电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

BYG23M E2

产品描述Rectifiers 1 AMP, 1000V High Efficient
产品类别半导体    分立半导体   
文件大小373KB,共4页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
标准
下载文档 详细参数 全文预览

BYG23M E2概述

Rectifiers 1 AMP, 1000V High Efficient

BYG23M E2规格参数

参数名称属性值
Product AttributeAttribute Value
制造商
Manufacturer
Taiwan Semiconductor
产品种类
Product Category
Rectifiers
RoHSDetails
系列
Packaging
Reel
产品
Product
Rectifiers
工厂包装数量
Factory Pack Quantity
7500

文档预览

下载PDF文档
BYG23M
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Glass passivated junction chip.
- Ideal for automated placement
- Fast switching for high efficiency
- High surge current capability
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
- AEC-Q101 available
High Efficient Surface Mount Rectifiers
TYPICAL APPLICATION
The superior avalanche capability of BYG23M is specially
suited for free-wheeling, clamping, snubbering,
demagnetization in power supplies and other power switching applications.
DO-214AC (SMA)
MECHANICAL DATA
Case:
DO-214AC (SMA)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.064 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current (@T
A
=65°C)
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@1A
Maximum reverse current @ rated VR
T
J
=25°C
T
J
=100°C
T
J
=125°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
BYG23M
1000
700
1000
1.5
50
1.7
1
I
R
15
50
E
RSM
t
rr
C
J
R
θJA
T
J
T
STG
30
65
15
70
- 55 to +150
- 55 to +150
O
UNIT
V
V
V
A
A
V
μA
Pulse energy in avalanche mode, non repetitive
(Inductive load switch off ) T
A
=25℃, I
(BR)R
=1.23A
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse Test with PW=300μs, 1% Duty Cycle
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0Volts.
mJ
ns
pF
C/W
O
O
C
C
Document Number: DS_D1411087
Version: B14

技术资料推荐更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2231  2122  100  691  2140  10  34  47  14  12 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved