Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
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Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
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- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
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-
© Nexperia B.V. (year). All rights reserved.
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DISCRETE SEMICONDUCTORS
DATA SHEET
MMBTA92
PNP high-voltage transistor
Product specification
Supersedes data of 2000 Apr 11
2004 Jan 16
Philips Semiconductors
Product specification
PNP high-voltage transistor
FEATURES
•
Low current (max. 100 mA)
•
High voltage (max. 300 V).
APPLICATIONS
•
Telephony
•
Professional communication equipment.
DESCRIPTION
PNP high-voltage transistor in a SOT23 plastic package.
NPN complement: MMBTA42.
PINNING
PIN
1
2
3
base
emitter
collector
MMBTA92
DESCRIPTION
handbook, halfpage
3
3
1
MARKING
2
TYPE NUMBER
MMBTA92
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
ORDERING INFORMATION
TYPE
NUMBER
MMBTA92
MARKING CODE
(1)
7E*
Top view
1
2
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
PACKAGE
NAME
−
DESCRIPTION
plastic surface mounted package; 3 leads
VERSION
SOT23
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
−300
−300
−5
−100
−200
−100
250
+150
150
+150
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT
2004 Jan 16
2
Philips Semiconductors
Product specification
PNP high-voltage transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
=
−200
V
I
C
= 0; V
EB
=
−3
V
V
CE
=
−10
V; note 1
I
C
=
−1
mA
I
C
=
−10
mA
I
C
=
−30
mA
V
CEsat
V
BEsat
C
c
f
T
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
transition frequency
I
C
=
−20
mA; I
B
=
−2
mA
I
C
=
−20
mA; I
B
=
−2
mA
I
E
= i
e
= 0; V
CB
=
−20
V;
f = 1 MHz
25
40
25
−
−
−
−
−
−
−
−
MIN.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
500
MMBTA92
UNIT
K/W
MAX.
−250
−100
UNIT
nA
nA
−500
−900
6
−
mV
mV
pF
MHz
I
C
=
−10
mA; V
CE
=
−20
V; 50
f = 100 MHz
2004 Jan 16
3
Philips Semiconductors
Product specification
PNP high-voltage transistor
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
MMBTA92
SOT23
D
B
E
A
X
HE
v
M
A
3
Q
A
A1
1
e1
e
bp
2
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A
1
max.
0.1
b
p
0.48
0.38
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
e
1.9
e
1
0.95
H
E
2.5
2.1
L
p
0.45
0.15
Q
0.55
0.45
v
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
TO-236AB
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
2004 Jan 16
4
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