Z-Power LED X10490
Z-Power LED X10490
Technical Data Sheet
1
RoHS
Specification
SSC-SAW8KG0B
REV.01
September 2012
www.seoulsemicon.com
서식번호 : SSC-QP-7-07-18 (Rev.00)
Z-Power LED X10490
Technical Data Sheet
2
SAW8KG0B
Description
This surface-mount LED comes
in standard package dimension.
It has a substrate made up of a
molded plastic reflector sitting on
top of a bent lead frame. The die
is attached within the reflector
Cavity and the cavity is encapsulated
by silicone.
The package design coupled with careful
selection of component materials allow these
products to perform with high reliability.
SAW8KG0B
Features
사진
•
•
•
•
White colored SMT package.
Pb-free RefloW Soldering
Suitable for all SMT
Lead Free and RoHS
compliant
Applications
•
Interior lighting
•
General lighting
•
Indoor and out door
displays
•
Architectural /
Decorative lighting
REV.01
September 2012
www.seoulsemicon.com
서식번호 : SSC-QP-7-07-18 (Rev.00)
Z-Power LED X10490
Z-Power LED X10490
Technical Data Sheet
3
Contents
1.
2.
3.
4.
5.
6.
7.
8.
9.
Outline dimensions
Characteristics of SAW8KG0B LED
Characteristic diagrams
Color & Binning
Bin Code Description
Labeling
Packing
Recommended solder pad
Soldering
10. Precaution for use
11. Handling of Silicone Resin LEDs
REV.01
September 2012
www.seoulsemicon.com
서식번호 : SSC-QP-7-07-18 (Rev.00)
Z-Power LED X10490
Z-Power LED X10490
Technical Data Sheet
1. Outline dimensions
Top View
N.C
A
Bottom View
C
Cathode Mark
N.C
Slug : Anode
Side View
Circuit
Cathode
1
Anode
2
ESD Protection Device
[Note] Package Forward Current is 20mA
Notes :
[1] All dimensions are in millimeters.
[2] Scale : none
[3] Undefined tolerance is
±0.1mm
REV.01
September 2012
www.seoulsemicon.com
서식번호 : SSC-QP-7-07-18 (Rev.00)
Z-Power LED X10490
Z-Power LED X10490
Technical Data Sheet
5
2. Characteristics of SAW8KG0B
Electro-Optical characteristics
Parameter
Forward Voltage*
Reverse Voltage
Luminous Intensity*
[1]
(3700~7000K)
Luminous Intensity*
[1]
(2600~3700K)
Color Correlated
Temperature
Viewing Angle
[2]
(Ta=25℃)
Condition
I
F
=20mA
I
R
=10mA
I
F
=20mA
I
F
=20mA
I
F
=20mA
I
F
=20mA
I
F
=20mA
1.5kΩ;100
pF
Min.
20.7
0.7
-
10.9
2,600
-
80
5
-
Typ.
22
-
17.3
(53.6)
16.0
(49.6)
-
115
82
-
27
Max.
23
-
-
cd
(lm)
-
7,000
-
90
-
-
K
deg.
-
KV
Unit
V
V
Symbol
V
F
V
R
I
v
I
v
CCT
2
Θ
1/2
Ra
Color Rendering
Index*
ESD (HBM)
Thermal resistance
[3]
R
th
JS
I
F
=20mA
K/W
[1] The luminous intensity IV was measured at the peak of the spatial pattern which may not be aligned
with the mechanical axis of the LED package.
[2] 2
Θ
1/2
is the off-axis where the luminous intensity is 1/2 of the peak intensity.
[3] Thermal resistance: RthJS (Junction / solder)
* Tolerance : V
F
:±0.4V, I
V
:±7%, Ra :±2, x,y :±0.01
[Note] All measurements were made under the standardized environment of SSC.
Absolute Maximum Ratings
Parameter
Power Dissipation *
[1]
Forward Current
Operating Temperature
Storage Temperature
Junction Temperature
Symbol
P
d
I
F
T
opr
T
stg
T
j
Value
0.58
25
-30~+85
-40~+100
125
Unit
W
mA
℃
℃
℃
[1] Care is to be taken that power dissipation does not exceed the absolute maximum rating of the product.
* LED’s properties might be different from suggested values like above and below tables if operation condition
will be exceeded our parameter range.
REV.01
September 2012
www.seoulsemicon.com
서식번호 : SSC-QP-7-07-18 (Rev.00)
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