue 4 – September 2006
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1
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BYY57 / BYY58
Absolute maximum ratings
(at T
amb
= 25°C unless otherwise stated)
Parameter
BYY57-75
BYY57-100
BYY57-150
BYY57-200
BYY57-300
BYY57-400
BYY57-500
Repetitive
peak
reverse
voltage
BYY57-600
BYY57-700
BYY57-800
BYY57-900
BYY57-1000
BYY57-1100
BYY57-1200
BYY57-1300
BYY57-1400
BYY57-1500
BYY58-75
BYY58-100
BYY58-150
BYY58-200
BYY58-300
BYY58-400
BYY58-500
BYY58-600
BYY58-700
BYY58-800
BYY58-900
BYY58-1000
BYY58-1100
BYY58-1200
BYY58-1300
BYY58-1400
BYY58-1500
I
FAV
I
FSM
500
1800
Maximum rated value
∫i²dt
1250
Repetitive peak forward current
Effective forward current
Junction temperature
Storage temperature range
I
FRM
=π*I
FAV
I
FRMS
T
Jmax
T
stg
110
55
200
- 50 to + 175
A
A
°C
°C
A²s
V
RRM
Symbol
75
100
150
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
35
600
Surge forward current
A
A
half-sine wave,
≤
10 ms
T
J
= 175°C half-sine
wave,
≤
10 ms
half-sine wave,
≤
10 ms
T
J
= 175°C half-sine
wave,
≤
10 ms
f = >15 Hz
V
T
c
= 150°C
Unit
Test condition
Forward current, arithmetic value
Issue 4 – September 2006
© Zetex Semiconductors plc 2006
2
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BYY57 / BYY58
Thermal resistance
Parameter
Junction to case
Symbol
R
θJC
Value
1.0
Unit
°C/W
Thermal characteristics
40
35
30
25
20
15
10
5
0
-50
0
50
100
T
C
(°C)
150
168°C
I
F
(A)
200°C
200
250
Forward current derating diagram
Electrical characteristics
(at T
amb
= 25°C unless otherwise stated)
40
35
30
25
20
15
10
5
0
0,75
I
F
(A)
0,8
0,85
0,9
V
F
(V)
0,95
1
1,05
Forward voltage characteristic
Electrical characteristics
(at T
amb
= 25°C unless otherwise stated)
Issue 4 – September 2006
© Zetex Semiconductors plc 2006
3
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BYY57 / BYY58
Parameter
BYY57-75...1200
BYY58-75...1200
Forward
voltage
BYY57-1300...1500
BYY58-1300...1500
BYY57-75...1200
BYY58-75...1200
Forward
BYY57-1300...1500
voltage
BYY58-1300...1500
(information
BYY57-75...1200
values)
BYY58-75...1200
BYY57-1300...1500
BYY58-1300...1500
BYY57-75...150
BYY58-75...150
BYY57-200...1500
Reverse
BYY58-200...1500
current
BYY57-75...400
BYY58-75...400
BYY57-500...1500
BYY58-500...1500
Threshold voltage (information
value)
Slope resistance (information
value)
Symbol
V
F
Min.
-
-
-
Typ.
1.0
1.03
0.82
0.85
-
-
-
-
-
-
0.66
5.75
Max.
1.1
Unit
V
Test contitions
I
F
= 35 A,
measuring time
10ms (half-sine
wave)
I
F
= 20 A,
measuring time
10ms (half-sine
wave),T
J
= 150°C
I
F
= 50 A
1.15
-
V
-
1.2
V
1.25
3
mA
1.5
0.25
mA
V
F
-
-
V
F
-
-
I
RRM
-
-
I
RRM
-
V
(FO)
r
F
-
-
0.1
-
-
T
J
= 150°C, at
V
RRM
at V
RRM
V
mΩ
T
J
= 175°C
T
J
= 175°C
Options: Electrical characteristics for parallel connecting
(at T
amb
= 25°C unless otherwise stated)
Option
1
Parameter
Forward voltage
difference in one
category of forward
voltage
Reverse current in one
category of forward
voltage (only for
BYY57-300…1500 and
BYY58-300…1500)
Symbol
∆V
F
Min.
-
Typ.
-
Max.
0.05
Unit
V
Test contitions
I
F
= 35 A, measuring
time 10ms (half-sine
wave)
at V
RRM
2
I
R
-
-
0.01
mA
Packaging details
Issue 4 – September 2006
© Zetex Semiconductors plc 2006
4
www.zetex.com
BYY57 / BYY58
Package dimensions
Dimensions in millimeters are control dimensions, dimensions in inches are approximate
DIM
A
A1
A2
b
D
D1
D2
L
Europe
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
MIN
15,00
5,90
2,10
3,10
15,50
12,75
12,30
3,00
Millimeters
TYP
15,50
6,10
2,30
3,40
15,70
12,80
12,50
3,50
MAX
16,00
6,30
2,50
3,70
15,90
12,85
12,70
4,00
Asia Pacific
MIN
0,591
0,232
0,083
0,122
0,610
0,502
0,484
0,118
Inches
TYP
0,610
0,240
0,091
0,134
0,618
0,504
0,492
0,138
Corporate Headquarters
MAX
0,630
0,248
0,098
0,146
0,626
0,506
0,500
0,157
Americas
Zetex Inc
700 Veterans Memorial Highway
Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Zetex (Asia Ltd)
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Zetex Semiconductors plc
Zetex Technology Park, Chadderton
Oldham, OL9 9LL
United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
For international sales offices visit
www.zetex.com/offices
Zetex products are distributed worldwide. For details, see
www.zetex.com/salesnetwork
This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
Issue 4 – September 2006
© Zetex Semiconductors plc 2006
5
www.zetex.com
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