SMF5.0A - SMF100A
Taiwan Semiconductor
200W, 5V - 100V Surface Mount Transient Voltage Suppressor
FEATURES
●
●
●
●
●
●
Photo Glass passivated junction
Low power loss, high efficiency
Ideal for automated placement
Excellent clamping capability
Typical I
R
less than 1μA above 10V
200 watts peak pulse power capability with a 10 / 1000 μs
waveform (V
WM
≧
60V, P
PPM
= 175W)
● Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
V
WM
V
BR
(uni-directional)
P
PPM
T
J MAX
Package
Configuration
VALUE
5 - 100
6.8 - 117
200
175
UNIT
V
V
W
°C
SOD-123W
Single
APPLICATIONS
●
●
●
●
Switching mode power supply (SMPS)
Adapters
Lighting application
On-board DC/DC converter
MECHANICAL DATA
●
●
●
●
●
●
●
●
●
Case: SOD-123W
Molding compound meets UL 94V-0 flammability rating
Part no. with suffix “H” means AEC-Q101 qualified
Packing code with suffix "G" means green compound
(halogen-free)
Moisture sensitivity level: level 1, per J-STD-020
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 2 whisker test
Polarity: As marked
Weight: 16 mg (approximately)
SOD-123W
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Non-repetitive peak impulse power dissipation with
(1)
10/1000us waveform
(2)
Steady state power dissipation at T
L
=25°C
Forward Voltage @ I
F
=12A for Uni-directional only
Junction temperature
(3)
SYMBOL
P
PPM
P
tot
V
F
T
J
VALUE
200
1
3.5
-55 to +175
-55 to +175
UNIT
W
W
V
°C
°C
Storage temperature
T
STG
Notes:
1. Non-repetitive Current Pulse Per Fig. 3 and derated above TA=25°C Per Fig. 2
2. Units mounted on recommended PCB (5mm x 5mm Cu pad test board)
3. Pulse test with PW=0.3 ms
1
Version: B1709
SMF5.0A - SMF100A
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to-lead thermal resistance per diode
Junction-to-ambient thermal resistance per diode
Junction-to-case thermal resistance per diode
SYMBOL
R
ӨJL
R
ӨJA
R
ӨJC
LIMIT
33
100
34
UNIT
°C/W
°C/W
°C/W
Thermal Performance Note:
Units mounted on recommended PCB (5mm x 5mm Cu pad test board)
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
Breakdown
Part
number
Marking
code
voltage
V
BR
@I
T
(V)
(Note 1)
Min. Max.
6.4
7.0
6.67 7.37
7.22 7.98
7.78
8.6
8.33 9.21
8.89 9.83
9.44 10.5
10.0 11.1
11.1 12.3
12.2 13.5
13.3 14.7
14.4 15.9
15.6 17.2
16.7 18.5
17.8 19.7
18.9 20.9
20.0 22.1
22.2 24.5
24.4 26.9
26.7 29.5
28.9 31.9
31.1 34.4
33.3 36.8
36.7 40.6
40.0 44.2
44.4 49.1
47.8 52.8
50.0 55.3
53.3 58.9
56.7 62.7
60.0 66.3
64.4 71.2
66.7 73.7
71.1 78.6
77.8
86
83.3 92.1
86.7 95.8
94.4
104
100
111
111
123
Test
current
I
T
(mA)
10
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Working
stand-off
voltage
V
WM
(V)
5
6
6.5
7.0
7.5
8.0
8.5
9.0
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
43
45
48
51
54
58
60
64
70
75
78
85
90
100
Maximum
reverse leakage
current
I
R
@V
WM
(µA)
(Note 1)
800
800
500
200
100
50
10
5
5
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Maximum peak Maximum clamping
impulse current
I
PPM
(A)
tp =10/1000 μs
21.7
19.4
17.9
16.7
15.5
14.7
13.9
13.0
11.8
11.0
10.1
9.3
8.6
8.2
7.7
7.2
6.8
6.2
5.6
5.1
4.8
4.4
4.1
3.8
3.4
3.1
2.9
2.8
2.6
2.4
2.3
2.1
1.8
1.7
1.55
1.45
1.4
1.3
1.05
1.08
voltage
V
C
@I
PPM
(V)
tp =10/1000 μs
9.2
10.3
11.2
12.0
12.9
13.6
14.4
15.4
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
69.4
72.7
77.4
82.4
87.1
95
96.8
103
113
121
126
137
146
162
Uni.
SMF5.0A
SMF6.0A
SMF6.5A
SMF7.0A
SMF7.5A
SMF8.0A
SMF8.5A
SMF9.0A
SMF10A
SMF11A
SMF12A
SMF13A
SMF14A
SMF15A
SMF16A
SMF17A
SMF18A
SMF20A
SMF22A
SMF24A
SMF26A
SMF28A
SMF30A
SMF33A
SMF36A
SMF40A
SMF43A
SMF45A
SMF48A
SMF51A
SMF54A
SMF58A
SMF60A
SMF64A
SMF70A
SMF75A
SMF78A
SMF85A
SMF90A
SMF100A
Uni.
2W5P0
2W6P0
2W6P5
2W7P0
2W7P5
2W8P0
2W8P5
2W9P0
2W010
2W011
2W012
2W013
2W014
2W015
2W016
2W017
2W018
2W020
2W022
2W024
2W026
2W028
2W030
2W033
2W036
2W040
2W043
2W045
2W048
2W051
2W054
2W058
2W060
2W064
2W070
2W075
2W078
2W085
2W090
2W100
Note:
1.
Pulse test with PW=30 ms
2
Version: B1709
SMF5.0A - SMF100A
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.1 Pulse Power or Current vs. Initial Junction
Temperature
PEAK PULSE POWER (P
PPM
) OR CURRENT(I
PP
)
DERATING IN PERCENTAGE, %
100
Ptot - Total Power Dissipation (W)
1.5
Fig.2 Steady State Power Derating
75
1
50
0.5
25
0
0
25
50
75
100
125
150
175
0
0
Heat sink
5mm x 5mm
Cu pad test board
25
50
75
100
125
150
175
T
J
- INITAL TEMPERATURE (°C)
LEAD TEMPERATURE (
o
C)
Fig.3 Clamping Power Pulse Waveform
10000
140
I
PPM
, PEAK PULSE CURRENT (%)
120
100
80
60
40
20
td
0
0
0.5
1
1.5
t, TIME (ms)
2
2.5
3
10
1
Peak value
I
PPM
Pulse width(td) is defined
as the point where the peak
current decays to 50% of I
PPM
1000
CAPACITANCE (pF)
Fig.4 Typical Junction Capacitance
Rise time tr=10μs to 100% of I
PPM
Half value-I
PPM
/2
10/1000μs, waveform
as defined by R.E.A.
SMF6.0A
SMF12A
100
SMF22A
SMF26A
f=1.0MHz
Vsig=50mVp-p
10
SMF51A
100
V(
BR
), BREAKDOWN VOLTAGE (V)
4
Version: B1709
ARM技术
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