BYY57A / BYY58A
50A Silicon Power Rectifier Diode
Part no.
Description
The BYY57A/58A are hermetically sealed 50A-
diodes, which are available in different reverse
voltage classes up to 800V.
The diodes can be delivered with limited forward
voltage
and reverse current differences for
parallel connecting in rectifier stacks and back-
off-diodes
Features
•
•
•
•
Applications
•
•
•
•
Forward current 50A
Reverse voltage 75V – 800V
Hermetic press-fit package
Available in different modifications of the
package
Power supplies
Rectifier diode in car generators
Rectifier bridges/stacks
Back-off-diodes
Pinout details
Typical application circuit
Six pulse
bridge
connection
~
~
~
1
3 x BYY57A-700
3 x BYY58A-700
2
BYY57A: 1 – cathode; 2 - anode
BYY58A: 1 – anode; 2 - cathode
+
-
Ordering information
Device
BYY57A-75; …; BYY57A-800
BYY58A-75; …; BYY58A-800
Quantity per box
500
500
Options
The package quantities for the different package
modifications are included in
“PressFitPackageModifications.pdf”
Device marking
Devices are identified by type. Colour of marking: BYY57A- black, BYY58A – red
422........................................……. date code 422 = 2004 week 22
ZETEX
BYY57...……………………………... diode type
A400 ……………………………….. 50A diode / repetitive peak reverse voltage V
RRM
(in V) 400
Issue 2 – November 2006
© Zetex Semiconductors plc 2006
1
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BYY57A / BYY58A
Absolute maximum ratings
(at T
amb
= 25°C unless otherwise stated)
Parameter
BYY57A-75
BYY57A-100
BYY57A-150
BYY57A-200
Repetitive
peak
reverse
voltage
BYY57A-300
BYY57A-400
BYY57A-500
BYY57A-600
BYY57A-700
BYY57A-800
BYY58A-75
BYY58A-100
BYY58A-150
BYY58A-200
BYY58A-300
BYY58A-400
BYY58A-500
BYY58A-600
BYY58A-700
BYY58A-800
I
FAV
I
FSM
800
4050
Maximum rated value
∫i²dt
3200
Repetitive peak forward current
Effective forward current
Junction temperature
Storage temperature range
I
FRM
=π*I
FAV
I
FRMS
T
Jmax
T
stg
157
78
200
- 50 to + 175
A
A
°C
°C
A²s
V
RRM
Symbol
75
100
150
200
300
400
500
600
700
800
50
900
Surge forward current
A
A
half-sine wave,
≤
10 ms
T
J
= 175°C half-sine
wave,
≤
10 ms
half-sine wave,
≤
10 ms
T
J
= 175°C half-sine
wave,
≤
10 ms
f = >15 Hz
V
T
c
= 150°C
Unit
Test condition
Forward current, arithmetic value
Issue 2 – November 2006
© Zetex Semiconductors plc 2006
2
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BYY57A / BYY58A
Thermal resistance
Parameter
Junction to case
Symbol
R
θJC
Value
0.8
Unit
°C/W
Thermal characteristics
60
50
40
30
20
10
0
-50
0
50
100
T
C
(°C)
150
164°C
I
F
(A)
200°C
200
250
Forward current derating diagram
Electrical characteristics
(at T
amb
= 25°C unless otherwise stated)
55
50
45
40
35
30
25
20
15
10
5
0
0,75
I
F
(A)
0,8
0,85
0,9
0,95
1
1,05
V
F
(V)
Forward voltage characteristic
Issue 2 – November 2006
© Zetex Semiconductors plc 2006
3
www.zetex.com
BYY57A / BYY58A
Electrical characteristics
(at T
amb
= 25°C unless otherwise stated)
Parameter
Forward
voltage
BYY57A-75...800
BYY58A-75...800
Symbol
V
F
Min.
-
Typ.
1.05
Max.
1.15
Unit
V
Test contitions
I
F
= 50 A,
measuring time
10ms (half-sine
wave)
I
F
= 20 A,
measuring time
10ms (half-sine
wave),T
J
= 150°
I
F
= 75 A
Forward
voltage
(information
values)
BYY57A-75...800
BYY58A-75...800
BYY57A-75...150
BYY58A-75...150
BYY57A-200...800
Reverse
BYY58A-200...800
current
BYY57A-75...400
BYY58A-75...400
BYY57A-500...800
BYY58A-500...800
Threshold voltage (information
value)
Slope resistance (information
value)
BYY57A-75...800
BYY58A-75...800
V
F
-
0.810
-
V
V
F
-
-
1.2
V
-
I
RRM
-
-
I
RRM
-
V
(FO)
r
F
-
-
-
-
-
-
0.66
4.5
3
mA
1.5
0.25
mA
0.1
-
-
V
mΩ
T
J
= 150°C, at
V
RRM
at V
RRM
T
J
= 175°C
T
J
= 175°C
Options: Electrical characteristics for parallel connecting
(at T
amb
= 25°C unless otherwise stated)
Option
1
Parameter
Forward voltage
difference in one
category of forward
voltage
Reverse current in one
category of forward
voltage (only for
BYY57A-300…800 and
BYY58A-300…800)
Symbol
∆V
F
Min.
-
Typ.
-
Max.
0.05
Unit
V
Test contitions
I
F
= 50 A, measuring
time 10ms (half-sine
wave)
at V
RRM
2
I
R
-
-
0.01
mA
Issue 2 – November 2006
© Zetex Semiconductors plc 2006
4
www.zetex.com
BYY57A / BYY58A
Packaging details
Package dimensions
Dimensions in millimeters are control dimensions, dimensions in inches are approximate
DIM
A
A1
A2
b
D
D1
D2
L
Europe
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
MIN
15,00
5,90
2,10
3,50
15,50
12,75
12,30
3,00
Millimeters
TYP
15,50
6,10
2,30
3,80
15,70
12,80
12,50
3,50
MAX
16,00
6,30
2,50
4,10
15,90
12,85
12,70
4,00
Asia Pacific
MIN
0,591
0,232
0,083
0,138
0,610
0,502
0,484
0,118
Inches
TYP
0,610
0,240
0,091
0,150
0,618
0,504
0,492
0,138
Corporate Headquarters
MAX
0,630
0,248
0,098
0,161
0,626
0,506
0,500
0,157
Americas
Zetex Inc
700 Veterans Memorial Highway
Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Zetex (Asia Ltd)
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Zetex Semiconductors plc
Zetex Technology Park, Chadderton
Oldham, OL9 9LL
United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
For international sales offices visit
www.zetex.com/offices
Zetex products are distributed worldwide. For details, see
www.zetex.com/salesnetwork
This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
Issue 2 – November 2006
© Zetex Semiconductors plc 2006
5
www.zetex.com
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