IG BT
TRENCHSTOP
TM
IGBT3 Chip
SIGC101T170R3E
Dat a She et
Indust rial Po wer C o ntrol
SIGC101T170R3E
Table of Contents
Features and Applications ............................................................................................................................... 3
Mechanical Parameters .................................................................................................................................... 3
Maximum Ratings ............................................................................................................................................. 4
Static and Electrical Characteristics .............................................................................................................. 4
Further Electrical Characteristics ................................................................................................................... 5
Chip Drawing ..................................................................................................................................................... 6
Revision History ............................................................................................................................................... 7
Relevant Application Notes ............................................................................................................................. 7
Legal Disclaimer ............................................................................................................................................... 8
L7777M, L7777T, L7777E
2
Rev. 2.4, 19.08.2015
SIGC101T170R3E
TRENCHSTOP
TM
IGBT3 Chip
Features:
1700V trench & field stop technology
Low turn-off losses
Short tail current
Positive temperature coefficient
Easy paralleling
Recommended for:
Power modules
Applications:
Drives
Chip Type
SIGC101T170R3E
Mechanical Parameters
Die size
Emitter pad size
Gate pad size
Area total
Thickness
Wafer size
V
CE
1700V
I
Cn
1
75A
Die Size
10.03mm x 10.03mm
Package
Sawn on foil
10.03 x 10.03
See chip drawing
mm
1.309 x 0.844
100.601
190
200
258
Photoimide
3200nm AlSiCu
Ni Ag – system
To achieve a reliable solder connection it is strongly
recommended not to consume the Ni layer completely during
production process
Electrically conductive epoxy glue and soft solder
Al, ≤500µm
0.65mm; max. 1.2mm
for original and
sealed MBB bags
Ambient atmosphere air, temperature 17°C – 25°C,
<6 months
Acc. to IEC62258-3: atmosphere >99% Nitrogen or inert gas,
humidity <25%RH, temperature 17°C – 25°C, <6 months
µm
mm
2
Maximum possible chips per wafer
Passivation frontside
Pad metal
Backside metal
Die bond
Wire bond
Reject ink dot size
Storage environment
for open MBB bags
1
Nominal collector current at
T
C
=100°C for chip packaged in power modules, see application example cited on page 5.
L7777M, L7777T, L7777E
3
Rev. 2.4, 19.08.2015
SIGC101T170R3E
Maximum Ratings
Parameter
Collector-emitter voltage,
T
vj
=25C
DC collector current, limited by
T
vj max
2
Pulsed collector current,
t
p
limited by
T
vj max
3
Gate-emitter voltage
Junction temperature range
Operating junction temperature
Short circuit data
3/
4
Symbol
V
CE
I
C
I
C,puls
V
GE
T
vj
T
vj
t
sc
Value
1700
-
225
20
-40 ... +175
-40 ... +150
10
Unit
V
A
A
V
°C
°C
µs
V
GE
=15V,
V
CC
=1000V,
T
vj
=150°C
3
Reverse bias safe operating area
(RBSOA)
I
C,max
=150A,
V
CE,max
=1700V,
T
vj
150°C
Static Characteristics
(tested on wafer),
T
vj
=25C
Parameter
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Integrated gate resistor
Symbol
V
(BR)CES
V
CEsat
V
GE(th)
I
CES
I
GES
r
G
Conditions
V
GE
=0V,
I
C
=3mA
V
GE
=15V,
I
C
=75A
I
C
=3mA,
V
GE
=V
CE
V
CE
=1700V,
V
GE
=0V
V
CE
=0V,
V
GE
=20V
Value
min.
1700
1.6
5.2
-
-
typ.
-
2
5.8
-
-
8.5
max.
-
2.4
6.4
4.33
600
µA
nA
V
Unit
Electrical Characteristics
3
Parameter
Collector-emitter saturation voltage
Input capacitance
Reverse transfer capacitance
Symbol
V
CEsat
C
ies
C
res
Conditions
V
GE
=15V,
I
C
=75A,
T
vj
=125C
V
CE
=25V,
V
GE
=0V,
f=1MHz
T
vj
=25C
Value
min.
-
-
-
typ.
2.4
6638
220
max.
-
-
pF
-
Unit
V
2
3
Depending on thermal properties of assembly.
Not subject to production test - verified by design/characterization.
4
Allowed number of short circuits: <1000; time between short circuits: >1s.
L7777M, L7777T, L7777E
4
Rev. 2.4, 19.08.2015
SIGC101T170R3E
Further Electrical Characteristics
Switching characteristics and thermal properties are depending strongly on module design and mounting
technology and can therefore not be specified for a bare die.
Application example
FS75R17KE3
Rev. 2.0
L7777M, L7777T, L7777E
5
Rev. 2.4, 19.08.2015
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