DISCRETE SEMICONDUCTORS
DATA SHEET
e
M3D379
M3D461
BLF0810-90; BLF0810S-90
Base station LDMOS transistors
Preliminary specification
2002 Mar 18
Philips Semiconductors
Preliminary specification
Base station LDMOS transistors
FEATURES
•
High power gain
•
Easy power control
•
Excellent ruggedness
•
Source on underside eliminates DC isolators, reducing
common mode inductance
•
Designed for broadband operation (750 MHz to 1 GHz).
APPLICATIONS
•
Common source class-AB operation in CDMA
applications in the 750 to 960 MHz frequency range.
BLF0810-90; BLF0810S-90
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistors encapsulated in a 2-lead flange package
(BLF0810-90) with a ceramic cap or in a 2-lead earless
package (BLF0810S-90). The common source is
connected to the flange.
Typical CDMA IS95 performance at standard settings at a
supply voltage of 27 V and I
DQ
= 500 mA
P
L
= 18 W
G
P
= 16 dB
η
= 26 %
ACPR <−45 dBc at 750 kHz and BW = 30 kHz
ACPR <−63 dBc at 1.98 MHz and BW = 30 kHz
PINNING - SOT502B
PINNING - SOT502A
PIN
1
2
3
drain
gate
source; connected to flange
DESCRIPTION
PIN
1
2
3
drain
gate
DESCRIPTION
source; connected to flange
handbook, halfpage
1
1
3
2
Top view
3
MBK394
2
Top view
MBL105
Fig.1 Simplified outline SOT502A (BLF0810-90)
Fig.2 Simplified outline SOT502B (BLF0810S-90)
QUICK REFERENCE DATA
2-tone performance at T
h
= 25
°C
in a common source test circuit.
MODE OF OPERATION
Class-AB
MODE OF OPERATION
CDMA
(1)
Note
1. IS95 CDMA (pilot, Paging, Sync, and Trafic Codes 8 trough 13)
2. ACPR 750 kHz at BW = 30 kHz
3. ACPR 1.98 MHz at BW = 30 kHz.
2002 Mar 18
2
f
(MHz)
881.4 - 881.6
f
(MHz)
881.5
V
DS
(V)
27
V
DS
(V)
27
P
L
PEP
(W)
60
P
L
avg
(W)
18
G
p
(dB)
typ. 16.5
G
p
(dB)
typ. 16
η
D
(%)
typ. 35
η
D
(%)
typ. 26
d
3
(dBc)
typ.
−30
ACPR
(dB)
typ.
−46
(2)
typ.
−63
(3)
Philips Semiconductors
Preliminary specification
Base station LDMOS transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
DS
V
GS
T
stg
T
j
PARAMETER
drain-source voltage
gate-source voltage
storage temperature
junction temperature
BLF0810-90; BLF0810S-90
CONDITIONS
−
−
MIN.
MAX.
75
±15
150
200
V
V
UNIT
−65
−
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
Note
1. Thermal resistance is determined under RF operating conditions.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)DSS
V
GSth
I
DSS
I
DSX
I
GSS
g
fs
R
DSon
PARAMETER
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
on-state drain current
gate leakage current
forward transconductance
drain-source on-state resistance
CONDITIONS
V
GS
= 0; I
D
= 3 mA
V
DS
= 10 V; I
D
= 300 mA
V
GS
= 0; V
DS
= 36 V
V
GS
= V
GS(th)
+ 9 V; V
DS
= 10 V
V
GS
=
±20
V; V
DS
= 0
V
DS
= 10 V; I
D
= 10 A
V
GS
= 9 V; I
D
= 10 A
MIN.
75
4
−
28
−
−
−
TYP.
−
−
−
−
−
4.8
120
MAX.
−
5
1
−
1
−
−
UNIT
V
V
µA
A
µA
S
mΩ
PARAMETER
CONDITIONS
VALUE
<0.75
UNIT
K/W
thermal resistance from junction to case T
h
= 25
°C,
P
L
= 18 W avg, note 1
2002 Mar 18
3
Philips Semiconductors
Preliminary specification
Base station LDMOS transistors
APPLICATION INFORMATION
RF performance in a common source-AB circuit; T
h
= 25
°C.
MODE OF OPERATION
Class-AB
MODE OF OPERATION
CDMA
(1)
Note
1. IS95 CDMA (pilot, Paging, Sync, and Trafic Codes 8 trough 13)
2. ACPR 750 kHz at BW = 30 kHz
3. ACPR 1.98 MHz at BW = 30 kHz.
Ruggedness in class-AB operation
f
(MHz)
881.4 - 881.6
f
(MHz)
881.5
V
DS
(V)
27
V
DS
(V)
27
I
DQ
(mA)
500
I
DQ
(mA)
500
BLF0810-90; BLF0810S-90
P
L
PEP
(W)
60
P
L
avg
(W)
>16
G
p
(dB)
>16
G
p
(dB)
>15
η
D
(%)
>35
η
D
(%)
>26
d
3
(dBc)
<−30
ACPR
(dB)
<−46
(2)
<−63
(3)
The BLF0810-90 and BLF0810S-90 are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1
through all phases at V
DS
= 27 V; P
L
= 60 W (PEP).
20
G
P
(dB)
16
G
P
50
η
D
(%)
40
0
d
3
(dBc)
-20
12
η
D
8
30
-40
20
-60
I
DQ
=400mA
450mA
500mA
600mA
4
10
0
0
20
40
60
0
80
100
P
L
(PEP) (W)
-80
0
20
40
60
80
100
P
L
(PEP) (W)
V
DS
= 27 V; I
DQ
= 500 mA; f
1
= 881.4 MHz; f
2
= 881.6 MHz.
V
DS
= 27 V; f
1
= 881.4 MHz; f
2
= 881.6 MHz.
Fig.3
Power gain and efficiency as functions of
peak envelope load power, typical values.
Fig.4
Intermodulation distortion as a function of
peak envelope load power, typical values.
2002 Mar 18
4
Philips Semiconductors
Preliminary specification
Base station LDMOS transistors
BLF0810-90; BLF0810S-90
0
d
5
(dBc)
-20
0
d
7
(dBc)
-20
I
DQ
=600mA
-40
400mA
450mA
500mA
-40
I
DQ
=600mA
500mA
-60
-60
450mA
400mA
-80
0
20
40
60
80
100
P
L
(PEP) (W)
-80
0
20
40
60
80
100
P
L
(PEP) (W)
V
DS
= 27 V; f
1
= 881.4 MHz; f
2
= 881.6 MHz.
V
DS
= 27 V; f
1
= 881.4 MHz; f
2
= 881.6 MHz.
Fig.5
Intermodulation distortion as a function of
peak envelope load power, typical values.
Fig.6
Intermodulation distortion as a function of
peak envelope load power, typical values.
20
G
P
(dB)
G
P
40
η
D
(%)
30
0
ACPR
(dB)
-20
15
η
D
10
20
-40
750 kHz
5
10
-60
1.98 MHz
0
20
30
40
50
P
L
avg (dBm)
0
-80
20
30
40
50
P
L
avg (dBm)
V
DS
= 27 V; I
DQ
= 500 mA; f = 881.5 MHz;
measured under CDMA conditions; test signal Standard IS-95
V
DS
= 27 V; I
DQ
= 500 mA; f = 881.5 MHz;
measured under CDMA conditions; test signal Standard IS-95
Fig.7
Power gain and efficiency as functions of
the average load power, typical values.
Fig.8
Intermodulation distortion as a function of
the average load power, typical values.
2002 Mar 18
5
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