NVMFD5C466N
Power MOSFET
40 V, 8.1 mW, 49 A, Dual N−Channel
Features
•
•
•
•
Small Footprint (5x6 mm) for Compact Design
Low R
DS(on)
to Minimize Conduction Losses
Low Q
G
and Capacitance to Minimize Driver Losses
NVMFD5C466NWF − Wettable Flank Option for Enhanced Optical
Inspection
•
AEC−Q101 Qualified and PPAP Capable
•
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJC
(Notes 1, 2, 3)
Power Dissipation
R
qJC
(Notes 1, 2)
Continuous Drain
Current R
qJA
(Notes 1, 2, 3)
Power Dissipation
R
qJA
(Notes 1 & 2)
Pulsed Drain Current
T
C
= 25°C
Steady
State
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
T
A
= 25°C
Steady
State
T
A
= 100°C
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C, t
p
= 10
ms
I
DM
T
J
, T
stg
I
S
E
AS
T
L
P
D
I
D
P
D
Symbol
V
DSS
V
GS
I
D
Value
40
±20
49
35
38
19
14
10
3.0
1.5
169
−55 to
+ 175
31
72
260
A
°C
A
mJ
°C
W
A
W
Unit
V
V
A
www.onsemi.com
V
(BR)DSS
40 V
R
DS(ON)
MAX
8.1 mW @ 10 V
I
D
MAX
49 A
Dual N−Channel
D1
D2
G1
S1
G2
S2
MARKING
DIAGRAM
D1 D1
1
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, I
L(pk)
= 3 A)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
DFN8 5x6
(SO8FL)
CASE 506BT
S1
G1
S2
G2
XXXXXX
AYWZZ
D2 D2
D1
D1
D2
D2
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
XXXXXX = 5C466N (NVMFD5C466N)
=
or 466NWF (NVMFD5C466NWF)
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
Symbol
R
qJC
R
qJA
Value
4
49
Unit
°C/W
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm
2
, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
©
Semiconductor Components Industries, LLC, 2017
1
October, 2017 − Rev. 1
Publication Order Number:
NVMFD5C466N/D
NVMFD5C466N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/
T
J
I
DSS
V
GS
= 0 V,
V
DS
= 40 V
T
J
= 25
°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
40
23
10
100
100
V
mV/°C
mA
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient
Drain−to−Source On Resistance
I
GSS
V
DS
= 0 V, V
GS
= 20 V
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
V
GS
= V
DS
, I
D
= 250
mA
2.5
−6.4
3.5
V
mV/°C
V
GS
= 10 V
I
D
= 15 A
6.75
8.1
mW
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
SWITCHING CHARACTERISTICS
(Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 15 A
T
J
= 25°C
T
J
= 125°C
0.9
0.7
24
V
GS
= 0 V, dIS/dt = 100 A/ms,
I
S
= 15 A
11
13
10
nC
ns
1.2
V
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 10 V, V
DS
= 32 V,
I
D
= 15 A, R
G
= 1.0
W
9.0
22
19
6.0
ns
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GP
V
GS
= 10 V, V
DS
= 32 V; I
D
= 15 A
V
GS
= 0 V, f = 1 MHz, V
DS
= 25 V
650
320
14
11
2.3
3.6
1.8
4.8
V
nC
pF
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
t
RR
t
a
t
b
Q
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
5. Switching characteristics are independent of operating junction temperatures.
www.onsemi.com
2
NVMFD5C466N
TYPICAL CHARACTERISTICS
200
180
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
160
140
120
100
80
60
40
20
0
0
0.5
1.0
1.5
2.0
2.5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
5V
4V
3.0
6V
7V
8V
50
40
30
20
T
J
= 25°C
10
T
J
= 125°C
0
0
1
2
3
T
J
= −55°C
4
5
6
60
V
DS
= 3 V
10 V
9V
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
40
35
30
25
20
15
10
5
0
4
5
6
7
8
9
10
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
= 15 A
T
J
= 25°C
Figure 2. Transfer Characteristics
10
9
8
7
6
5
4
3
0
10
20
30
40
50
60
70
80
90 100
I
D
, DRAIN CURRENT (A)
V
GS
= 10 V
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
1.9
1.7
1.5
1.3
1.1
0.9
0.7
−50 −25
1
0
25
50
75
100
125
150
175
I
D
= 15 A
V
GS
= 10 V
I
DSS
, LEAKAGE (nA)
100
1K
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
T
J
= 150°C
T
J
= 125°C
T
J
= 85°C
10
5
10
15
20
25
30
35
40
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
www.onsemi.com
3
NVMFD5C466N
TYPICAL CHARACTERISTICS
10K
10
9
8
7
6
5
4
3
2
1
0
0
2
4
6
8
10
12
Q
g
, TOTAL GATE CHARGE (nC)
V
DS
= 32 V
I
D
= 25 A
T
J
= 25°C
Q
gs
Q
gd
1K
C
iss
C
oss
100
10
T
J
= 25°C
V
GS
= 0 V
f = 1 MHz
0
5
10
15
20
25
30
35
C
rss
1
40
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
100
10
I
S
, SOURCE CURRENT (A)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
Figure 8. Gate−to−Source vs. Total Charge
V
GS
= 0 V
t
r
t, TIME (ns)
t
d(off)
t
d(on)
t
f
V
GS
= 10 V
V
DS
= 32 V
1
1
10
R
G
, GATE RESISTANCE (W)
10
T
J
= 125°C
1
0.1
0.4
0.5
0.6
T
J
= 25°C
0.7
0.8
T
J
= −55°C
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
T
C
= 25°C
V
GS
≤
10 V
Single Pulse
100
Figure 10. Diode Forward Voltage vs. Current
I
D
, DRAIN CURRENT (A)
100
10
10
10
ms
I
PEAK
(A)
T
J(initial)
= 25°C
T
J(initial)
= 100°C
1
1
0.1
0.1
1
R
DS(on)
Limit
Thermal Limit
Package Limit
10
0.5 ms
1 ms
10 ms
0.1
100
1000
1.0E−05
1.0E−04
1.0E−03
1.0E−02
TIME IN AVALANCHE (s)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
www.onsemi.com
4
NVMFD5C466N
TYPICAL CHARACTERISTICS
100
50% Duty Cycle
10
R(t) (°C/W)
20%
10%
5%
2%
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
PULSE TIME (sec)
0.1
1
10
100
1000
1
Figure 13. Thermal Response
DEVICE ORDERING INFORMATION
Device
NVMFD5C466NT1G
NVMFD5C466NWFT1G
Marking
5C466N
466NWF
Package
DFN8
(Pb−Free)
DFN8
(Pb−Free, Wettable Flanks)
Shipping
†
1500 / Tape & Reel
1500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
